SSM9915H

SSM9915H SSC | Alldatasheet

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Technical content

www.SiliconStandard.com 1 of 6 SSM 9915H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance BV DSS 20V Capable of 2.5V gate drive R DS(ON) 50mΩ Low drive current I D 20A Simple drive requirement

Description

ID@TC=25℃ A ID@TC=125℃ A IDM A PD@TC=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-c Thermal Resistance Junction-case Max. 4.8 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W Parameter Rating Drain-Source Voltage 20 Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V 20 Continuous Drain Current, VGS @ 4.5V 16 Pulsed Drain Current1 41 Total Power Dissipation 26 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.2 Thermal Data Parameter Storage Temperature Range Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. ± 10 G D S TO-252(H) G D S TO-251(J) G D S Rev.2.01 6/26/2003

www.SiliconStandard.com 2 of 6 SSM 9915H,J Electrical Characteristics @ Tj=25oC (unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 20 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.03 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance V GS=4.5V, ID=6A - - 50 mΩ VGS=2.5V, ID=5.2A - - 80 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.5 - 1 V gfs Forward Transconductance VDS=10V, ID=6A - 13 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=20V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=125oC) VDS=16V ,VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS=- - nA Qg Total Gate Charge2 ID=10A - 7.5 - nC Qgs Gate-Source Charge VDS=20V - 0.9 - nC Qgd Gate-Drain ("Miller") Charge V GS=5V - 4 - nC td(on) Turn-on Delay Time2 VDS=10V - 4.5 - ns tr Rise Time ID=10A - 49.5 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=5V - 12 - ns tf Fall Time RD=1Ω -6- ns Ciss Input Capacitance VGS=0V - 195 - pF Coss Output Capacitance VDS=20V - 126 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.3V - - 20 A ISM Pulsed Source Current ( Body Diode )1 -- 4 1 A VSD Forward On Voltage2 Tj=25℃, IS=20A, VGS=0V - - 1.3 V Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. ± 10V ±100 Rev.2.01 6/26/2003

www.SiliconStandard.com 3 of 6 SSM 9915H,J Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 0123456 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C V G =1.5V V G =2.5V V G =4.5V V G =3.5V 01234567 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C V G =1.5V V G =2.5V V G =3.5V V G =4.5V 123456 V GS (V) RDSON (m ΩΩΩΩ) I D =6A T C =25 o C 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) V G =4.5V I D =6A Rev.2.01 6/26/2003

www.SiliconStandard.com 4 of 6 SSM 9915H,J Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance 0 50 100 150 T c , Case Temperature ( o C) PD (W) 0.1 100 1000 0.1 1 10 100 V DS (V) ID (A) T c =25 o C Single Pulse 10us 1ms 10ms 100ms 100us 25 50 75 100 125 150 T c , Case Temperature ( o C) ID , Drain Current (A) 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R thjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PULSE Rev.2.01 6/26/2003

www.SiliconStandard.com 5 of 6 SSM 9915H,J Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.2 0.45 0.7 0.95 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C ) VGS(th) (V) 0.01 0.1 100 0 0.4 0.8 1.2 1.6 V SD (V) IS (A) T j =25 o C T j =150 o C 100 1000 1 5 9 1 31 72 12 52 9 V DS (V) C (pF) f=1.0MHz Ciss Coss Crss 0 2 4 6 8 10 12 14 16 18 20 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =20A V DS =16V V DS =20V V DS =12V Rev.2.01 6/26/2003

www.SiliconStandard.com 6 of 6 SSM 9915H,J Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expre ss or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform td(on) tr td(off) tf VDS VGS 10% 90% Q VG QGS QGD QG Charge 0.5x RATED VDS TO THE OSCILLOSCOPE 5 v D G S VDS VGS RG RD RATED VDS TO THE OSCILLOSCOPE D G S VDS VGS IDIG 1~ 3 mA Rev.2.01 6/26/2003