SSM9577

SSM9577 SECOS | Alldatasheet

Document overview

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• PDF pages: 4

Technical content

-3.8A, -60V , R DS(O/glyph1197) 85m ΩΩ ΩΩ P-Channel Enhancement Mode Power MOSFET 24-May-2017 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

The SSM9577 is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent R DS(ON) and gate charge for most of the synchronous buck converter applications . The SSM9577 meet the RoHS and Green Product requirement with full function reliability approved.

FEATURES

/circle6 Advanced High Cell Density Trench Technology /circle6 Super Low Gate Charge /circle6 Green Device Available MARKING

PACKAGE INFORMATION

SOT-223 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS (T A =25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V TA =25°C -3.8 A Continuous Drain Current @VGS =10V 1 TA =70°C ID -3 A Pulsed Drain Current 3 IDM -8 A Total Power Dissipation T A =25°C P D 1.5 W Operating Junction and Storage Temperature Range TJ, T STG -55~150 °C Thermal Resistance Rating Maximum Thermal Resistance from Junction to Ambient 1 85 Maximum Thermal Resistance from Junction to Ambient 2 RθJA 125 Maximum Thermal Resistance from Junction to Case 1 R θJC 60 °C / W SOT-223 Top View A M B D LK F G H J E C

1 Gate

A 5.90 6.70 G - 0.18 B 6.70 7.30 H 2.00 REF. C 3.30 3.80 J 0.20 0.40 D 1.40 1.90 K 1.10 REF. E 4.45 4.75 L 2.30 REF. F 0.60 0.85 M 2.80 3.20 9577 /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4 /box4/box4 = Date code

-3.8A, -60V , R DS(O/glyph1197) 85m ΩΩ ΩΩ P-Channel Enhancement Mode Power MOSFET 24-May-2017 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS

(T J=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Drain-Source Breakdown Voltage BV DSS -60 - - V V GS =0, I D= -250uA Gate Threshold Voltage V GS(th) -1 - -2.5 V V DS =VGS , I D= -250uA Gate-Source Leakage Current IGSS - - ±100 nA V GS =±20V - - -1 V DS = -48V, V GS =0, T J=25°C Drain-Source Leakage Current IDSS - - -5 uA VDS = -48V, V GS =0, T J=55°C - - 85 V GS = -10V, I D= -3A Static Drain-Source On-Resistance 4 RDS(ON) - - 105 mΩ VGS = -4.5V, I D= -2A Total Gate Charge Q g - 11.8 - Gate-Source Charge Q gs - 1.9 - Gate-Drain Charge Q gd - 6.5 - nC ID= -3A VDS = -20V VGS = -4.5V Turn-On Delay Time T d(on) - 8.8 - Rise Time T r - 19.6 - Turn-Off Delay Time T d(off) - 47.2 - Fall Time T f - 9.6 - nS VDS= -15V ID= -1A VGS = -10V RG=3.3Ω Input Capacitance C iss - 1080 - Output Capacitance C oss - 73 - Reverse Transfer Capacitance Crss - 50 - pF VGS =0 VDS = -15V f=1MHz Source-Drain Diode Forward On Voltage 4 V SD - - -1.2 V IS= -1A, V GS =0V Continuous Source Current 1 I S - - -3.8 Pulsed Source Current 3 I SM - - -8 A Notes: 1. Surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2. When mounted on Min. copper pad. 3. The power dissipation is limited by 150°C junction temperature. 4. The data tested by pulsed, Pulse width ≦ 300us, Duty cycle ≦ 2%.

-3.8A, -60V , R DS(O/glyph1197) 85m ΩΩ ΩΩ P-Channel Enhancement Mode Power MOSFET 24-May-2017 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TYPICAL CHARACTERISTIC CURVES

-3.8A, -60V , R DS(O/glyph1197) 85m ΩΩ ΩΩ P-Channel Enhancement Mode Power MOSFET 24-May-2017 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TYPICAL CHARACTERISTIC CURVES