SSPR10N06-C SECOS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
10A, 60V , R DS(O/glyph1197) 45mΩ /glyph1197-Channel Enhancement Mode Power MOSFET 19-Oct-2018 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSPR10N06-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent R DS(ON) and gate charge for most of the synchronous buck converter applications. The SSPR10N06-C meet the RoHS and Green Product requirement with full function reliability approved.
FEATURES
/circle6 Advanced High Cell Density Trench Technology /circle6 Super Low Gate Charge /circle6 Green Device Available MARKING
PACKAGE INFORMATION
Parameter Symbol Ratings Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V TC =25°C 10 Continuous Drain Current 1 , @VGS =10V TC =100°C ID A Pulsed Drain Current 3 IDM 30 A Total Power Dissipation T C =25°C P D 10 W Operating Junction & Storage Temperature TJ, T STG -55~150 °C Thermal Resistance Ratings Thermal Resistance Junction-Ambient 1 75 Thermal Resistance Junction-Ambient 2 RθJA 135 Thermal Resistance Junction-Case 1 R θJC 12.5 °C/W Part Number Type SSPR10N06-C Lead (Pb)-free and Halogen-free SPR-8PP G S S S D D D D A 3.20 3.40 G 1.35 1.98 B 3.00 3.25 H 0.24 0.35 C 3.20 3.45 I 0.35TYP. D 3.00 3.20 J 0.60TYP. E 0.65 BSC. K 0.10 0.25 F 2.39 2.60 L 0.70 0.90
10 N06
/box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4 /box4/box4 = Date code
10A, 60V , R DS(O/glyph1197) 45mΩ /glyph1197-Channel Enhancement Mode Power MOSFET 19-Oct-2018 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T J=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BV DSS 60 - - V V GS =0, I D=250µA Gate Threshold Voltage V GS(th) 1 - 2.5 V V DS =VGS , I D=250µA Forward Transconductance g fs - 25.3 - S V DS =5V, I D=10A Gate-Source Leakage Current IGSS - - ±100 nA V GS = ±20V TJ=25°C - - 1 V DS =48V, V GS =0 Drain-Source Leakage Current T J=55°C IDSS - - 5 µA VDS =48V, V GS =0 - - 45 V GS =10V, I D=6A Static Drain-Source On-Resistance 4 RDS(ON) - - 55 mΩ VGS =4.5V, I D=5A Total Gate Charge Q g - 19 - Gate-Source Charge Q gs - 2.5 - Gate-Drain (“Miller”) Change Qgd - 5 - nC ID=10A VDS =48V VGS =10V Turn-on Delay Time T d(on) - 2.8 - Rise Time T r - 16.6 - Turn-off Delay Time T d(off) - 21.2 - Fall Time T f - 5.6 - nS VDD =30V ID=10A VGS =10V RG=3.3Ω Input Capacitance C iss - 1027 - Output Capacitance C oss - 65 - Reverse Transfer Capacitance Crss - 46 - pF VGS =0 VDS =15V f=1MHz Source-Drain Diode Continuous Source Current 1 I S - - 10 A Pulsed Source Current 3 I SM - - 30 A Diode Forward Voltage 4 V SD - - 1.2 V I S=1A, V GS =0 Reverse Recovery Time t rr - 12.2 - nS Reverse Recovery Charge Q rr - 7.3 - nC IF =10A, dI/dt=100A/µs TJ=25 °C Notes: 1. Surface mounted on 1”x1” FR-4 board with 2OZ copper. 2. When mounted on Min. Copper pad. 3. Pulse width limited by maximum junction temperature, pulse width ≦300µs, duty cycle ≦2%. 4. The data tested by pulsed, pulse width ≦300µs, duty cycle ≦2%.
10A, 60V , R DS(O/glyph1197) 45mΩ /glyph1197-Channel Enhancement Mode Power MOSFET 19-Oct-2018 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES
10A, 60V , R DS(O/glyph1197) 45mΩ /glyph1197-Channel Enhancement Mode Power MOSFET 19-Oct-2018 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES