SSP45N10 SECOS | Alldatasheet

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Technical content

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SSP45N10 45A , 100V , R DS(ON) 22 mΩΩ ΩΩ N-Channel Enhancement Mode MOSFET 26-Oct-2013 Rev. A Page 1 of 4 SOP -8PP TOP VIEW 45N10 /boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen/boxopen /UIrecord/UIrecord /UIrecord/UIrecord /boxopen/boxopen /boxopen/boxopen = Date Code RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

The SSP45N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent R DS(ON) and gate charge for most of the synchronous buck converter applications .The SSP45N10 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved.

FEATURES

/circle6 Simple Drive Requirement /circle6 Small Package Outline MARKING

PACKAGE INFORMATION

ABSOLUTE MAXIMUM RATINGS ( TA=25° C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V TC =25° C 45 Continuous Drain Current 1 , V GS @10V TC =100° C ID A Pulsed Drain Current 2 TC =25° C IDM 100 A Power Dissipation 4 T C =25° C P D 90 W Single Pulse Avalanche Energy 3 EAS 98 mJ Single Pulse Avalanche Current IAS 41 A Operating Junction and Storage Temperature Range Tj, T stg -55~150 ° C Thermal Resistance Rating Maximum Junction to Case 1 R θJC 1.4 ° C / W Maximum Junction to Ambient 1 R θJA 36 ° C / W Package MPQ Leader Size SOP-8PP 3K 13 inch A 0.80 1.00 θ 0° 10 ° B 5.3 BSC. b 5.2 BCS C 0.15 0.25 c 0.20 0.50 D 3.8 BCS. d 1.27BSC E 6.05 BCS. e 5.65 BCS. F 0.03 0.30 f 0.10 0.40 G 4.35 BCS. g 1.3 BCS. L 0.40 0.70

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SSP45N10 45A , 100V , R DS(ON) 22 mΩΩ ΩΩ N-Channel Enhancement Mode MOSFET 26-Oct-2013 Rev. A Page 2 of 4

ELECTRICAL CHARACTERISTICS

(T A=25 °C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BV DSS 100 - - V V GS =0, I D =250 µA Gate-Threshold Voltage V GS(th) 2.5 - 4.5 V V DS =V GS , I D =250 µA Forward Transconductance g fs - 27 - S V DS =5V, I D =30A Gate Resistance R G - 1.9 3.8 Ω f=1MHz Gate-Body Leakage Current I GSS - - ±100 nA VGS =±20V TJ=25° C - - 1 V DS =80V, V GS =0 Drain-Source Leakage Current T J=55° C IDSS - - 5 µA VDS =80V, V GS =0 - 19 22 V GS =10V, I D =30A Drain-Source On-Resistance 2 R DS(ON) - 25 30 m Ω VGS =7V, I D =15A Dynamic Total Gate Charge Q g - 27.6 - Gate-Source Charge Q gs - 11.4 - Gate-Drain (‘‘Miller’’) Charge Q gd - 7.9 - nC VDS =80V, VGS =10V, ID =30A Turn-on Delay Time 2 T d(on) - 15.6 - Rise Time T r - 17.2 - Turn-off Delay Time T d(off) - 16.8 - Fall Time Tf - 9.2 - nS VDD =50V, VGS =10V, R G =3.3 Ω, ID =30A Input Capacitance C iss - 1890 - Output Capacitance C oss - 268 - Reverse Transfer Capacitance C rss - 67 - pF VGS =0, VDS =15V, f=1.0MHz Guaranteed Avalanche Chatacteristics Single Pulse Avalanche Energy 5 EAS 53 - - mJ V DD =50V,L=0.1mH, I AS =30A Source-Drain Diode Diode Forward Voltage 2 V SD - - 1 V I S=1A, V GS =0 Continuous Source Current 1.6 I S - - 45 A Pulsed Source Current 2.6 I SM - - 100 A VD =V G =0, Force Current Reverse Recovery Time T RR - 34 - ns Reverse Recovery Charge Q RR - 47 - nC IF=30A, TJ=25° C dI/dt=100A/ µs Notes: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper , ≦10sec , 125 ℃/W at steady state 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 4. The power dissipation is limited by 150 ℃ junction temperature 5. The Min. value is 100% EAS tested guarantee. 6. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SSP45N10 45A , 100V , R DS(ON) 22 mΩΩ ΩΩ N-Channel Enhancement Mode MOSFET 26-Oct-2013 Rev. A Page 3 of 4 CHARACTERISTIC CURVES

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SSP45N10 45A , 100V , R DS(ON) 22 mΩΩ ΩΩ N-Channel Enhancement Mode MOSFET 26-Oct-2013 Rev. A Page 4 of 4 CHARACTERISTIC CURVES