SSM9973 SECOS | Alldatasheet
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Features
- Simple Drive Requirement * Low Gate Charge Thermal Data RoHS Compliant Product
3.9A, 60V,RDS(ON) 80m N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Total Gate Charge RDS(ON) http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Parameter Symbol Max.Typ. Test ConditionMin. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current (Tj=70 ) Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS BVDS/ Tj VGS(th) IGSS IDSS Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf 0.06 1.0 3.0 100 100 700 V V nA uA uA m nC nS pF Ω VGS=0V VDS=25V f=1.0MHz VDD=30V ID=1A VGS=10V RG=3.3 RD=30 Ω Ω ID=3.9A VDS=48V VGS=4.5V VGS=10V, ID=3.9A VGS=4.5V, ID=2A VGS=0V, ID=250uA VGS= 20V± VDS=60V,VGS=0 VDS=48V,VGS=0 VDS=VGS, ID=250uA Reference to 25 ,ID=1mA Source-Drain Diode Parameter Symbol Max.Typ. Test ConditionMin. Unit Forward On Voltage Reverse Recovery Time Reverse Recovery Charge VDS Trr Qrr 1120 IS=3.9A, VGS=0V. Is=3.9A, VGS=0V V ns nC 1.2 Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width 300us, dutycycle 2%. 3.Surface mounted on 1 inch2 copper pad of FR4 board; 135 when mounted on min. copper pad. dl/dt=100A/us °C/W Forward Transconductance Gfs S3.5 VDS=10V, ID=3.9A_ 01-Jun-2002 Rev. A Page 2 of 4 o C o C o C o C o Ω
3.9A, 60V,RDS(ON) 80m N-Channel Enhancement Mode Power Mos.FET Ω Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode 01-Jun-2002 Rev. A Page 3 of 4 Characteristics Curve http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
3.9A, 6 0V,RDS(ON) 80m N-Channel Enhancement Mode Power Mos.FET Ω F i g 7. G a t e C h ar ge C h ar ac t e r i s t i c s F i g 8. T yp i c al C ap ac i t an c e C h ar ac t e r i s t i c s F i g 9. M ax i m u m S af e O p e r at i n g A r e a F i g 10. E f f e c t i ve T r an s i e n t T h e r m a l I m p e d an c e F i g 1 1. S w i t c h i n g T i m e C i r c u i t F i g 12. G a t e C h ar ge W ave f o r m 01 -Jun-2002 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual