SSM9916J

SSM9916H SSC | Alldatasheet

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www.SiliconStandard.com 1 of 6 SSM9916H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance BVDSS 18V Capable of 2.5V gate drive RDS(ON) 25mΩ Low drive current ID 35A Simple drive requirement

Description

ID @ TC=25°C ID @ TC=125°C IDM A PD @ TC=25°C W/°C TSTG TJ Symbol Value Unit Rthj-c Thermal Resistance Junction-case Max. 2.5 °C/W Rthj-a Thermal Resistance Junction-ambient Max. 110 °C/W Thermal Data Parameter Storage Temperature Range Total Power Dissipation 50 W -55 to 150 °C Operating Junction Temperature Range -55 to 150 °C Linear Derating Factor 0.4 Continuous Drain Current, VGS @ 4.5V 16 A Pulsed Drain Current1 90 Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V 35 A Parameter Rating Drain-Source Voltage 18 Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. ± 12 G D S TO-252(H) G D S TO-251(J) G D S Rev.2.02 1/29/2004

www.SiliconStandard.com 2 of 6 SSM9916H,J Electrical Characteristics @ Tj=25oC (unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 18 - - V Δ BV DSS/ Δ Tj Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA - 0.03 - V/°C RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=6A - - 25 mΩ VGS=2.5V, ID=5.2A - - 40 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 0.5 - 1 V gfs Forward Transconductance V DS=10V, ID=6A - 18 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=18V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=125oC) VDS=18V ,VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=- - nA Qg Total Gate Charge2 ID=18A - 17.5 - nC Qgs Gate-Source Charge V DS=18V - 1.2 - nC Qgd Gate-Drain ("Miller") Charge V GS=5V - 7.9 - nC td(on) Turn-on Delay Time2 VDS=10V - 7.3 - ns tr Rise Time ID=18A - 98 - ns td(off) Turn-off Delay Time RG=3.3 Ω ,VGS=5V - 25.6 - ns tf Fall Time RD=0.56Ω - 98 - ns Ciss Input Capacitance VGS=0V - 527 - pF Coss Output Capacitance V DS=18V - 258 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 112 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.3V - - 35 A ISM Pulsed Source Current ( Body Diode )1 -- 9 0 A VSD Forward On Voltage2 Tj=25°C, IS=35A, VGS=0V - - 1.3 V Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. ± 12V ±100 Rev.2.02 1/29/2004

www.SiliconStandard.com 3 of 6 SSM9916H,J Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance vs. Junction Temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) V G =4.5V I D =6A 100 01234567 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C V G =1.5V V G =2.5V V G =4.5V V G =3.5V 012345678 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C V G =1.5V V G =2.5V V G =3.5V V G =4.5V 123456 V GS (V) RDSON (m ΩΩΩΩ) I D =6A T C =25 o C Rev.2.02 1/29/2004

www.SiliconStandard.com 4 of 6 SSM9916H,J Fig 5. Maximum Drain Current vs. Fig 6. Typical Power Dissipation Case Temperature Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance 0 50 100 150 T c , Case Temperature ( o C) PD (W) 25 50 75 100 125 150 T c , Case Temperature ( o C) ID , Drain Current (A) 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R thjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PULSE 0.1 100 1000 0.1 1 10 100 V DS (V) ID (A) T c =25 o C Single Pulse 10us 1ms 10ms 100ms 100us Rev.2.02 1/29/2004

www.SiliconStandard.com 5 of 6 SSM9916H,J Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage vs. Reverse Diode Junction Temperature 0.2 0.45 0.7 0.95 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C ) VGS(th) (V) 0.01 0.1 100 0 0.4 0.8 1.2 1.6 V SD (V) IS (A) T j =25 o C T j =150 o C 100 1000 1 5 9 1 31 72 12 5 V DS (V) C (pF) f=1.0MHz Ciss Coss Crss 0 5 10 15 20 25 30 35 40 45 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =18A V DS =15V V DS =18V V DS =10V Rev.2.02 1/29/2004

www.SiliconStandard.com 6 of 6 Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expre ss or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. SSM9916H,J Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform td(on) tr td(off) tf VDS VGS 10% 90% Q VG QGS QGD QG Charge 0.5x RATED VDS TO THE OSCILLOSCOPE 5 v D G S VDS VGS RG RD RATED VDS TO THE OSCILLOSCOPE D G S VDS VGS IDIG 1~ 3 mA Rev.2.02 1/29/2004