SSP5N90 FAIRCHILD | Alldatasheet
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Technical content
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 900V Low RDS(ON) : 2.300 Ω (Typ.) Advanced Power MOSFET Thermal Resistance Junction-to-Case Case-to-Sink Junction-to-Ambient R θJC R θCS R θJA Ο C /W Characteristic Max. UnitsSymbol Typ.
FEATURES
Continuous Drain Current (TC=25 Ο Continuous Drain Current (TC=100 Ο Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 Ο Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 “ from case for 5-seconds Characteristic Value UnitsSymbol IDM VGS EAS IAR EAR dv/dt ID PD TJ , TSTG TL A V mJ A mJ V/ns W Ο C A Ο C VDSS V TO-220 1.Gate 2. Drain 3. Source SSP5N90A BVDSS = 900 V RDS(on) = 2.9 Ω ID = 5 A 900 3.2 529 1.5 140 1.12 - 55 to +150 300 0.89 62.5 0.5 30 +_ ©1999 Fairchild Semiconductor Corporation Rev. B
Electrical Characteristics (TC=25 Ο C unless otherwise specified) Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse CharacteristicSymbol Max. UnitsTyp.Min. Test Condition Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain( “Miller” ) Charge gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd BVDSS ΔBV/ΔTJ VGS(th) RDS(on) IGSS IDSS V Ο C V nA µA Ω Ω pF ns nC VGS=0V,ID=250µA ID=250µA See Fig 7 VDS=5V,ID=250µA VGS=30V VGS=-30V VDS=900V VDS=720V,TC=125 Ο C VGS=10V,ID=2.5A * VDS=50V,ID=2.5A VDD=450V,ID=5A, RG=13.6 Ω See Fig 13 VDS=720V,VGS=10V, ID=5A See Fig 6 & Fig 12 Drain-to-Source Leakage Current VGS=0V,VDS=25V,f =1MHz See Fig 5 Source-Drain Diode Ratings and Characteristics Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS ISM VSD trr Qrr CharacteristicSymbol Max. UnitsTyp.Min. Test Condition A V ns µC Integral reverse pn-diode in the MOSFET TJ=25 Ο C ,IS=5A,VGS=0V TJ=25 Ο C ,IF=5A diF/dt=100A/µs O4 O5 O5O4 SSP5N90A 900 2.0 1.14 105 9.0 25.0 3.5 100 -100 250 2.9 1440 125 200 4.0 1110 540 5.62 1.4 Notes ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature L=40mH, IAS=5A, VDD=50V, RG=27Ω , Starting TJ =25 Ο C ISD 5A, di/dt 120A/ µs, VDD BVDSS , Starting TJ =25 Ο C Pulse Test : Pulse Width = 250 µs, Duty Cycle 2% Essentially Independent of Operating Temperature