SSQ04N60J SECOS | Alldatasheet
Document overview
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Technical content
4 A, 600 V , R DS(ON) 3 ΩΩ ΩΩ
N-Channel Enhancement Mode Power MOSFET 4-Nov-2015 Rev. A Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TO -220 J RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, converters, power motor control and bridge circuits.
FEATURES
/circle6 High Current Rating /circle6 Low R DS(ON) /circle6 Lower Capacitance /circle6 Lower Total Gate Charge /circle6 Tighter VSD Specifications /circle6 Avalanche Energy Specified ABSOLUTE MAXIMUM RATINGS (T A=25° C unless otherwise noted) Parameter Symbol Rating Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Continuous Drain Current ID 4 A Continuous Drain-Source Diode Forward Current IS 4 A Single Pulse Avalanche Energy 1 EAS 260 mJ Maximum Lead Temperature for Soldering Purposes@1/8’’ from case for 5 seconds TL 260 ° C Operating Junction and Storage Temperature Range TJ, T STG -55~150 ° C Thermal Resistance Rating Thermal Resistance from Junction to Ambient R θJA 62.5 ° C/W G S D A 10.010 10.350 I 4.980 5.180 B 3.735 3.935 J 3.560 3.960 C 2.590 2.890 K 4.470 4.670 D 12.060 12.460 L 1.200 1.400 E 1.170 1.370 M 8.500 8.900 F 0.710 0.910 N 2.520 2.820 G 13.400 13.800 Q 0.330 0.650 H 2.540 TYP.
N-Channel Enhancement Mode Power MOSFET 4-Nov-2015 Rev. A Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS
(T A=25° C unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Test condition Off Characteristics Drain-Source Breakdown Voltage BV DSS 600 - - V V GS =0, I D =250µA Drain-Source Diode Forward Voltage 2 V SD - - 1.5 V V GS =0, I S=4A Drain-Source Leakage Current I DSS - - 25 µA VDS =600V, V GS =0 Gate-Source Leakage Forward Current 2 I GSSF - - 100 nA VDS =0V, VGS =30V Gate-Source Leakage Reverse Current 2 I GSSR - - -100 nA VDS =0V, VGS = -30V On Characteristics 2 Gate Threshold Voltage V GS(th) 2 - 4 V V DS =V GS , I D =250 µA Static Drain-Source On-Resistance R DS(ON) - 2 3 Ω V GS =10V, I D =2A Forward Transconductance g fs 2 2.6 - S V DS =50V, I D =2A Dynamic Characteristics Input Capacitance C iss - 540 - Output Capacitance C oss - 125 - Reverse Transfer Capacitance C rss - 8 - pF VDS =25V VGS =0 f=1MHz Switching Characteristics Total Gate Charge Q g - 5 - Gate-Source Charge Q gs - 2.7 - Gate-Drain (“Miller”) Change Q gd - 2 - nC VDS =480V VGS =10V ID =4A Turn-on Delay Time T d(on) - 12 - Rise Time Tr - 7 - Turn-off Delay Time T d(off) - 19 - Fall Time Tf - 10 - nS VDD =300V VGS =10V R G =9.1 Ω ID =4A Notes: 1. E AS condition: L=30mH, I L=4A, V DD =100V, V GS =10V, R G =25 Ω, Starting T J=25° C. 2. Pulse Test : Pulse width 300≦ µs, duty cycle 2%.≦
N-Channel Enhancement Mode Power MOSFET 4-Nov-2015 Rev. A Page 3 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVE