SSP1027 SECOS | Alldatasheet
Document overview
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Technical content
-3.5 A, -20 V , RDS(ON) 97 mΩ P-Channel Enhancement Mode Mos.FET 01-June-2003 Rev. A Page 1 of 4 Bottom View B I G J PIN#1 IndentPIN#1 Indent F HK Side View A D E C 1 6 3 4 TDFN S1 G1 D2 D1 G2 S2 D1 D2 RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The SSP1027 utilized advance processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SSP1027 is universally used for all commercial-industrial applications.
FEATURES
Parameter Symbol Ratings Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage V GS ±12 V Continuous Drain Current3 ID @TA=25℃ ID @TA=70℃ -3.5 -2.8 A Pulsed Drain Current1 I DM -15 A Power Dissipation P D @TA=25℃ 0.7 W Linear Derating Factor 0.006 W/ ℃ Operating Junction and Storage Temperature Range T J, TSTG -55 ~ +150 ℃ THERMAL DATA Parameter Symbol Ratings Unit Thermal Resistance Junction-ambient3 (Max) R θJA 98 ℃/W A 1.900 2.100 F 0.520 0.720 B 1.900 2.100 G 0.650 TYP D 0.203 REF J 0.900 1.100 E 0.000 0.050 K 0.250 0.350
-3.5 A, -20 V , RDS(ON) 97 mΩ P-Channel Enhancement Mode Mos.FET 01-June-2003 Rev. A Page 2 of 4 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test Conditions Static Drain-Source Breakdown Voltage BVDSS -20 - - V VGS = 0, ID = -250 uA Gate Threshold Voltage VGS(th) -0.35 - -0.8 V VDS = VGS, ID = -250 uA Gate Leakage Current IGSS - - ±100 nA VDS = 0 V, VGS = ±12 V Drain-Source Leakage Current (Tj=25℃) - - -1 VDS = -20 V, VGS = 0 Drain-Source Leakage Current (Tj=70℃) IDSS - - -5 uA VDS = -20 V, VGS = 0, TJ = 55°C On-State Drain Current ID(on) -6 - - A VDS ≦ -5 V, VGS = -4.5 V Forward Transconductance gfs - 6 - S VDS = -5 V, ID = -2.8 A Diode Forward Voltage V SD - -0.8 -0.2 V I S = -1.5 A, VGS = 0 V - 76 95 VGS = -4.5 V, ID = -3.4 A - 97 120 VGS = -2.5 V, ID = -2.4 A Drain-Source On-Resistance RDS(ON) - 123 145 mΩ VGS = -1.8 V, ID = -1.7 A Dynamic Total Gate Charge2 Qg - 4.8 8 Gate-Source Charge Qgs - 1.0 - Gate-Drain Charge Qgd - 1.0 - nC ID = -2.8 A VDS = -6 V VGS = -4.5 V Turn-on Time Td(on) - 10 16 Rise Time Tr - 13 23 Turn-off Time Td(off) - 18 25 Fall Time Tf - 15 20 nS VDD = -6 V ID = -1 A VGEN = -4.5 V RG = 6 Ω RL = 6 Ω Input Capacitance Ciss - 485 - Output Capacitance Coss - 85 - Reverse Transfer Capacitance Crss - 40 - pF VGS = 0 V VDS = -6 V f = 1.0 MHz Notes: 1. Pulse width limited by maximum junction temperature. 2. Pulse width≦300us, dutycycle≦2%. 3. Surface mounted on 1 in copper pad of FR4 board; 180 °C/W when mounted on minimum copper pad.
-3.5 A, -20 V , RDS(ON) 97 mΩ P-Channel Enhancement Mode Mos.FET 01-June-2003 Rev. A Page 3 of 4 CHARACTERISTIC CURVES
-3.5 A, -20 V , RDS(ON) 97 mΩ P-Channel Enhancement Mode Mos.FET 01-June-2003 Rev. A Page 4 of 4 CHARACTERISTIC CURVES (con’d)