SSN3043

SSN3043 SECOS | Alldatasheet

Document overview

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• PDF pages: 4

Technical content

255mA , 20V , R DS(ON) 3.4 Ω N-Channel Enhancement Mode Power MOSFET 28-Oct-2013 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. KA /box1/box1 /box1/box1 RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free

DESCRIPTION

These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry.

FEATURES

/circle6 Energy Efficient APPLICATION DC-DC converters, load switching, power management in portable and battery–powered products such as computers, printers, cellular and cordless telephones. MARKING

PACKAGE INFORMATION

Parameter Symbol Rating Unit Drain – Source Voltage VDS 20 V Gate – Source Voltage - Continuous V GS ±10 V TA=25° C 255 Steady State TA=85° C 185 Continuous Drain Current 1 t≤ 5 s, TA=25° C ID 285 mA Steady State ,TA=25 °C 440 Power Dissipation 1 t≤ 5 s, TA=25° C PD 545 mW TA=25° C 210 Continuous Drain Current 2 Steady State TA=85° C ID 155 mA Power Dissipation 2 Steady State ,T A=25 °C P D 310 mW Pulsed Drain Current (tp ≤10 µs) I DM 400 mA Source Current (Body Diode) 2 I S 286 mA Maximum Lead Temperature for Soldering Purposes, (1/8” from case for 10 seconds) TL 260 ° C Junction & Storage Temperature T J, T STG -55 ~ 150 ° C NOTE: 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 2. Surface−mounted on FR4 board using the minimum recommended pad size. SOT-723 /box1/box1 /box1/box1：： ：：Date Code A 1.150 1.250 F 0.170 0. 270 B 0.750 0.850 G 0.270 0.370 C - 0.500 H 0 0.050 D 1.150 1.250 I - 0.150 E 0.800TYP. 11 11 GATE 22 22 SOURCE 33 33 DRAIN Top View

255mA , 20V , R DS(ON) 3.4 Ω N-Channel Enhancement Mode Power MOSFET 28-Oct-2013 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. MAXIMUM RATINGS (T J=25° C unless otherwise specified) Parameter Symbol Rating Unit Steady State 1 280 t = 5 s 1 228 Maximum Junction–Ambient Steady State Minimum Pad 2 R θJA 400 ° C / W ELECTRICAL CHARACTERISTICS (T A=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions OFF Characteristics Drain-Source Breakdown Voltage V(BR)DSS 20 - - V V GS =0, I D =100µA Drain−Source Breakdown Voltage Temperature Coefficient V (BR)DSS / T J - 27 - mV/° C ID =100µA, Reference to 25 °C Gate-Source Leakage Current I GSS - - 1 µA V GS = ±5V, V DS =0 - - 1 V DS =16V, V GS =0, TJ =25 °C Zero Gate Voltage Drain Current IDSS - - 10 µA VDS =16V, VGS =0, TJ =125 °C ON Characteristics 1 Gate Threshold Voltage V GS(TH) 0.4 - 1.3 V Gate Threshold Temperature Coefficient V GS(TH) / T J - -2.4 - mV/° C VDS =V GS , ID = 250 µA Forward Transconductance g FS - 0.275 - S V DS =5V, ID =100mA - 1.5 3.4 V GS =4.5V, I D =10mA - 1.6 3.8 V GS =4.5V, I D =255mA - 2.4 4.5 V GS =2.5V, I D =1mA - 5.1 10 V GS =1.8V, I D =1mA Drain-Source On Resistance R DS(ON) - 6.8 15 Ω VGS =1.65V, I D =1mA Dynamic Characteristics Turn-on Delay Time T d(on) - 13 - Rise Time T r - 15 - Turn-off Delay Time T d(off) - 94 - Fall Time 2 T f - 55 - nS VGS =4.5V, VDD =5V ID =10mA R G =6Ω Input Capacitance 2 C iss - 11 - Output Capacitance 2 C oss - 8.3 - Reverse Transfer Capacitance 2 C rss - 2.7 - pF V DS =10V, VGS =0, f=1MHz Source-Drain Diode - 0.83 1.2 V GS =0V, I S=286mA, TJ =25 °C Forward Diode Voltage V SD - 0.69 - V VGS =0V, I S=286mA, TJ =125 °C Reverse Recovery Time T rr - 9.1 - Charge Time T a - 7.1 - Discharge Time T b - 2 - nS Reverse Recovery Charge 2 Q rr - 3.7 - nC VGS =0V, VDD =20V, dISD/dt=100A/ µS IS=286mA Notes: 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 2. Surface−mounted on FR4 board using the minimum recommended pad size. 3. Pulse Test: Pulse Width ≦ 300 µs, Duty cycle ≦ 2% 4. Switching characteristics are independent of operating junction temperature.

255mA , 20V , R DS(ON) 3.4 Ω N-Channel Enhancement Mode Power MOSFET 28-Oct-2013 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES

255mA , 20V , R DS(ON) 3.4 Ω N-Channel Enhancement Mode Power MOSFET 28-Oct-2013 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES