SSM9972GI

SSM9972GI SSC | Alldatasheet

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www.SiliconStandard.com 1 of 5 N-channel Enhancement-mode Power MOSFET BVDSS 60V RDS(ON) 18mΩ ID 35A The SSM9972GI achieves fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC Pb-free; RoHS-compliant TO-220CFM PRODUCT SUMMARY DESCRIPTION Notes: 1. Pulse width must be limited to avoid exceeding the safe operating area. 2. Pulse width <300us, duty cycle <2%. converters and general switching circuits. The SSM9972GI is in TO-220CFM for through-hole mounting where a small footprint is required on the board, G D S TO-220CFM (suffix I) and/or an external heatsink is to be attached. These devices are manufactured with an advanced process, providing improved on-resistance and switching performance. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Units VDS VGS ID IDM PD W/°C TSTG TJ Symbol Parameter Value Units RΘ JC Maximum thermal resistance, junction-case 4 °C/W RΘ JA Maximum thermal resistance, junction-ambient 62 °C/W Drain-source voltage 60 V Gate-source voltage ±25 V Continuous drain current, TC = 25°C 35 A TC = 100°C 22 A Pulsed drain current1 120 A Total power dissipation, TC = 25°C 31 W -55 to 150 °C Operating junction temperature range -55 to 150 °C Linear derating factor 0.25 THERMAL CHARACTERISTICS Storage temperature range SSM9972GI 9/20/2006 Rev.3.1

ELECTRICAL CHARACTERISTICS (at Tj = 25°C, unless otherwise specified) Notes: 1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C. 2.Pulse width <300us, duty cycle <2%. Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-source breakdown voltage V GS=0V, ID= 250uA 60 - - V Δ BVDSS/ ΔTj Breakdown voltage temperature coefficient Reference to 25°C, ID=1mA - 0.06 - V/°C RDS(ON) Static drain-source on-resistance V GS=10V, ID=23A - - 18 mΩ VGS(th) Gate threshold voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward transconductance V DS=10V, ID=23A - 40 - S IDSS Drain-source leakage current VDS=60V, VGS=0V - - 10 uA VDS=48V ,VGS=0V, Tj = 150°C - - 25 uA IGSS Gate-source leakage current VGS=±25V - - ±100 nA Qg Total gate charge 2 ID=23A - 35 56 nC Qgs Gate-source charge VDS=48V - 9.5 - nC Qgd Gate-drain ("Miller") charge V GS=4.5V - 20 - nC td(on) Turn-on delay time 2 VDS=30V - 12 - ns tr Rise time ID=35A - 37 - ns td(off) Turn-off delay time R G=3.3Ω , V GS=10V - 47 - ns tf Fall time R D=0.86Ω - 59 - ns Ciss Input capacitance VGS=0V - 3160 5060 pF Coss Output capacitance VDS=25V - 280 - pF Crss Reverse transfer capacitance f=1.0MHz - 230 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward voltage 2 IS= 23A, VGS=0V - - 1.2 V trr Reverse recovery time IS=23A, VGS=0V, - 36 - ns Qrr Reverse recovery charge dI/dt=100A/µs - 45 - nC www.SiliconStandard.com 2 of 5 SSM9972GI 9/20/2006 Rev.3.1 VGS=4.5V, ID=12A - - 22 mΩ Rg Gate resistance f=1.0MHz - 1.6 2.4 Ω

www.SiliconStandard.com 3 of 5 SSM9972GI 9/20/2006 Rev.3.1 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance vs. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage vs. Reverse Diode Junction Temperature 120 02468 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C = 150o C 10V 7.0V 5.0V 4.5V V G =3.0V 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (mΩ ) I D =1 2A T C =25 o C 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =23A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.2 0.7 1.2 1.7 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) (V) 120 02468 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 7.0V 5.0V 4.5V V G =3.0V

www.SiliconStandard.com 4 of 5 SSM9972GI 9/20/2006 Rev.3.1 Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform Q VG 4.5V QGS QGD QG Charge 02 0 4 0 6 0 8 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =48V V DS =38V V DS =30V I D =2 3A 100 02468 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o CT j =25 o C V DS =5V 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.1 100 1000 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC 100 1000 10000 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss

www.SiliconStandard.com 5 of 5 PHYSICAL DIMENSIONS - TO-220CFM PART MARKING - TO-220 PACKING: Moisture sensitivity level MSL3 1000pcs in tubes packed inside a 9972GI YWWSSS DATE/LOT CODE: Y = last digit of the year WW = work week (01 -> 52) SSS = lot code sequence PART NUMBER: 9972GI = SSM9972GI moisture barrier bag (MBB). Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expre ss or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. Millimeters MIN NOM MAX A 4.30 4.60 4.90 A1 2.30 2.65 3.00 b 0.50 0.70 0.90 b1 0.95 1.20 1.50 c 0.45 0.65 0.80 c2 2.30 2.60 2.90 E 9.70 10.00 10.40 L4 14.70 15.40 16.10 φ ---- 3.20 ---- e ---- 2.54 ---- 1. All dimensions are in m illimeters. 2. Dimension do not include m old protrusions. SYMBOLS A c E φ b e A c E b e SSM9972GI 9/20/2006 Rev.3.1