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-17A, -30V , RDS(ON) 13 m P-Channel Enhancement MOSFET 18-Sep-2013 Rev. D Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

FEATURES

 Low RDS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper leadframe SOP-8PP saves board space.  Fast switching speed.  High performance trench technology. APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

PACKAGE INFORMATION

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage V GS ±20 V TA=25°C -17 Continuous Drain Current 1 TA=70°C ID -14 A Pulsed Drain Current 2 I DM -50 A Continuous Source Current (Diode Conduction) 1 I S -2.1 A TA=25°C 5.0 Power Dissipation 1 TA=70°C PD 3.2 W Operating Junction and Storage Temperature Range TJ, TSTG -55~150 °C Thermal Resistance Rating t≦10 sec 25 Maximum Junction to Ambient 1 Steady-State RθJA °C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. S S S GD D D D A 0.85 1.00 θ 0 ° 10 ° B 5.3 BSC. b 5.2 BCS C 0.15 0.25 c 0.30 0.50 D 3.8 BCS. d 1.27BSC E 6.05 BCS. e 5.55 BCS. F 0.03 0.30 f 0.10 0.40 G 4.35 BCS. g 1.2 BCS. L 0.40 0.70 SOP-8PP

-17A, -30V , RDS(ON) 13 m P-Channel Enhancement MOSFET 18-Sep-2013 Rev. D Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage V (BR)DSS -30 - - V V GS=0, ID = -250μA Gate-Threshold Voltage V GS(th) -1 - - V V DS=VGS, ID = -250μA Gate-Body Leakage I GSS - - ±100 nA V DS=0, VGS= ±25V - - -1 V DS= -24V, VGS=0 Zero Gate Voltage Drain Current I DSS - - -5 μA VDS= -24V, VGS=0, TJ=55°C On-State Drain Current 1 I D(ON) -50 - - A V DS= -5V, VGS= -10V Drain-Source On-Resistance 1 R DS(ON) - - 19 mΩ VGS= -4.5V, ID= -9.3A Forward Transconductance 1 g FS - 29 - S V DS= -15V,,ID= -11.5A Diode Forward Voltage V SD - -0.8 - V I S=2.5A, VGS=0 Dynamic 2 Total Gate Charge Q g - 25 - Gate-Source Charge Q gs - 11 - Gate-Drain Charge Q gd - 17 - nC ID= -11.5A VDS= -15V VGS= -5V Turn-On Delay Time Td (ON) - 15 - Rise Time T r - 13 - Turn-Off Delay Time Td (OFF) - 100 - Fall Time T f - 54 - nS ID= -1A, VDD= -15V VGEN= -10V RL=6Ω Notes: 1. Pulse test ：PW ≦ 300 μs duty cycle ≦ 2%. 2. Guaranteed by design, not s ubject to production testing.

-17A, -30V , RDS(ON) 13 m P-Channel Enhancement MOSFET 18-Sep-2013 Rev. D Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES

-17A, -30V , RDS(ON) 13 m P-Channel Enhancement MOSFET 18-Sep-2013 Rev. D Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES