SSM9915 SECOS | Alldatasheet
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01-Jun-2002 Rev. A Page 2 of 4 Elektronische Bauelemente Notes: 1. 2.Pulse width 300us, dutycycle 2%.≦≦ 3. Surface mounted on 1 in copper pad of FR4 board. Pulse width limited by safe operating area. SSM9915 6.2A, 20V,RDS(ON) 50m N-Channel Enhancement Mode Power Mos.FET Ω t 10sec.≦ Parameter Symbol Max.Typ. Test ConditionMin. Unit Forward On Voltage Reverse Recovery Time Trr _ Reverse Recovery Change _Qrr nC nS 2.53 =10A, VGS=0V. VSD __ IS= A, VGS=0V.V1.2 IS dl/dt=100A/us http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Electrical Characteristics( Tj=25 C Unless otherwise specified) o 50 __ S VDS=10V, ID=5A__ CrssReverse Transfer Capacitance Forward Transconductance Gfs 0.78 __ Gate Resistance Rg f=1.0MHz nC nS pF VGS=0V VDS=20V f=1.0MHz VDD=10V ID=10A VGS=5 V RG=3.3 RD=1 Ω Ω ID=10A VDS=16 V VGS= 4.5V _ _ 0.03 0.5 1.2 100 V V/ Reference to 25C , ID=1m oo C V nA uA uA mΩ VGS=4.5V, ID=6A VGS=2.5V, ID=4 A VGS=0V, ID=250uA VGS= V±12 VDS=20V,VGS=0 VDS=16V,VGS=0 VDS=VGS, ID=250uA 360 580 A Total Gate Charge Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance BVDSS BVDS/ Tj IDSS Parameter Symbol Max.Typ. Test ConditionMin. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current(Tj=70 C ) VGS(th) IGSS o C o RDS(ON) Ω
6.2A, 20V,RDS(ON) 50m N-Channel Enhancement Mode Power Mos.FET Ω http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode
6.2A, 20V,RDS(ON) 50m N-Channel Enhancement Mode Power Mos.FET Ω http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform