SSPL2015 GOOD-ARK | Alldatasheet

Document overview

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Technical content

www.goodark.com Page 1 of 7 Rev.1.1 Main Product Characteristics Features and Benefits

Description

Parameter Max. Units I D @ T C = 25°C Continuous Drain Current, V GS @ 10V 18 I D @ T C = 100°C Continuous Drain Current, V GS @ 10V 13 I DM Pulsed Drain Current A Power Dissipation 150 W P D C = 25°C Linear Derating Factor 1.0 W/°C V DS Drain-Source Voltage 200 V V GS Gate-to-Source Voltage ± 30 V E AS Single Pulse Avalanche Energy @ L=4.2mH 412 mJ I AS Avalanche Current @ L=4.2mH 14 A T J T STG Operating Junction and Storage Temperature Range -55 to +175 °C V DSS 200V R DS (on) 0.13ohm(typ.) I D 18A Marking and Pin Assignment Schematic Diagram  Advanced Process T echnology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175 ℃ operating temperature  Lead free product These N-Channel enhancement mode power field effect transistors are produced using our proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. TO - 220

www.goodark.com Page 2 of 7 Rev.1.1 Thermal Resistance Symbol Characteristics Typ. Max. Units R θJC Junction-to-case — 1.0 °C/W Junction-to-ambient (t ≤ 10s) — 62 °C/W R θJA Junction-to-Ambient (PCB mounted, steady-state) °C/W

Electrical Characteristics

A =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source breakdown voltage 200 — — V V GS = 0V, I D = 250μA — 0.13 0.15 V GS =10V,I D =11A R DS(on) Static Drain-to-Source on-resistance — 0.27 — Ω T J = 125°C 2 — 4 V DS = V GS , I D = 250μA V GS(th) Gate threshold voltage — 2.26 — V T J = 125°C — — 1 V DS =200V,V GS = 0V I DSS Drain-to-Source leakage current — — 50 μA T J = 125°C 100 V GS =20V I GSS Gate-to-Source forward leakage -100 nA V GS = -20V Q g Total gate charge — 22.0 — Q gs Gate-to-Source charge — 6.6 — Q gd Gate-to-Drain("Miller") charge — 7.2 — nC I D = 18A, V DS =160V, V GS = 10V t d(on) Turn-on delay time — 11.0 — t r Rise time — 25.5 — t d(off) Turn-Off delay time — 21.9 — t f Fall time — 5.2 — nS V GS =10V, V DD =100V, R L =9.2Ω, R GEN =2.55Ω I D =11A C iss Input capacitance — 1038 — C oss Output capacitance — 232 — C rss Reverse transfer capacitance — 51 — pF V GS = 0V V DS = 25V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current (Body Diode) — — 18 A I SM Pulsed Source Current (Body Diode) — — 72 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — 0.89 1.3 V I S =11A, V GS =0V, T J = 25°C t rr Reverse Recovery Time — 136 — nS Q rr Reverse Recovery Charge — 900 — nC T J = 25°C, I F =11A, di/dt = 100A/μs

www.goodark.com Page 3 of 7 Rev.1.1 Test Circuits and Waveforms Switch Waveforms: Notes ①Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =175°C.

www.goodark.com Page 6 of 7 Rev.1.1 Mechanical Data Min Nom Max Min Nom Max e Q1 5 Q2 5 Q3 5 Q4 1 5.08BSC 0.2BSC Symbol Dimension In Millimeters Dimension In Inches 2.54BSC 0.1BSC 7.35REF 0.29REF TO-220 PACKAGE OUTLINE DIMENSION_GN

www.goodark.com Page 7 of 7 Rev.1.1 Ordering and Marking Information Device Marking: SSPL2015 Package (Available) TO-220 Operating Temperature Range C : -55 to175 ºC Devices per Unit Package Type Units/Tube Tubes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box TO-220 50 20 1000 6 6000 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) T j =125℃ to 175 ℃ @ 80% of Max V DSS CES /VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) T j =125℃ or 175 ℃ @ 100% of Max V GSS 168 hours 500 hours 1000 hours 3 lots x 77 devices