DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
4.5A, 500V , RDS(ON) 1500mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 02-Dec-2010 Rev.A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen free
FEATURES
Low RDS(on) Technology. Low thermal impedance. Fast switching speed.
APPLICATIONS
Electronic ballast. Electronic transformer Switch mode power supply. ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage V GS ±20 V Continuous Drain Current 1 ID @TC=25℃ 4.5 A Pulsed Drain Current 2 IDM 18 A Continuous Source Current (Diode Conduction) 1 I S 4.5 A Total Power Dissipation 1 P D @TC=25℃ 74 W Operating Junction and Storage Temperature Range TJ, TSTG -55 ~ 175 °C THERMAL RESISTANCE RATINGS Maximum Thermal Resistance Junction-Ambient 1 R θJA 62.5 °C / W Maximum Thermal Resistance Junction-Case R θJC 1.7 °C / W Notes： 1 Package Limited. 2 Pulse width limited by maximum junction temperature. Gate Source Drain REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 7.90 8.10 N 0.75 0.95 B 9.45 9.65 O 0.66 0.86 C 9.87 10.47 P 13.50 14.50 D - 11.50 Q 2.44 3.44 E 1.06 1.46 R 3.50 3.70 F 2.60 3.00 S 1.15 1.45 G 6.30 6.70 T 4.30 4.70 H 8.35 8.75 U - 2.7 J1 . 6 0 T yp. V 1.89 3.09 K 1.10 1.30 W 0.40 0.60 L 1.17 1.37 X 2.60 3.60 M - 1.50 TO-220P Dimensions in millimeters IF M QQ U V B R T S PX K 2 31 C A D E G H J L N O W
4.5A, 500V , RDS(ON) 1500mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 02-Dec-2010 Rev.A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBO MIN. TYP. MAX. UNIT TEST CONDITIONS Static Gate-Threshold Voltage V GS(th) 2 - 4 V V DS= VGS, ID = 250 μA Gate-Body Leakage I GSS - - ±100 nA V DS = 0V, VGS= ±20V Zero Gate Voltage Drain Current I DSS - - 25 μA VDS= 500V, VGS= 0V - - 250 VDS= 400V, VGS= 0V, TJ=125°C On-State Drain Current 1 I D(on) 5 - - A V DS = 10V, VGS= 10V Drain-Source On-Resistance 1 R DS(ON) - - 1500 m Ω V GS= 10V, ID= 2.7 A Forward Transconductance 1 g fs - 2.5 - S V DS= 50V, ID= 2.7 A Diode Forward Voltage V SD - 1.6 - V I S= 4.5 A, VGS= 0 V Dynamic 2 Total Gate Charge Q g - 26 - nC VDS = 400 V VGS = 10 V ID = 3.1 A Gate-Source Charge Q gs - 4 - Gate-Drain Charge Q gd - 15 - Turn-on Delay Time T d(on) - 12.8 - nS VDD= 250 V ID= 3.1 A VGEN = 10 V RL= 79 RGEN = 12 Rise Time T r - 7.4 - Turn-off Delay Time T d(off) - 38 - Fall Time T f - 19.6 - Input Capacitance C ISS - 623 - pF VDS = 25 V VGS = 0 V f = 1MHz Output Capacitance C OSS - 112 - Reverse Transfer Capacitance C RSS - 24 - Notes 1 Pulse test ：Pulse width ≦ 300 μs, duty cycle ≦ 2 ％. 2 Guaranteed by design, not s ubject to production testing.
4.5A, 500V , RDS(ON) 1500mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 02-Dec-2010 Rev.A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE
4.5A, 500V , RDS(ON) 1500mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 02-Dec-2010 Rev.A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE