SSM9971GD

SSM9971GD SSC | Alldatasheet

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www.SiliconStandard.com 1 of 5 Dual N-channel Enhancement-mode Power MOSFETs BVDSS 60V RDS(ON) 50mΩ ID 5A The SSM9971GD acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC ABSOLUTE MAXIMUM RATINGS VDS VGS ID IDM PD W/°C TSTG TJ Symbol Parameter Value Units RΘJA Maximum thermal resistance, junction-ambient 62.5 °C/W Symbol Parameter Value Units Drain-source voltage 60 V Gate-source voltage Continuous drain current 3, TA = 25°C 5 A TA = 70°C 3.2 A Pulsed drain current 1,2 20 A Operating junction temperature range -55 to 150 °C Linear derating factor 0.016 Storage temperature range Total power dissipation 3, TA = 25°C 2 W -55 to 150 °C THERMAL CHARACTERISTICS ± 25 V Pb-free; RoHS-compliant SO-8 PRODUCT SUMMARY DESCRIPTION Notes: 1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C. 2.Pulse width <300us, duty cycle <2%. 3.Mounted on a square inch of copper pad on FR4 board; 90°C/W when mounted on the minimum pad area required for soldering. converters and general load-switching circuits. The SSM2310GD is supplied in an RoHS-compliant PDIP-8 package, which is widely used for medium power commercial and industrial applications, where through- hole insertion into the board is required. S1 G1 PDIP-8 SSM9971GD 10/16/2005 Rev.3 .1

www.SiliconStandard.com 2 of 5 ELECTRICAL CHARACTERISTICS (at Tj = 25°C, unless otherwise specified) Notes: 1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C. 2.Pulse width <300us, duty cycle <2%. SSM9971GD 10/16/2005 Rev.3 .1 Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-source breakdown voltage V GS=0V, ID=250uA 60 - - V Δ BVDSS/ ΔTj Breakdown voltage temperature coefficient Reference to 25°C, ID=1mA - 0.06 - V/°C RDS(ON) Static drain-source on-resistance2 V GS=10V, ID=5A - - 50 mΩ VGS=4.5V, ID=2.5A - - 60 mΩ VGS(th) Gate threshold voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward transconductance V DS=10V, ID=5A - 7 - S IDSS Drain-source leakage current VDS=60V, VGS=0V - - 1 uA VDS=48V ,VGS=0V, Tj = 70°C - - 25 uA IGSS Gate-source leakage current VGS=±25V - - ±100 nA Qg Total gate charge 2 ID=5A - 32.5 - nC Qgs Gate-source charge VDS=48V - 4.9 - nC Qgd Gate-drain ("Miller") charge V GS=10V - 8.8 - nC td(on) Turn-on delay time 2 VDS=30V - 9.6 - ns tr Rise time ID=5A - 10 - ns td(off) Turn-off delay time R G=3.3Ω , VGS=10V - 30 - ns tf Fall time R D=6Ω - 5.5 - ns Ciss Input capacitance VGS=0V - 1560 - pF Coss Output capacitance VDS=25V - 156 - pF Crss Reverse transfer capacitance f=1.0MHz - 110 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward voltage 2 IS=1.6A, VGS=0V - - 1.2 V trr Reverse-recovery time IS=5A, VGS=0V, - 29.2 - ns Qrr Reverse-recovery charge dI/dt=100A/µs - 48 - nC

www.SiliconStandard.com 3 of 5 SSM9971GD 10/16/2005 Rev.3 .1 Fig 1. Typical output characteristics Fig 2. Typical output characteristics Fig 3. On-resistance vs. gate voltage Fig 4. Normalized on-resistance vs. junction temperature Fig 5. Forward characteristic of Fig 6. Gate threshold voltage vs. the reverse diode junction temperature 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 10V 6.0V 4.5V V G =3.0V 0.5 1.5 2.5 -50 0 50 100 150 T j ,Junction Temperature ( o C) VGS(th) (V) 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =150 o C V G =3.0V 10V 6.0V 4.5V 0.01 0.1 100 V SD , Source-to-Drain Voltage (V) IS (A) T j =25 o CT j =150 o C 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) V G =10V I D =5A 3579 1 1 V GS , Gate-to-Source Voltage (V) RDS(ON) (mΩ ) I D =5A T A =25 o C

www.SiliconStandard.com 4 of 5 SSM9971GD 10/16/2005 Rev.3 .1 Fig 7. Gate charge characteristics Fig 8. Typical capacitance characteristics Fig 9. Maximum safe operating area Fig 10. Effective transient thermal impedance Fig 11. Switching time waveforms Fig 12. Gate charge diagram 100 1000 10000 1 5 9 1 31 72 12 52 9 V DS , Drain-to-Source Voltage (V) f=1.0MHz Ciss Crss Coss 0 5 10 15 20 25 30 35 40 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =48V V DS =38V V DS =30V I D =5A td(on) tr td(off) tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rθja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta t T 0.02 0.01 0.05 0.1 0.2 Duty foctor=0.5 Single Pulse R θja=90°C/W 0.01 0.1 100 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 1ms 10ms 100ms DC

Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expre ss or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. www.SiliconStandard.com 5 of 5 PHYSICAL DIMENSIONS PART MARKING PACKING: Moisture sensitivity level MSL1 50 pcs in antistatic tube, 20 tubes (1000 pieces) per box. SSM9971GD 10/16/2005 Rev.3 .1 PART NUMBER: 9971GD XXXXXX YWWSSS DATE/LOT CODE: (YWWSSS) Y = last digit of the year WW = week SSS = lot code sequence SYMBOL MIN MAX A1 0.38 — A2 2.90 5.00 b 0.35 0.56 C 0.20 0.36 D 9.00 10.20 E 7.62 8.26 E1 6.09 7.20 e 2.54 (TYP) E2 8.3 11.00 b e L E C D L 2.92 — Dimensions do not include mold protrusions. All dimensions in millimeters.