SSPR42P03

SSPR42P03_15 SECOS | Alldatasheet

Document overview

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Technical content

-42A , -30V , R DS(ON) 15 m ΩΩ ΩΩ P-Channel Enhancement Mode Power MOSFET 20-May-2014 Rev.A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

The SSPR42P03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SPR-8PP package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

FEATURES

/circle6 Lower Gate Charge /circle6 Simple Drive Requirement /circle6 Fast Switching Characteristic MARKING

PACKAGE INFORMATION

(T A=25° C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V TC =25° C -42 Continuous Drain Current 1@V GS =10V TC =100° C ID -27 A Pulsed Drain Current 2 IDM -130 A Single Pulse Avalanche Energy 3 EAS 264 mJ Avalanche Current IAS -42 A Power Dissipation 4 T C =25° C P D 37 W Operating Junction & Storage Temperature T J, T STG -55~150 ° C Thermal Resistance Rating Thermal Resistance Junction-Ambient 1(Max). R θJA 75 ° C / W Thermal Resistance Junction-Case 1(Max). R θJC 3.38 ° C / W 42P03 /box4/box4/box4 /box4/box4/box4 /box4/box4/box4 /box4/box4/box4 /box4/box4 /box4/box4 /box4/box4 /box4/box4 = Date code SPR-8PP A 3.25 3.40 G 1.35 1.55 B 3.05 3.25 H 0.24 0.35 C 3.2 0 3.40 I 1.13 REF. D 3.00 3.20 J 0.30 0.50 E 0.65 BSC. K 0.10 0.20 F 2.40 2.60 L 0.70 0.90

-42A , -30V , R DS(ON) 15 m ΩΩ ΩΩ P-Channel Enhancement Mode Power MOSFET 20-May-2014 Rev.A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS

(T J = 25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BV DSS -30 - - V V GS =0, I D = -250uA Gate-Threshold Voltage V GS(th) -1 - -2.5 V V DS =V GS , I D = -250uA Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±20V - - -1 V DS = -24V, V GS =0, TJ=25° C Drain-Source Leakage Current I DSS - - -5 uA VDS = -24V, V GS =0, TJ=55° C - - 15 V GS = -10V, I D = -30A Static Drain-Source On-Resistance 2 R DS(ON) - - 25 m Ω VGS = -4.5V, I D = -15A Gate Resistance R g - 9 18 Ω f =1.0MHz Total Gate Charge Q g - 22 - Gate-Source Charge Q gs - 8.7 - Gate-Drain (“Miller”) Change Q gd - 7.2 - nC ID = -15A VDS = -15V VGS = -4.5V Turn-on Delay Time 2 T d(on) - 8 - Rise Time Tr - 73.7 - Turn-off Delay Time T d(off) - 61.8 - Fall Time Tf - 24.4 - nS VDD = -15V ID = -15A VGS = -10V R G =3.3 Ω Input Capacitance C iss - 2215 - Output Capacitance C oss - 310 - Reverse Transfer Capacitance C rss - 237 - pF VGS =0 VDS = -15V f =1.0MHz Guaranteed Avalanche Characteristics Single Pulse Avalanche Energy 5 EAS 66 - - mJ V DD = -25V, L=0.1mH, IAS = -21A Source-Drain Diode Diode Forward Voltage 2 V SD - - -1 V I S= -1A, V GS =0, TJ=25° C Continuous Source Current 1,6 I S - - -42 A Pulsed Source Current 2,6 I SM - - -130 A VD =V G =0, Force Current Reverse Recovery Time T rr - 19 - nS Reverse Recovery Charge Q rr - 9 - nC IF= -15A, dl/dt=100A/ µS, TJ=25° C Note: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper , ≦10sec , 125 ℃/W at steady state 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3. The EAS data shows Max. rating . The test condition is V DD = -25V,V GS = -10V,L=0.1mH,I AS = -42A 4. The power dissipation is limited by 150° C junction temperature 5. The Min. value is 100% EAS tested guarantee. 6. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

-42A , -30V , R DS(ON) 15 m ΩΩ ΩΩ P-Channel Enhancement Mode Power MOSFET 20-May-2014 Rev.A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES

-42A , -30V , R DS(ON) 15 m ΩΩ ΩΩ P-Channel Enhancement Mode Power MOSFET 20-May-2014 Rev.A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES