SSPS920NE SECOS | Alldatasheet

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Technical content

7.1 A, 20 V , R DS(ON) 20 m ΩΩ ΩΩ

Dual-N Channel Mode Power MOSFET 28-Jun-2013 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low R DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management In portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

FEATURES

/circle6 Low R DS(on) provides higher efficiency and extends battery life. /circle6 Low thermal impedance copper leadframe SOP-8 saves board space. /circle6 Fast switching speed. /circle6 High performance trench technology.

PACKAGE INFORMATION

DFN3*3-8PP 3K 13’ inch MAXIMUM RATINGS (TA = 25 °C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V TA = 25° C 7.1 A Continuous Drain Current 1 TA = 70° C ID 5.8 A Pulsed Drain Current 2 IDM 40 A Continuous Source Current (Diode Conduction) 1 I S 2.1 A TA = 25° C 1.5 W Total Power Dissipation 1 TA = 70° C PD 1 W Operating Junction & Storage Temperature Range T J, T STG -55 ~ 150 ° C Thermal Resistance Ratings t≦10 sec 83 ° C / W Thermal Resistance Junction-ambient (Max.) 1 Steady State R θJA 120 ° C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. DFN3*3-8PP A 3.0 BSC. E 0.08 0.25 B 2.8 BSC. F 2.3 BSC C 0.20 0.35 G 0.7 0.9 D 0.65 BSC.

Dual-N Channel Mode Power MOSFET 28-Jun-2013 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T A = 25 °C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Gate Threshold Voltage V GS(th) 0.4 - - V V DS = V GS , I D =250 µA Gate-Body Leakage Current I GSS - - ±100 nA V DS =0, VGS = ±8V - - 1 µA V DS =16V, V GS =0 Zero Gate Voltage Drain Current I DSS - - 25 µA V DS =16V, V GS =0, T J= 55° C On-State Drain Current 1 I D(on) 10 - - A V DS = 5V, V GS =4.5V - - 20 VGS = 4.5V, I D =5.7A - - 24 VGS = 2.5V, I D =5.2A Drain-Source On-Resistance 1 R DS(ON) - - 39 m Ω VGS = 1.8V, I D = 4.8A Forward Transconductance 1 g fs - 15 - S V DS = 10V, I D =5.7A Diode Forward Voltage V SD - 0.71 - V I S=1.1A, V GS =0 Dynamic 2 Total Gate Charge Q g - 6 - Gate-Source Charge Q gs - 0.9 - Gate-Drain Charge Q gd - 2.5 - nC ID = 5.7A VDS = 10V VGS = 4.5V Input Capacitance C iss - 439 - Output Capacitance C oss - 78 - Reverse Transfer Capacitance C rss - 68 - pF VGS =0 VDS =15V f =1.0MHz Turn-On Delay Time T d(on) - 8 - Rise Time T r - 14 - Turn-Off Delay Time T d(off) - 42 - Fall Time T f - 17 - nS VDS = 10V ID = 5.7A VGEN = 4.5V R L= 1.8 Ω R GEN = 6 Ω Notes: 1. Pulse test ：PW ≦ 300 µs duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing.

Dual-N Channel Mode Power MOSFET 28-Jun-2013 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES

Dual-N Channel Mode Power MOSFET 28-Jun-2013 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES