SSM9926EM

SSM9926EM SSC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 6

Technical content

www.SiliconStandard.com 1 of 6 SSM9926EM N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance BVDSS 20V Capable of 2.5V gate drive RDS(ON) 30mΩ Low drive current I D 6A Surface-mount package

Description

ID @ TA=25°C ID @ TA=70°C IDM A PD @ TA=25°C W/°C TSTG TJ Symbol Value Unit Rthj-amb Thermal Resistance Junction-ambient Max. 62..5 °C/W Thermal Data Parameter Storage Temperature Range Total Power Dissipation 2 W -55 to 150 °C Operating Junction Temperature Range -55 to 150 °C Linear Derating Factor 0.016 Continuous Drain Current 3 4.8 A Pulsed Drain Current1,2 20 Gate-Source Voltage ±12 Continuous Drain Current3 6 A Parameter Rating Drain-Source Voltage 20 Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. SO-8 Rev.2.02 1/29/2004

www.SiliconStandard.com 2 of 6 SSM9926EM Electrical Characteristics @ Tj=25oC (unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V Δ BV DSS/ Δ Tj Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA - 0.1 - V/°C RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=6A - - 30 mΩ VGS=2.5V, ID=5.2A - - 45 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.5 - - V gfs Forward Transconductance VDS=10V, ID=6A - 15.6 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=20V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70oC) VDS=20V ,VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS= ±10V - - ±10 uA Qg Total Gate Charge2 ID=6A - 12.5 - nC Qgs Gate-Source Charge VDS=20V - 1 - nC Qgd Gate-Drain ("Miller") Charge VGS=5V - 6.5 - nC td(on) Turn-on Delay Time2 VDS=10V - 5 - ns tr Rise Time ID=1A - 9 - ns td(off) Turn-off Delay Time RG=3.3Ω ,VGS=5V - 26.2 - ns tf Fall Time RD=10Ω - 6.8 - ns Ciss Input Capacitance VGS=0V - 355 - pF Coss Output Capacitance VDS=20V - 190 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 85 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V,VS=1.2V - - 1.7 A ISM Pulsed Source Current ( Body Diode )1 --2 0 A VSD Forward On Voltage2 Tj=25°C,IS=1.7A,VGS=0V - - 1.2 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on FR4 board, t<10 sec. Rev.2.02 1/29/2004

www.SiliconStandard.com 3 of 6 SSM9926EM Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance vs. Junction Temperature 23456 V GS (V) RDS(ON) (m ΩΩΩΩ) I D =6A T C =25 o C 0 0.5 1 1.5 2 2.5 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C V GS =2.0V 4.5V 4.0V 3.5V 3.0V 2.5V 0.6 0.9 1.2 1.5 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) V GS =4.5V I D =6A 0 0.5 1 1.5 2 2.5 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C V GS =2.0V 4.5V 4.0V 3.5V 3.0V 2.5V Rev.2.02 1/29/2004

www.SiliconStandard.com 4 of 6 SSM9926EM Fig 5. Maximum Drain Current vs. Fig 6. Typical Power Dissipation Case Temperature Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance 25 50 75 100 125 150 T c , Case Temperature ( o C) ID , Drain Current (A) 0.5 1.5 2.5 0 30 60 90 120 150 T c , Case Temperature ( o C) PD (W) 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R thja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta t T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 Single Pulse 0.1 100 0.1 1 10 100 V DS (V) ID (A) T C =25 o C Single Pulse 1ms 10ms 100ms Rev.2.02 1/29/2004

www.SiliconStandard.com 5 of 6 SSM9926EM Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage vs. Reverse Diode Junction Temperature 0.3 0.6 0.9 1.2 1.5 -50 0 50 100 150 T j , Junction Temperature ( o C ) VGS(th) (V) 0 5 10 15 20 25 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =10V V DS =15V V DS =20V I D =6A 100 1000 1 8 15 22 29 V DS (V) C (pF) f=1.0MHz Ciss Coss Crss 0.01 0.1 100 0 0.4 0.8 1.2 1.6 V SD (V) IS(A) T j =25 o CT j =150 o C Rev.2.02 1/29/2004

www.SiliconStandard.com 6 of 6 Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expre ss or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. SSM9926EM Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform td(on) tr td(off) tf VDS VGS 10% 90% Q VG QGS QGD QG Charge 0.5 x RATED VDS TO THE OSCILLOSCOPE 5 v D G S VDS VGS RG RD RATED VDS TO THE OSCILLOSCOPE D G S VDS VGS IDIG 1~ 3 mA Rev.2.02 1/29/2004