SSM9987GH

SSM9987GH SSC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 5

Technical content

N-CHANNEL ENHANCEMENT MODE POWER MOSFET 02/27/2008 Rev.1.00 www.SiliconStandard.com 1 PRODUCT SUMMARY

DESCRIPTION

The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version ABSOLUTE MAXIMUM RATINGS Pb-free; RoHS-compliant Low Gate Charge Single Drive Requirement Fast Switching Performance (SSM9987GH) are available for low-profile aplications. BVDSS 80V RDS(ON) 90mΩ ID 15A G D S TO-251(J) G D S TO-252(H) G D S Symbol Units VDS V VGS V ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Thermal Resistance Junction-case Max. 3.6 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W THERMAL DATA Parameter Storage Temperature Range Total Power Dissipation 34.7 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.28 Continuous Drain Current, VGS @ 10V 9 Pulsed Drain Current1 50 Gate-Source Voltage ±25 Continuous Drain Current, VGS @ 10V 15 Parameter Rating Drain-Source Voltage 80 SSM9987GH

02/27/2008 Rev.1.00 www.SiliconStandard.com 2

ELECTRICAL CHARACTERISTICS

(TJ=25oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 80 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.09 - V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=10A - - 90 mΩ VGS=4.5V, ID=7A - - 105 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=5V, ID=10A - 15 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=80V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=150oC) VDS=64V ,VGS=0V - - 100 uA IGSS Gate-Source Leakage VGS=±25V - - ±100 nA Qg Total Gate Charge2 ID=10A - 11 18 nC Qgs Gate-Source Charge VDS=64V - 3 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 6 - nC td(on) Turn-on Delay Time2 VDS=40V - 8 - ns tr Rise Time ID=10A - 12 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 19 - ns tf Fall Time RD=4Ω -3 - ns Ciss Input Capacitance VGS=0V - 980 1570 pF Coss Output Capacitance VDS=25V - 75 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF Rg Gate Resistance f=1.0MHz - 1.1 1.7 Ω SOURCE-DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=10A, VGS=0V - - 1.2 V trr Reverse Recovery Time2 IS=10A, VGS=0V, - 33 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 44 - nC Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. SSM9987GH

02/27/2008 Rev.1.00 www.SiliconStandard.com 3 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics trr Qrr Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0369 12 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 7 .0V 5.0V 4.5V V G =3.0V 03 69 12 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C V G =3.0V 10V 7 .0V 5.0V 4.5V 100 140 180 24 68 10 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =7 A T C =25 o C 0.4 0.7 1.0 1.3 1.6 1.9 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =1 0A V G =10V 0.4 0.8 1.2 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) (V) V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C SSM9987GH

02/27/2008 Rev.1.00 www.SiliconStandard.com 4 Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Qrr Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform Q VG 4.5V QGS QGD QG Charge 0 5 10 15 20 25 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =1 0 A V DS =4 0V V DS =5 0 V V DS =6 4 V 100 1000 10000 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.1 1.0 10.0 100.0 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) 100us 1ms 10ms 100ms DCT C =25 o C Single Pulse 02 46 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o CT j =25 o C V DS =5V SSM9987GH

02/27/2008 Rev.1.00 www.SiliconStandard.com 5 Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties.