DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

3.6A, 150V , RDS(ON) 255 m N-Channel Enhancement MOSFET Elektronische Bauelemente 07-Apr-2011 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

FEATURES

 Low R DS(on) trench technology.  Low thermal impedance.  Fast switching speed.

APPLICATIONS

 White LED boost converters.  Automotive Systems.  Industrial DC/DC Conversion Circuits.

PACKAGE INFORMATION

SOP-8PP 3K 7’ inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 150 V Gate-Source Voltage V GS ±20 V Continuous Drain Current 1 TA=25°C ID 3.6 A TA=70°C 2.9 Pulsed Drain Current 2 I DM 20 A Continuous Source Current (Diode Conduction) 1 I S 6.2 A Power Dissipation 1 TA=25°C PD W TA=70°C 3.2 Operating Junction and Storage Temperature Range TJ, TSTG -55~150 °C Thermal Resistance Data Maximum Junction to Ambient 1 t≦10 sec RθJA °C / W Steady State 65 Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 1.00 1.10 θ 0 ° 12 ° B 5.70 5.80 b 0.33 0.51 C 0.20 0.30 d 1.27BSC D 3.61 3.98 e 1.35 1.75 E 5.40 6.10 g 1.10 - F 0.08 0.20 G 3.60 3.99 SOP-8PP B E F G g A e b θ D C d

3.6A, 150V , RDS(ON) 255 m N-Channel Enhancement MOSFET Elektronische Bauelemente 07-Apr-2011 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T A=25°C unless otherwise specified) Parameter S ymbol Min T yp Max Unit Test condition Static Gate-Threshold Voltage V GS(th) 1 - - V V DS=VGS, ID=250μA Gate-Body Leakage I GSS - - ±10 nA V DS=0, VGS= ±20V Zero Gate Voltage Drain Current I DSS - - 1 μA VDS=120V, VGS=0 - - 10 VDS=120V, VGS=0,TJ=55°C On-State Drain Current 1 I D(ON) 10 - - A V DS=5V, VGS=10V Drain-Source On-Resistance 1 R DS(ON) - - 255 mΩ VGS=10V, ID=2.9A - - 290 VGS=4.5V, ID=2.7A Forward Transconductance 1 g FS - 10 - S V DS=15V,,ID=2.9A Diode Forward Voltage V SD - 0.76 - V I S=3.1A, VGS=0 Dynamic 2 Total Gate Charge Q g - 10.8 - nC ID=2.9A VDS=75V VGS=4.5V Gate-Source Charge Q gs - 3.3 - Gate-Drain Charge Q gd - 5.6 - Turn-On Delay Time Td (ON) - 10.1 - nS ID=2.9A, VDD=75V VGEN=10V RL=25.9Ω, RGEN=6Ω Rise Time T r - 10 - Turn-Off Delay Time Td (OFF) - 50 - Fall Time T f - 22 - Input Capacitance C iss - 848 - pF V DS=15V, VGS=0, f=1MHz Output Capacitance C oss - 69 - Reverse Transfer Capacitance C rss - 29 - Notes: 1. Pulse test ：PW≦300μs duty cycle≦2%. 2. Guaranteed by design, not s ubject to production testing.

3.6A, 150V , RDS(ON) 255 m N-Channel Enhancement MOSFET Elektronische Bauelemente 07-Apr-2011 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS CURVE

3.6A, 150V , RDS(ON) 255 m N-Channel Enhancement MOSFET Elektronische Bauelemente 07-Apr-2011 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS CURVE