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Technical content

6.2 A , 100 V , RDS(ON) 62 m

N-Ch Enhancement Mode Power MOSFET 11-Dec-2013 Rev. B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. B E F G g A e b θ D C d RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are

FEATURES

 Low R DS(on) provides higher efficiency and extends battery life  Low thermal impedance copper leadframe DFN3x3-8PP saves board space  Fast switching speed  High performance trench technology APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

PACKAGE INFORMATION

(TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ±20 V TA=25°C 6.2 A Continuous Drain Current 1 TA=70°C ID 4.6 A Pulsed Drain Current 2 I DM 50 A Continuous Source Current (Diode Conduction) 1 I S 5 A TA=25°C 3.5 W Total Power Dissipation 1 TA=70°C PD 2 W Operating Junction & Storage Temperature Range T J, TSTG -55~150 °C Thermal Resistance Ratings t ≦ 10 sec 35 °C / W Thermal Resistance Junction-Ambient (Max.) 1 Steady State RθJA 81 °C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. DFN3x3-8PP A 0.70 0.90 θ 0 ° 12 ° B 3.00BSC b 0.20 0.40 C 0.10 0.25 d 0.65BSC D 1.80 2.3 e 3.00BSC E3 . 2 B S C g 0.70 (TYP .) F 0.01 0.02 G 2.35BSC Top View

N-Ch Enhancement Mode Power MOSFET 11-Dec-2013 Rev. B Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Gate-Threshold Voltage V GS(th) 1 - - V V DS=VGS, ID=250μA Gate-Body Leakage Current I GSS - - ±10 μA V DS=0, VGS= ±20V - - 1 V DS=80V, VGS=0 Zero Gate Voltage Drain Current I DSS - - 5 μA VDS=80V, VGS=0, TJ=55°C On-State Drain Current 1 I D(on) 3.1 - - A V DS=5V, VGS=10V - - 62 V GS=10V, ID=5A Drain-Source On-Resistance 1 R DS(ON) - - 72 mΩ VGS=4.5V, ID=4.9A Forward Transconductance 1 g fs - 10 - S V DS=15V, ID=5A Diode Forward Voltage V SD - 0.73 - V I S=2.5A, VGS=0 Dynamic 2 Total Gate Charge Q g - 12 - Gate-Source Charge Q gs - 4.1 - Gate-Drain Charge Q gd - 6.2 - nC VDS=50V, VGS=4.5V, ID=5A Input Capacitance C iss - 1098 - Output Capacitance C oss - 120 - Reverse Transfer Capacitance C rss - 76 - pF VDS=15V, VGS=0 f=1MHz Turn-On Delay Time T d(on) - 7 - Rise Time T r - 11 - Turn-Off Delay Time T d(off) - 54 - Fall Time T f - 26 - nS VDD=50V ID=5A VGEN=10V RL=10Ω RGEN=6Ω Notes: 1. Pulse test ：PW ≦ 300 μs duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing.

N-Ch Enhancement Mode Power MOSFET 11-Dec-2013 Rev. B Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Typical Electrical Characteristics

N-Ch Enhancement Mode Power MOSFET 11-Dec-2013 Rev. B Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Typical Electrical Characteristics