SSM9960 SSC | Alldatasheet

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www.SiliconStandard.com 1 of 5 N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge BVDSS 40V Simple drive requirement R DS(ON) 16mΩ Fast switching ID 42A

Description

The SSM9960H is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters. The through-hole version, the SSM9960J in TO-251, is available for low-footprint vertical G D S TO-251 (J) G D S TO-252 (H) G D S This device is available with Pb-free lead finish (second-level interconnect) as SSM9960GH or SSM9960GJ. SSM9960(G)H,J 11/16/2004 Rev.2.1 Absolute Maximum Ratings Symbol Units VDS V VGS V ID @ TA=25°C ID @ TA=100°C IDM A PD @ TA=25°C W/°C TSTG TJ Symbol Value Unit Rthj-c Thermal Resistance Junction-case Max. 2.8 °C/W Rthj-a Thermal Resistance Junction-ambient Max. 110 °C/W Thermal Data Parameter Storage Temperature Range Total Power Dissipation 45 W -55 to 150 °C Operating Junction Temperature Range -55 to 150 °C Linear Derating Factor 0.36 Continuous Drain Current, VGS @ 10V 26 A Pulsed Drain Current1 195 Gate-Source Voltage ± 20 Continuous Drain Current, VGS @ 10V 42 A Parameter Rating Drain-Source Voltage 40

www.SiliconStandard.com 2 of 5 SSM9960(G)H,J 11/16/2004 Rev.2.1 Electrical Characteristics @ Tj=25oC (unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 40 - - V Δ BVDSS/Δ Tj Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA - 0.032 -V/°C RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A - - 16 mΩ VGS=4.5V, ID=18A - - 25 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=20A - 30 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=40V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=150oC) VDS=32V ,VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS= ± 20V - - ±100 nA Qg Total Gate Charge2 ID=20A - 18 - nC Qgs Gate-Source Charge VDS=20V - 6 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 12 - nC td(on) Turn-on Delay Time2 VDS=20V - 9 - ns tr Rise Time ID=20A - 110 - ns td(off) Turn-off Delay Time RG=3.3Ω , VGS=10V - 23 - ns tf Fall Time RD=1Ω - 10 - ns Ciss Input Capacitance VGS=0V - 1500 - pF Coss Output Capacitance VDS=25V - 250 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 180 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=45A, VGS=0V - - 1.3 V trr Reverse Recovery Time IS=20A, VGS=0V - 22 - ns Qrr Reverse Recovery Charge dI/dt = 100A/us - 27.4 - nC Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%.

www.SiliconStandard.com 3 of 5 SSM9960(G)H,J 11/16/2004 Rev.2.1 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance vs. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage vs. Reverse Diode Junction Temperature 100 150 200 0.0 1.5 3.0 4.5 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C V G =4.0V 6.0V 8.0V 10.0V 0 4 8 12 16 V GS , Gate-to-Source Voltage (V) RDS(ON) (mΩ ) I D =20A T C =25°C 0.5 1.5 2.5 -50 25 100 175 T j , Junction Temperature ( o C ) VGS(th) (V) 0.60 0.80 1.00 1.20 1.40 1.60 1.80 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) V G =10V I D =20A 100 120 140 0123456 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C V G =4.0V 6.0V 8.0V 10V 100 1000 V SD (V) IS(A) T j =25 o CT j =150 o C

www.SiliconStandard.com 4 of 5 SSM9960(G)H,J 11/16/2004 Rev.2.1 Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Circuit Fig 12. Gate Charge Circuit 100 1000 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T c =25 o C Single Pulse 10us 100us 1ms 10ms 100ms 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + Tc t T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 Single Pulse 0 102 03 04 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =20A V DS =12V V DS =16V V DS =20V 100 1000 10000 1 8 15 22 29 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz Ciss Coss Crss 0.5 x RATED VDS TO THE OSCILLOSCOPE 10 V D G S VDS VGS RG RD 0.5x RATED VDS TO THE OSCILLOSCOPE D G S VDS VGS IDI G 1~ 3 mA

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