SSPF7490N SECOS | Alldatasheet
Document overview
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Technical content
8.3A, 150V , R DS(ON) 48 mΩΩ ΩΩ N-Ch Enhancement Mode Power MOSFET 11-May-2016 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. B E F G g A e b θ D C d RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
FEATURES
/circle6 Low R DS(on) trench technology /circle6 Low thermal impedance /circle6 Fast switching speed APPLICATION /circle6 Industrial D/C/DC conversion circuits /circle6 White LED boost converters /circle6 Automotive systems
PACKAGE INFORMATION
(TA=25° C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS ±20 V TA=25° C 8.3 A Continuous Drain Current 1 TA=70° C ID 6.7 A Pulsed Drain Current 2 IDM 50 A Continuous Source Current (Diode Conduction) 1 I S 7.1 A TA=25° C 5 W Power Dissipation 1 TA=70° C PD 3.2 W Operating Junction and Storage Temperature Range T J, T STG -55~150 ° C Thermal Resistance Ratings t≦10 sec 25 ° C / W Maximum Thermal Resistance from Junction to Ambient
1 Steady State
R θJA 65 ° C / W Notes: 1. The surface of the device is mounted on a 1” x 1” FR4 board. 2. The pulse width is limited by the maximum junction temperature. DFN5x6-8PP A 0.85 1 θ 0° 10 ° B 5.2 BSC b 0.3 0.5 C 0.15 0.25 d 1.27 BSC D 3.81 BSC e 5.55 BSC E 6.05 BSC g 1.2 TYP. F 0.25 BSC G 3.81 BSC
8.3A, 150V , R DS(ON) 48 mΩΩ ΩΩ N-Ch Enhancement Mode Power MOSFET 11-May-2016 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS
(T A=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Static 1 Gate-Source Threshold Voltage VGS(th) 1 - - V V DS =V GS , I D =250 µA Gate-Body Leakage Current I GSS - - ±100 nA V DS =0V, VGS = ±20V - - 1 V DS =120V, V GS =0 Zero Gate Voltage Drain Current IDSS - - 25 µA VDS =120V, V GS =0, T J=55° C On-State Drain Current I D(on) 15 - - A V DS =5V, V GS =10V - - 48 V GS =10V, I D =8.3A Drain-Source On-Resistance R DS(ON) - - 54 m Ω VGS =5.5V, I D =6.4A Forward Transconductance g fs - 15 - S V DS =15V, I D =8.3A Diode Forward Voltage V SD - 0.74 - V I S=3.6A, V GS =0 Dynamic 1 Total Gate Charge Q g - 58 - Gate-Source Charge Q gs - 17 - Gate-Drain Charge Q gd - 35 - nC VDS =75V VGS =5.5V ID =8.3A Input Capacitance C iss - 4388 - Output Capacitance C oss - 260 - Reverse Transfer Capacitance C rss - 239 - pF VDS =15V VGS =0 f=1MHz Turn-On Delay Time T d(on) - 20 - Rise Time T r - 35 - Turn-Off Delay Time T d(off) - 122 - Fall Time T f - 38 - nS VDS =75V VGEN =10V ID =8.3A R L=9.1 Ω R GEN =6Ω Notes: 1. Pulse test ：Pulse width ≦300 µs, duty cycle ≦2%.
8.3A, 150V , R DS(ON) 48 mΩΩ ΩΩ N-Ch Enhancement Mode Power MOSFET 11-May-2016 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE
8.3A, 150V , R DS(ON) 48 mΩΩ ΩΩ N-Ch Enhancement Mode Power MOSFET 11-May-2016 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE