SSM85T03GH SSC | Alldatasheet

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www.SiliconStandard.com 1 of 5 N-channel Enhancement-mode Power MOSFET Low gate-charge BVDSS 30V Simple drive requirement R DS(ON) 6mΩ Fast switching ID 75A

DESCRIPTION

The SSM85T03GH is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters. The through-hole version, the SSM85T03J in TO-251, is available for low-footprint vertical G D S TO-251 (J) G D S TO-252 (H) G D S mounting. These devices are manufactured with an advanced process, providing improved on-resistance and switching performance. The devices have a maximum junction temperature rating of 175°C for improved thermal margin and reliability. SSM85T03GH,J 5/17/2005 Rev.2.3 ABSOLUTE MAXIMUM RATINGS Symbol Units VDS V VGS V ID @ TC=25°C ID @ TC=100°C IDM A PD @ TC=25°C W/°C EAS Single Pulse Avalanche Energy3 mJ TSTG TJ Symbol Value Unit Rthj-c Thermal Resistance Junction-case Max. 1.4 °C/W Rthj-a Thermal Resistance Junction-ambient Max. 110 °C/W Parameter Rating Drain-Source Voltage 30 Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V 75 A Continuous Drain Current, VGS @ 4.5V 55 A Pulsed Drain Current1 350 Operating Junction Temperature Range -55 to 175 °C Linear Derating Factor 0.7 Storage Temperature Range Total Power Dissipation 107 W -55 to 175 °C THERMAL DATA Parameter ± 20 Pb-free; RoHS compliant.

www.SiliconStandard.com 2 of 5 SSM85T03GH,J 5/17/2005 Rev.2.3 ELECTRICAL CHARACTERISTICS @ Tj = 25°C (unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V ΔBVDSS/ ΔTj Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA - 0.018 -V/°C RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=45A - - 6 mΩ VGS=4.5V, ID=30A - - 10 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=30A - 32 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=175oC) VDS=24V, VGS=0V - - 500 uA IGSS Gate-Source Leakage VGS=- - nA Qg Total Gate Charge2 ID=30A - 33 52 nC Qgs Gate-Source Charge VDS=24V - 7.5 nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 24 nC td(on) Turn-on Delay Time2 VDS=15V - 11.2 - ns tr Rise Time ID=30A - 77 - ns td(off) Turn-off Delay Time RG=3.3Ω , VGS=10V - 35 - ns tf Fall Time RD=0.5Ω -6 7- ns Ciss Input Capacitance VGS=0V - 2700 4200 pF Coss Output Capacitance VDS=25V - 550 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 380 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=45A, VGS=0V - - 1.3 V trr Reverse Recovery Time IS=30A, VGS=0V, - 28 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 10 - nC Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 3.VDD=25V , L=100uH , RG=25Ω , IAS=24A. ±100± 20V ±100

www.SiliconStandard.com 3 of 5 SSM85T03GH,J 5/17/2005 Rev.2.3 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance vs. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage vs. Reverse Diode Junction Temperature 2468 1 0 1 2 V GS , Gate-to-Source Voltage (V) RDS(ON) (mΩ ) I D =20A T C =25°C 0.5 1.5 2.5 -50 25 100 175 T j ,Junction Temperature ( o C) VGS(th) (V) 100 150 200 250 300 0123456 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C V G =4.0V 4.5V 10V 7.0V 6.0V 100 150 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) V G =4.0V 4.5V 10V 7.0V 6.0V T C = 175o C 0.5 1.0 1.5 2.0 -50 25 100 175 T j , Junction Temperature ( o C) Normalized RDS(ON) V G =10V I D =20A V SD , Source-to-Drain Voltage (V) Is (A) T j =25 o CT j =175 o C

www.SiliconStandard.com 4 of 5 SSM85T03GH,J 5/17/2005 Rev.2.3 Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform td(on) tr td(off) tf VDS VGS 10% 90% Q VG 4.5V QGS QGD QG Charge 100 1000 10000 1 6 11 16 21 26 31 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz Ciss Coss Crss 0 1 02 03 04 05 06 07 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =15V V DS =20V V DS =24V I D =30A 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R thjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 100 1000 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T c =25 o C Single Pulse DC 100ms 10ms 1ms

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