SSQ187N80SG SECOS | Alldatasheet
Document overview
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Technical content
187A, 80V , R DS(O/glyph1197) 3.9mΩ /glyph1197-Ch Enhancement Mode Power MOSFET 29-Jun-2017 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TO -220 187N80SG /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
The SSQ187N80SG is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent R DS(ON) and gate charge for most of the synchronous buck converter applications. The SSQ187N80SG meet the RoHS and Green Product with Function reliability approved.
FEATURES
/circle6 RDS(on) ≦3.9mΩ @V GS =10V /circle6 High speed power switching /circle6 Enhanced Body diode dv/dt capability /circle6 Enhanced Avalanche Ruggedness /circle6 100% UIS Tested, 100% Rg Tested /circle6 TO-220 Package MARKING ABSOLUTE MAXIMUM RATINGS (T J=25 °C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 80 V Gate-Source Voltage VGS ±20 V TC =25°C 187 Continuous Drain Current (Silicon Limited) TC =100°C 132 Continuous Drain Current (Package Limited) TC =25°C ID 120 A Pulsed Drain Current IDM 500 A Avalanche Energy, Single Pulse, @L=0.4mH TC =25°C E AS 720 mJ Power Dissipation T C =25°C P D 250 W Operating Junction and Storage Temperature Range TJ, T STG -55 ~ 175 °C Thermal Resistance Ratings Maximum Thermal Resistance Junction-Ambient R θJA 60 Maximum Thermal Resistance Junction-Case RθJC 0.6 °C / W Gate Source Drain Date Code A 9.96 10.36 H 2.54 BSC. B 14.7 16 I 2.04 2.92 C 2.74 BSC. J 3.745 REF. D 12.7 14.73 K 0.356 0.5 E 1.15 1.82 L 5.85 6.85 F 0.39 1.01 M 0.51 1.39 G 3.56 4.82
187A, 80V , R DS(O/glyph1197) 3.9mΩ /glyph1197-Ch Enhancement Mode Power MOSFET 29-Jun-2017 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T J=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test conditions Drain-Source Breakdown Voltage BV DSS 80 - - V V GS=0, I D =250µA Gate Threshold Voltage V GS(th) 2 3 4 V V DS=V GS , I D =250µA Forward Transfer conductance g fs - 70 - S V DS =5V, I D =20A Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±20V TJ=25°C - - 1 Drain-Source Leakage Current TJ=100°C IDSS - - 100 µA V DS =80V, V GS =0 Static Drain-Source On-Resistance RDS(ON) - 3.2 3.9 mΩ V GS =10V, I D =20A Total Gate Charge Q g - 64 - Gate-Source Charge Q gs - 24 - Gate-Drain (“Miller”) Change Q gd - 9 - nC ID =20A VDD =40V VGS =10V Turn-on Delay Time T d(on) - 19 - Rise Time Tr - 13 - Turn-off Delay Time T d(off) - 50 - Fall Time Tf - 9 - nS VDD =40V ID =20A VGS =10V RG =10Ω Input Capacitance C iss - 4820 - Output Capacitance C oss - 602 - Reverse Transfer Capacitance C rss - 28.5 - pF VGS =0 VDS=40V f=1.0MHz Source-Drain Diode Forward On Voltage V SD - 0.9 1.2 V I F=20A, V GS =0 Reverse Recovery Time T rr - 50 - nS Reverse Recovery Charge Q rr - 200 - nC VR=40V, I F=20A, dl/dt=400A/µs
187A, 80V , R DS(O/glyph1197) 3.9mΩ /glyph1197-Ch Enhancement Mode Power MOSFET 29-Jun-2017 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TYPICAL CHARACTERISTICS CURVE
187A, 80V , R DS(O/glyph1197) 3.9mΩ /glyph1197-Ch Enhancement Mode Power MOSFET 29-Jun-2017 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TYPICAL CHARACTERISTICS CURVE