SSP7464N

SSP7464N VBSEMI | Alldatasheet

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Technical content

N-Channel 60-V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 612 49-2-21 Available  TrenchFET ® Power MOSFET  100 % R g Tested  100 % UIS Tested

APPLICATIONS

 Battery Swit ch DC/DC Converter S N-Channel MOSFET G D Top View PIN1 DFN5X6 Top View Bottom View PRODUCT SUMMARY VDS (V) 60 RDS(on) max. () at VGS = 10 V 0.024 RDS(on) max. () at VGS = 4.5 V 0.028 Qg typ. (nC) 5.2 ID (A) 15a, g Configuration Single Notes a. Pac k age limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless ot herwise noted) PARAMETER SYMBOL LIMIT UNIT D rain-source voltage VDS 60 VGate-source voltage VGS ± 20 Continuous drain current (TJ = 150 °C) TC = 25 °C ID 15 a A TC = 70 °C 9 a TA = 25 °C 10.3 b, c TA = 70 °C 8.1 b, c Pulsed drain current (t = 100 μs) IDM 40 Continuous source-drain diode current TC = 25 °C IS 12 a TA = 25 °C 3 b, c Single pulse av alanche current L = 0.1 mH IAS 15 Single pulse av alanche energy EAS 11.3 mJ Maximum power dis sipation TC = 25 °C PD 35.7 WTC = 70 °C 22.9 TA = 25 °C 3.6 b, c TA = 70 °C 2.3 b, c Operating j unction and storage temperature range TJ, Tstg -55 to +150 °CSoldering r ecommendations (peak temperature) c 260 THERMAL RESISTANCE R ATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum junction-to-ambient b t  10 s R thJA 25 35 °C/WMaximum junctio n-to-case (drain) Steady state R thJC 2.7 3.5 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSP7464N A ll data sheet.com

a. Puls e te st; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing SPECIFICATIONS (TJ = 25 °C, unless ot herwise noted) PARAMETER SY MBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-sourc e breakdown voltage VDS VGS = 0 V, ID = 250 μA 60 - - V VDS temperature c oefficient VDS/TJ ID = 250 μA -3 3- mV/°CVGS(th) temperature co efficient VGS(th)/TJ -- 4 . 8- Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 1 - 2.8 V Gate-so urce leakage IGSS VDS = 0 V, VGS = ± 20 V - - 100 nA Ze ro gate voltage drain current IDSS VDS = 60 V, VGS = 0 V - - 1 μAVDS = 60 V, VGS = 0 V, TJ = 70 °C - - 10 On-state drain current a ID(on) VDS  5 V, VGS =10 V 10 - - A Dr ain-source on-state resistance a RDS(on) VGS =10 V, ID = 10 A - 0.024 VGS = 4.5 V, ID = 5 A - 0.028 Forward tra nsconductance a gfs VDS = 10 V, ID = 10 A - 39 - S Dynamic b Input capacitance Ciss VDS = 30 V, VGS = 0 V, f = 1 MHz - 790 - pFOutput capaci tance Coss - 330 - Reve rse transfer capacitance Crss -1 4 - Total gate charge Qg VDS = 30 V, VGS = 10 V, ID = 5 A - 11.1 17 nCVDS = 30 V, VGS = 4.5 V, ID = 5 A -5 . 28 Gate-sou rce charge Qgs -2 . 2- Gate-drain charge Qgd -1 . 1- Gate resi stance Rg f = 1 MHz 0.1 0.6 1.2  Turn-on de lay time td(on) VDD = 30 V, RL = 6 , ID  5 A, VGEN = 10 V, Rg = 1  -7 1 5 ns Rise time tr -2 1 4 0 Turn-off delay time td(off) -1 0 2 0 Fall time tf -1 0 2 0 Turn-on de lay time td(on) VDD = 30 V, RL = 6 , ID  5 A, VGEN = 4.5 V, Rg = 1  -1 3 25 Rise time tr -2 5 5 0 Turn-off delay time td(off) -1 0 20 Fall time tf -2 2 4 5 Drain-Source Body Diode Characteristics Continuous source-drain diode current I S TC = 25 °C - 15 APulse diode f orward current ISM -- 4 0 Body diode voltage VSD IS = 5 A, VGS = 0 V - 0.79 1.2 V Bo dy diode reverse recovery time trr IF = 5 A, di/dt = 100 A/μs, TJ = 25 °C -3 0 6 0 n s Body diode reverse recovery charge Qrr - 60 120 nC Revers e recovery fall time ta -1 5- nsReverse recovery rise time tb -1 5- E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSP7464N A ll data sheet.com

ACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistanc e vs. Drain Current and Gate Voltage Gate Charge Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 100 1000 10000 012345 Axis Title 1st line 2nd line 2nd line ID - Drain Current (A) VDS - Drain-to-Source Vol tage (V) 2nd line VGS = 10 V thru 4 V VGS = 3 V 100 1000 10000 0.01 0.03 0.04 0 1 02 03 04 0 Axis Title 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) ID - Drain Cur rent (A) 2nd line VGS = 10 V VGS = 4.5 V 100 1000 10000 0369 1 Axis Title 1st line 2nd line 2nd line VGS - Gate-to-Source Volt age (V) Qg - Total Gate Charge (nC) 2nd line VDS = 30 V VDS = 48 V VDS = 15 V ID = 10 A 100 1000 10000 012345 Axis Tit le 1st line 2nd line 2nd line ID - Drain Current (A) VGS - Gate-to-Source Voltage (V 2nd line TC = 25 °C TC =- 5 5 ° CTC = 125 °C 100 1000 10000 300 900 1200 0 1 02 03 04 05 06 0 Axis Title 1st line 2nd line 2nd line C - Capacitance (pF) VDS - Drain-to-Source Vol tage (V) 2nd line Crss Coss Ciss 100 1000 10000 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 5 0 - 25 0 2 55 07 5 1 0 0 1 2 5 1 5 0 Axis Title 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normaliz ed) TJ - Junction Temp erature (°C) 2nd line ID = 10 A VGS = 10 V VGS = 4.5 V E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSP7464N A ll data sheet.com

ACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Power, Junction-to-Case Threshold Voltage Single Pulse Power, Junction-to-Ambient Safe Operating Area, Junction-to-Ambient 100 1000 10000 0.1 Axis Title 1st line 2nd line 2nd line IS - Source Current (A) VSD - Source-to-Drain Voltage (V 2nd line TJ = 150 °C TJ = 25 °C 1000 10000 1st line 2nd line 100 1000 10000 02 5 5 0 7 5 1 0 0 1 2 5 1 5 0 Axis Title 1st line 2nd line 2nd line Po wer (W) TC - Case Temp erature (°C) 2nd line 100 1000 10000 1.0 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 Axis Title 1st line 2nd line 2nd line VGS(th) (V) TJ - Temperature (°C) 2nd line ID = 250 μA 100 1000 10000 0.001 0.01 0. 1 1 10 100 1000 Axis Title 1st line 2nd line 2nd line Power (W) Time (s) 2nd line 100 1000 10000 0.01 100 0.1 1 10 100 Axis Title 1st line 2nd line 2nd line ID - Drain Current (A) VDS - Drain-to-Source Vol tage (V) (1) VGS > minimum VGS at which RDS(on) is specified Limited by RDS(on) (1) TA = 25 °C Single pulse 100 ms 10 ms 1 ms 100 μs 1 s 10 s DC IDM Limited ID(ON) Limited Threshol d Voltage 100 1000 10000 1.0 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 Axis Title 2nd line VGS(th) (V) TJ - Temperature (°C) 2nd line ID = 250 μA E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSP7464N A ll data sheet.com

ACTERISTICS (25 °C, unless otherwise noted) Current Derating a Note a. The power di ssipation PD is based on T J max. = 150 °C, using junctio n-to-case thermal resistance, and is more useful in settling the upper dissipation li mit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldw ide manufac turin g capability. Products may be manufactured at one of several qualified locatio ns. Reliability da ta for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / ta pe drawings, part marking, and reliability data, see www.vishay.com/ppg?75480. 100 1000 10000 02 5 5 0 7 5 1 0 0 1 2 5 1 5 0 Axis Title 2nd line ID - Drain Current (A) TC - Case Temp erature (°C) 2nd line Package limited 100 1000 10000 0.01 0.1 0.0001 0.00 1 0. 01 0.1 1 10 100 1000 Axis Title 1st line 2nd line Normalized Effecti ve Transient Thermal Im pedance Square Wave Pu lse Duration (s) 2nd line 0.1 0.05 0.02 Single pu lse Duty Cycle = 0.5 0.2 100 1000 10000 0.01 0.1 0.0001 0.001 0.01 0. 1 1 Axis Title 1st line 2nd line Normalized Effectiv e Transient Thermal Im pedance Square Wave Pul se Duration (s) 2nd line 0.1 0.05 0.02 Single pu lse Duty Cycle = 0.5 0.2 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSP7464N A ll data sheet.com

E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSP7464N A ll data sheet.com

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