SSM9573 SECOS | Alldatasheet
Document overview
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Technical content
-2.7A , -60V , R DS(ON) 175m ΩΩ ΩΩ P-Channel Enhancement Mode Power MOSFET 11-Aug-2014 Rev.A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSM9573 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
FEATURES
/circle6 Lower Gate Charge /circle6 Simple Drive Requirement /circle6 Fast Switching Characteristic MARKING
PACKAGE INFORMATION
SOT-223 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS (T A=25° C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V TA=25° C -2.7 A Continuous Drain Current 1@V GS =10V TA=70° C ID -2 A Pulsed Drain Current 2 IDM -5 A Power Dissipation 3 T A=25° C P D 1.5 W Operating Junction & Storage Temperature T J, T STG -55~150 ° C Thermal Resistance Rating Thermal Resistance Junction-Ambient 1(Max). R θJA 85 ° C / W Thermal Resistance Junction-Case 1(Max). R θJC 60 ° C / W 9573 /box4/box4/box4 /box4/box4/box4 /box4/box4/box4 /box4/box4/box4 /box4/box4 /box4/box4 /box4/box4 /box4/box4 = Date code SOT-223 A 5.90 6.70 G - 0.18 B 6.70 7.30 H 2.00 REF. C 3.30 3.80 J 0.20 0.40 D 1.42 1.90 K 1.10 REF. E 4.45 4.75 L 2.30 REF. F 0.60 0.85 M 2.80 3.20 Top View A M B D LK F G H J E C Gate Source Drain
-2.7A , -60V , R DS(ON) 175m ΩΩ ΩΩ P-Channel Enhancement Mode Power MOSFET 11-Aug-2014 Rev.A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS
(T J = 25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BV DSS -60 - - V V GS =0, I D = -250 µA Gate-Threshold Voltage V GS(th) -1 - -3 V V DS =V GS , I D = -250 µA Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±20V TJ=25° C - - -1 V DS = -48V, V GS =0 Drain-Source Leakage Current T J=55° C IDSS - - -5 µA VDS = -48V, V GS =0 - - 175 V GS = -10V, I D = -2.5A Static Drain-Source On-Resistance 2 R DS(ON) - - 230 m Ω VGS = -4.5V, I D = -1.5A Total Gate Charge Q g - 4.59 - Gate-Source Charge Q gs - 1.39 - Gate-Drain (‘‘Miller’’) Change Q gd - 1.62 - nC ID = -2A VDS = -20V VGS = -4.5V Turn-on Delay Time 2 T d(on) - 17.4 - Rise Time Tr - 5.4 - Turn-off Delay Time T d(off) - 37.2 - Fall Time Tf - 2.4 - nS VDS = -15V VGS = -10V R G = 3.3 Ω ID = -1A Input Capacitance C iss - 531 - Output Capacitance C oss - 59 - Reverse Transfer Capacitance C rss - 38 - pF VGS =0 VDS =15V f =1.0MHz Source-Drain Diode Diode Forward Voltage 2 V SD - - -1.2 V I S= -1A, VGS =0 Continuous Source Current 1.4 I S - - -2.7 A Pulsed Source Current 2.4 I SM - - -5 A VDS =V GS =0, Force Current Note: 1. Surface mounted on a 1 inch2 FR4 board with 2OZ copper, t ≦10sec. , 125° C /W when mounted on Min. copper pad. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3. The power dissipation is limited by 150° C junction temperature 4. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
-2.7A , -60V , R DS(ON) 175m ΩΩ ΩΩ P-Channel Enhancement Mode Power MOSFET 11-Aug-2014 Rev.A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES
-2.7A , -60V , R DS(ON) 175m ΩΩ ΩΩ P-Channel Enhancement Mode Power MOSFET 11-Aug-2014 Rev.A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES