SSP7404NA_15 SECOS | Alldatasheet
Document overview
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Technical content
35A, 30V , R DS(ON) 2.8 mΩΩ ΩΩ N-Channel Enhancement MOSFET 30-Dec-2013 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
/circle6 Low R DS(on) trench technology. /circle6 Low thermal impedance. /circle6 Fast switching speed.
APPLICATIONS
/circle6 White LED boost converters. /circle6 Automotive Systems. /circle6 Industrial DC/DC Conversion Circuits.
PACKAGE INFORMATION
(T A=25° C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V TA=25° C 35 Continuous Drain Current 1 TA=70° C ID A Pulsed Drain Current 2 IDM 100 A Continuous Source Current (Diode Conduction) 1 I S 7.3 A TA=25° C 5 Power Dissipation 1 TA=70° C PD 3.2 W Operating Junction and Storage Temperature Range TJ, T STG -55~150 ° C Thermal Resistance Data t≦10 sec 25 Maximum Junction to Ambient 1 Steady State R θJA ° C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. A 0.85 1.00 θ 0° 10 ° B 5.40 5.60 b 5.10 5.30 C 0.15 0.25 c 0.30 0.50 D 3.71 3.91 d 1.27BSC E 5.95 6.15 e 5.45 5.65 F 0.08 0.24 f 0.20 0.35 G 4.25 4.45 g 1.10 - SOP-8PP
35A, 30V , R DS(ON) 2.8 mΩΩ ΩΩ N-Channel Enhancement MOSFET 30-Dec-2013 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS
(T A=25° C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test conditions Static Gate-Threshold Voltage V GS(th) 1 - - V V DS =V GS , I D =250 µA Gate-Body Leakage I GSS - - ±100 nA V DS =0, VGS = ±20V - - 1 V DS =24V, VGS =0 Zero Gate Voltage Drain Current I DSS - - 25 µA VDS =24V, VGS =0,TJ=55° C On-State Drain Current 1 I D(ON) 50 - - A V DS =5V, VGS =10V - - 2.8 V GS =10V, I D =20A Drain-Source On-Resistance 1 R DS(ON) - - 4 m Ω VGS =4.5V, I D =16A Forward Transconductance 1 g FS - 26 - S V DS =15V, ,ID =20A Diode Forward Voltage V SD - 0.73 - V I S=3.7A, VGS =0 Dynamic 2 Total Gate Charge Q g - 64 - Gate-Source Charge Q gs - 17 - Gate-Drain Charge Q gd - 32 - nC ID =20A VDS =15V VGS =4.5V Turn-On Delay Time Td (ON) - 17 - Rise Time Tr - 28 - Turn-Off Delay Time Td (OFF) - 168 - Fall Time Tf - 65 - nS ID =20A, VDS =15V VGEN =10V R L=0.8 Ω, RGEN =6Ω Input Capacitance C iss - 13001 - Output Capacitance C oss - 966 - Reverse Transfer Capacitance C rss - 939 - pF V DS =15V, V GS =0, f=1MHz Notes: 1. Pulse test ：PW ≦ 300 us duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing.
35A, 30V , R DS(ON) 2.8 mΩΩ ΩΩ N-Channel Enhancement MOSFET 30-Dec-2013 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS CURVE
35A, 30V , R DS(ON) 2.8 mΩΩ ΩΩ N-Channel Enhancement MOSFET 30-Dec-2013 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS CURVE