SSM9971 SECOS | Alldatasheet
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Continuous Drain Current, VGS @10V @10V 3 2Continuous Drain Current, VGS Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance Junction-ambient A V V A A ID@TA=70 /W C W / C C W VDS VGS ID@TA=25 IDM PD@TA=25 Tj, Tstg Rthj-a 5.0 2.7 0.02 -55~+150 Parameter Symbol Ratings Unit Parameter Symbol Ratings Unit 1,2 Max. o o o Co Co Co Thermal Data RoHS Compliant Product
01-Jun-2002 Rev. A Page 2 of 4 Elektronische Bauelemente 32.5 4.9 8.8 9.6 5.5 156 109 nC nS pF VGS=0V VDS=25V f=1.0MHz VDD=30V ID=5A VGS=10V RG=3.3 RD=6 Ω Ω ID=5A VDS=48 V VGS= 10V _ _ 0.06 1.0 3.0 100 V V/ Reference to 25C , ID=1m oo C V nA uA uA m Ω VGS=10V, ID=5A VGS=4.5V, ID=2 .5A VGS=0V, ID=250uA VGS= 25V± VDS=60V,VGS=0 VDS=48V,VGS=0 VDS=VGS, ID=250uA S VDS=10V, ID=5A__ 1658 A Total Gate Charge Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS BVDS/ Tj VGS(th) IGSS Forward Transconductance Gfs o C o RDS(ON) Parameter Symbol Max.Typ. Test ConditionMin. Unit Forward On Voltage Reverse Recovery Time Trr _ Reverse Recovery Change _Qrr nC nS 29.2 1 62 = A, VGS=0V. VSD __ IS= A, VGS=0V.V1.2 IS dl/dt=100A/us http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Electrical Characteristics( Tj=25 C Unless otherwise specified) o SSM9971 5A, 60V,RDS(ON) 50m N-Channel Enhancement Mode Power Mos.FET Ω Notes: 1. 2.Pulse width 300us, dutycycle 2%.≦≦ 3.Surface mounted on 1 in copper pad of FR4 board;120 C/W when mounted on min. copper pad. 2 o Pulse width limited by Max. junction temperature. IDSS Parameter Symbol Max.Typ. Test ConditionMin. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current(Tj=70 C )
5A, 60V,RDS(ON) 50m N-Channel Enhancement Mode Power Mos.FET Ω http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 Characteristics Curve Fig 6. Gate Threshold Voltage v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature
5A, 60V,RDS(ON) 50m N-Channel Enhancement Mode Power Mos.FET Ω http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 10ms DC Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 120::::/W