SSP7462N

SSP7462N VBSEMI | Alldatasheet

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Technical content

N-Channel 60-V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21 Available  TrenchFET ® Power MOSFET  100 % R g Tested  100 % UIS Tested

APPLICATIONS

 Battery Swit ch  DC/DC Converter S N-Channel MOSFET G D Top View PIN1 DFN5X6 Top View Bottom View PRODUCT SUMMARY VDS (V) 60 RDS(on) max. () at VGS = 10 V 0.024 RDS(on) max. () at VGS = 4.5 V 0.028 Qg typ. (nC) 5.2 ID (A) 15a, g Configuration Single Notes a. Pa c kage limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unle ss otherwise noted) PARAMETER SYMBO L LIMIT UNIT Drain-source voltage VDS 60 VGate-sourc e voltage VGS ± 20 Continuous drain current (TJ = 150 °C) TC = 25 °C ID 15 a A TC = 70 °C 9 a TA = 25 °C 10.3 b, c TA = 70 °C 8.1 b, c Pulsed drain current (t = 100 μs) IDM 40 Continuous source-drain diode current TC = 25 °C IS 12 a TA = 25 °C 3 b, c Single pulse avalanche current L = 0.1 mH IAS 15 Single pulse avalanche energy EAS 11.3 mJ Maximum power dissipation TC = 25 °C PD 35.7 WTC = 70 °C 22.9 TA = 25 °C 3.6 b, c TA = 70 °C 2.3 b, c Operating junction and storage temperature range TJ, Tstg -55 to +150 °CSolder ing recommendations (peak temperature) c 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMU M UNIT Maximum junction-to-ambient b t  10 s R thJA 25 35 °C/WMaximum j unction-to-case (drain) Steady state R thJC 2.7 3.5 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSP7462N A ll data sheet.com

a. Pu ls e test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing SPECIFICATIONS (TJ = 25 °C, unles s otherwise noted) PARAMETER S YMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-so urce breakdown voltage VDS VGS = 0 V, ID = 250 μA 60 - - V VDS temperature coefficient VDS/TJ ID = 250 μA -3 3- mV/° CVGS(th) temperature c oefficient VGS(th)/TJ -- 4 . 8- Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 1 - 2.8 V Gate -source leakage IGSS VDS = 0 V, VGS = ± 20 V - - 100 nA Z ero gate voltage drain current IDSS VDS = 60 V, VGS = 0 V - - 1 μAVDS = 60 V, VGS = 0 V, TJ = 70 °C - - 10 On-state drain current a ID(on) VDS  5 V, VGS =10 V 10 - - A Drain-source on-state resistance a RDS(on) VGS =10 V, ID = 10 A - 0.024 VGS = 4.5 V, ID = 5 A - 0.028 Forwar d transconductance a gfs VDS = 10 V, ID = 10 A - 39 - S Dynamic b Input capacitance Ciss VDS = 30 V, VGS = 0 V, f = 1 MHz - 790 - pFOutput capac itance Coss - 330 - Rev erse transfer capacitance Crss -1 4 - Total gate charge Qg VDS = 30 V, VGS = 10 V, ID = 5 A - 11.1 17 nCVDS = 30 V, VGS = 4.5 V, ID = 5 A -5 . 28 Gate-so urce charge Qgs -2 . 2- Gate-drain charge Qgd -1 . 1- Gate re sistance Rg f = 1 MHz 0.1 0.6 1.2  Turn-on d elay time td(on) VDD = 30 V, RL = 6 , ID  5 A, VGEN = 10 V, Rg = 1  -7 1 5 ns Rise time tr -2 1 4 0 Turn-of f delay time td(off) -1 0 2 0 Fal l time tf -1 0 2 0 Turn-on d elay time td(on) VDD = 30 V, RL = 6 , ID  5 A, VGEN = 4.5 V, Rg = 1  -1 3 25 Rise time tr -2 5 5 0 Turn-of f delay time td(off) -1 0 20 Fal l time tf -2 2 4 5 Drain-Sour ce Body Diode Characteristics Continuous source-drain diode current I S TC = 25 °C - 15 APulse diod e forward current ISM -- 4 0 Body diode voltage VSD IS = 5 A, VGS = 0 V - 0.79 1.2 V B ody diode reverse recovery time trr IF = 5 A, di/dt = 100 A/μs, TJ = 25 °C -3 0 6 0 n s Body diode reverse recovery charge Qrr - 60 120 nC Reve rse recovery fall time ta -1 5- nsRevers e recovery rise time tb -1 5- E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSP7462N A ll data sheet.com

ARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resis tance vs. Drain Current and Gate Voltage Gate Charge Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 100 1000 10000 012345 Ax is Title 1st line 2nd line 2nd line ID - Drain Current (A VDS - Drain-to-Source V oltage (V) 2nd line VGS = 10 V thru 4 V VGS = 3 V 100 1000 10000 0.02 0.03 0.04 0 1 02 03 04 0 Axis Title 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) ID - Drain Cu rrent (A) 2nd line VGS = 10 V VGS = 4.5 V 100 1000 10000 0369 1 2 Axis Title 1st line 2nd line 2nd line VGS - Gate-to-Source Vol tage (V) Qg - Total Gate Charge (nC) 2nd line VDS = 30 V VDS = 48 V VDS = 15 V ID = 10 A 100 1000 10000 012345 Ax is Title 1st line 2nd line 2nd line ID - Drain Current (A VGS - Gate-to-Source Voltage (V) 2nd line TC = 25 °C TC =- 5 5 °CTC = 125 °C 100 1000 10000 600 900 1200 0 1 02 03 04 05 06 0 Axis Title 1st line 2nd line 2nd line C - Capacitance (pF) VDS - Drain-to-Source V oltage (V) 2nd line Crss Coss Ciss 100 1000 10000 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 5 0 - 2 50 2 55 07 5 1 0 0 1 2 5 1 5 0 Axis Title 1st line 2nd line 2nd line RDS(on) - On-Resistance (Norma lized) TJ - Junction Tem perature (°C) 2nd line ID = 10 A VGS = 10 V VGS = 4.5 V E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSP7462N A ll data sheet.com

ARACTERISTICS (25 °C, unless otherwise noted) Source-Drai n Diode Forward Voltage Power, Junction-to-Case Threshold Voltage Single Pulse Power, Junction-to-Ambient Safe Operating Area, Junction-to-Ambient 100 1000 10000 100 Axis Title 1st line 2nd line 2nd line IS - Source Current (A VSD - Source-to-Drain Voltage (V) 2nd line TJ = 150 °C TJ = 25 °C 1000 10000 1st line 2nd line 100 1000 10000 5 5 0 7 5 1 0 0 1 2 5 1 5 0 Axis Title 1st line 2nd line 2nd line P ower (W) TC - Case Tem perature (°C) 2nd line 100 1000 10000 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 Axis Title 1st line 2nd line 2nd line VGS(th) (V) TJ - Temperature (°C) 2nd line ID = 250 μA 100 1000 10000 0.001 0. 01 0.1 1 10 100 1000 Axis Title 1st line 2nd line 2nd line Power (W Time (s) 2nd line 100 1000 10000 0.1 100 0.1 1 10 100 Axis Title 1st line 2nd line 2nd line ID - Drain Current (A VDS - Drain-to-Source V oltage (V) (1) VGS > minimu m VGS at which RDS(on) is specified Limited by RDS(on) (1) TA = 25 °C Sing le pulse 100 ms 10 ms 1 ms 100 μs 1 s 10 s DC IDM Limite d ID(ON) Limite d Thresho ld Voltage 100 1000 10000 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 Axis Title 2nd line VGS(th) (V) TJ - Temperature (°C) 2nd line ID = 250 μA E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSP7462N A ll data sheet.com

ARACTERISTICS (25 °C, unless otherwise noted) Current Derating a Note a. The power di ssipation PD is based on T J max. = 150 °C, using juncti on-to-case thermal resistance, and is more useful in settling the upper dissipation li mit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldw ide manuf ac turing ca pability. Products may be manufactured at one of several qualified locatio ns. Reliability da ta for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / ta pe drawings, part marking, and reliability data, see www.vishay.com/ppg?75480. 100 1000 10000 02 5 5 0 7 5 1 0 0 1 2 5 1 5 0 Axis Title 2nd line ID - Drain Current (A TC - Case Tem perature (°C) 2nd line Package limited 100 1000 10000 0.01 0.1 0.0001 0. 00 1 0.01 0.1 1 10 100 1000 Axis Title 1st line 2nd line Normalized Ef fective Transient Thermal I mpedance Square Wave P ulse Duration (s) 2nd line 0.1 0.05 0.02 Single p ulse Duty Cycle = 0.5 0.2 100 1000 10000 0.01 0.1 0.0001 0.001 0. 01 0.1 1 Axis Title 1st line 2nd line Normalized Effecti ve Transient Thermal I mpedance Square Wave P ulse Duration (s) 2nd line 0.1 0.05 0.02 Single p ulse Duty Cycle = 0.5 0.2 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSP7462N A ll data sheet.com

E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSP7462N A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSP7462N A ll data sheet.com