SSM9973GM

SSM9973GM SSC | Alldatasheet

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www.SiliconStandard.com 1 of 5 BV DSS 60V R DS(ON) 80mΩ I D 3.9A SO-8

DESCRIPTION

Pb-free; RoHS compliant. Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SSM9973M is in an SO-8 package, which is widely preferred for commercial and industrial surface mount applications. This device is suitable for low voltage applications such as DC/DC converters. Simple drive requirement Lower gate charge Fast switching characteristics BV R I ABSOLUTE MAXIMUM RATINGS 12/10/2004 Rev.2.03 Dual N-channel Enhancement-mode Power MOSFETs I Symbol Units VDS V VGS V ID @ TA=25°C ID @ TA=70°C IDM A PD @ TA=25°C W/°C TSTG TJ Symbol Value Unit Rthj-a Thermal Resistance Junction-ambient 3 Max. 62.5 °C/W Rating 3.9 A Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current3 2.5 A Pulsed Drain Current1 20 2 W -55 to 150 °C Operating Junction Temperature Range -55 to 150 °C Linear Derating Factor 0.016 Storage Temperature Range Parameter Total Power Dissipation ± 20 THERMAL DATA SSM9973GM

www.SiliconStandard.com 2 of 5 12/10/2004 Rev.2.03 ELECTRICAL CHARACTERISTICS @ T = 25 C (unless otherwise specified)j o Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 60 - - V Δ BVDSS/ ΔTj Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA - 0.06 - V/°C RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=3.9A - - 80 mΩ VGS=4.5V, ID=2A - - 100 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=3.9A - 3.5 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=60V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70oC) VDS=48V ,VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS=- - nA Qg Total Gate Charge2 ID=3.9A - 8 13 nC Qgs Gate-Source Charge VDS=48V - 2 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 4 - nC td(on) Turn-on Delay Time2 VDS=30V - 8 - ns tr Rise Time ID=1A - 4 - ns td(off) Turn-off Delay Time RG=3.3Ω , VGS=10V - 20 - ns tf Fall Time RD=30Ω -6- ns Ciss Input Capacitance VGS=0V - 700 1120 pF Coss Output Capacitance VDS=25V - 80 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=3.9A, VGS=0V - - 1.2 V trr Reverse Recovery Time IS=3.9A, VGS=0V, - 28 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 35 - nC Notes: 1.Pulse width limited by maximum junction temperature. 2.Pulse width <300us, duty cycle <2%. 3.Surface-mounted on 1 in2 copper pad of FR4 board ; 135°C/W when mounted on minimum copper pad. ± 20V ±100 SSM9973GM SOURCE-DRAIN DIODE

www.SiliconStandard.com 3 of 5 12/10/2004 Rev.2.03 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance vs. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage vs. Reverse Diode Junction Temperature 0.5 1.5 2.5 -50 0 50 100 150 T j ,Junction Temperature ( o C) VGS(th) (V) 0.0 0.5 1.0 1.5 2.0 2.5 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) V G =10V I D =3.9A 3579 1 1 V GS , Gate-to-Source Voltage (V) RDS(ON) (mΩ ) I D =3.9A T A =25 o C 012345678 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) V G =3.0V T A =25 o C 10V 6.0V 5.0V 4.5V 012345678 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =150 o C V G =3.0V 10V 6.0V 5.0V 4.5V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C SSM9973GM

www.SiliconStandard.com 4 of 5 12/10/2004 Rev.2.03 Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform td(on) tr td(off) tf VDS VGS 10% 90% Q VG 4.5V QGS QGD QG Charge 100 1000 10000 1 5 9 1 31 72 12 52 9 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz Ciss Coss Crss 0.01 0.1 100 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 1ms 10ms 100ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135℃℃ ℃℃/W t T 0.02 048 1 2 1 6 2 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =3.9A V DS =30V V DS =38V V DS =48V SSM9973GM

Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expre ss or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. www.SiliconStandard.com 5 of 512/10/2004 Rev.2.03 SSM9973GM