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Technical content
22 A, 30 V , RDS(ON) 7.5 m N-Channel Enhancement MOSFET 18-Sep-2013 Rev. B Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal po wer loss and heat dissipation.
FEATURES
Low R DS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8PP saves board space. Fast switching speed. High performance trench technology. APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones
PACKAGE INFORMATION
SOP-8PP 3K 13’ inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 V TA=25°C 22 Continuous Drain Current 1 TA=70°C ID A Pulsed Drain Current 2 I DM 50 A Continuous Source Current (Diode Conduction) 1 I S 2.3 A TA=25°C 5 Power Dissipation 1 TA=70°C PD 2.2 W Operating Junction and Storage Temperature Range TJ, TSTG -55 ~ 150 °C Thermal Resistance Rating t≦10 sec 25 Maximum Junction to Ambient 1 Steady State RθJA °C / W Notes 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. A 0.85 1.00 θ 0 ° 10 ° B 5.3 BSC. b 5.2 BCS C 0.15 0.25 c 0.30 0.50 D 3.8 BCS. d 1.27BSC E 6.05 BCS. e 5.55 BCS. F 0.03 0.30 f 0.10 0.40 G 4.35 BCS. g 1.2 BCS. L 0.40 0.70 SOP-8PP
22 A, 30 V , RDS(ON) 7.5 m N-Channel Enhancement MOSFET 18-Sep-2013 Rev. B Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Gate-Threshold Voltage V GS(th) 1 - - V V DS = VGS, ID = 250μA Gate-Body Leakage I GSS - - ±100 nA V DS =0, VGS=20V - - 1 V DS =24V, VGS=0 Zero Gate Voltage Drain Current I DSS - - 5 μA VDS =24V, VGS=0,TJ=55°C On-State Drain Current 1 I D(ON) 40 - - A V DS =5V, VGS= 10V - - 7.5 V GS=10V, ID =2A Drain-Source On-Resistance 1 R DS(ON) - - 11.5 mΩ VGS=4.5V, ID =2A Forward Transconductance 1 g FS - 40 - S V DS=15V,,ID =2A Diode Forward Voltage V SD - 0.7 - V I S=2A, VGS=0 Dynamic 2 Total Gate Charge Q g - 16 - Gate-Source Charge Q gs - 5 - Gate-Drain Charge Q gd - 6 - nC ID=10A VDS=15V VGS=4.5V Turn-On Delay Time Td (ON) - 5 - Rise Time T r - 4 - Turn-Off Delay Time Td (OFF) - 23 - Fall Time T f - 9 - nS ID=1A, VDD=15V VGEN=10V RL=6Ω Notes 1. Pulse test ：PW ≦ 300 us duty cycle ≦ 2%. 2. Guaranteed by design, not s ubject to production testing.