SSM7002KGEN

SSM7002KGEN SSC | Alldatasheet

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www.SiliconStandard.com 1 of 5 N-channel Enhancement-mode Power MOSFET BVDSS 60V RDS(ON) 2Ω ID 640mA The SSM7002KGEN acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC ABSOLUTE MAXIMUM RATINGS VDS VGS ID IDM PD W/°C TSTG TJ Symbol Parameter Value Units RΘJA Maximum thermal resistance, junction-ambient 90 °C/W Symbol Parameter Value Units Drain-source voltage 60 V Gate-source voltage Continuous drain current 3, TA = 25°C 640 mA TA = 70°C 500 mA Pulsed drain current 1,2 950 mA Operating junction temperature range -55 to 150 °C Linear derating factor 0.01 Storage temperature range Total power dissipation 3, TA = 25°C 1.38 W -55 to 150 °C THERMAL CHARACTERISTICS ± 20 V Pb-free; RoHS-compliant SOT-23-3 PRODUCT SUMMARY DESCRIPTION Notes: 1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C. 2.Pulse width <300us, duty cycle <2%. 3.Mounted on a square inch of copper pad on FR4 board ; 270°C/W when mounted on the minimum pad area required for soldering. converters and general load-switching circuits. The SSM7002KGEN is supplied in an RoHS-compliant SOT-23-3 package, which is widely used for lower power commercial and industrial surface mount applications. D G S SOT-23-3 SSM7002KGEN 6/16/2006 Rev.3.01 The gate has internal ESD protection.

www.SiliconStandard.com 2 of 5 ELECTRICAL CHARACTERISTICS (at Tj = 25°C, unless otherwise specified) Notes: 1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C. 2.Pulse width <300us, duty cycle <2%. Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-source breakdown voltage V GS=0V, ID=250uA 60 - - V Δ BVDSS/ ΔTj Breakdown voltage temperature coefficient Reference to 25°C, ID=1mA - 0.06 - V/°C RDS(ON) Static drain-source on-resistance V GS=10V, ID=500mA - - 2 Ω VGS=4.5V, ID=200mA - - 4 Ω VGS(th) Gate threshold voltage VDS=VGS, ID=250uA 1 - 2.5 V gfs Forward transconductance V DS=10V, ID=600mA - 0.6 - S IDSS Drain-source leakage current VDS=60V, VGS=0V - - 10 uA VDS=48V ,VGS=0V, Tj = 70°C - - 100 uA IGSS Gate-source leakage current VGS=±20V - - ±30 uA Qg Total gate charge 2 ID=0.6A - 1 1.6 nC Qgs Gate-source charge VDS=50V - 0.5 - nC Qgd Gate-drain ("Miller") charge V GS=4.5V - 0.5 - nC td(on) Turn-on delay time 2 VDS=30V - 12 - ns tr Rise time ID=0.6A - 10 - ns td(off) Turn-off delay time R G=3.3Ω , VGS=10V - 56 - ns tf Fall time R D=52Ω -29 - ns Ciss Input capacitance VGS=0V - 32 50 pF Coss Output capacitance VDS=25V - 8 - pF Crss Reverse transfer capacitance f=1.0MHz - 6 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward voltage 2 IS=1.2A, VGS=0V - - 1.2 V SSM7002KGEN 6/16/2006 Rev.3.01

www.SiliconStandard.com 3 of 5 SSM7002KGEN 6/16/2006 Rev.3.01 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance vs. Junction Temperature Fig 5. Forward Characteristic of f Fig 6. Gate Threshold Voltage vs. Reverse Diode Junction Temperature 0.0 0.2 0.4 0.6 0.8 1.0 0.0 2.0 4.0 6.0 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 10V 7.0V 5.0V 4.5V V G = 3.0 V 0.0 0.2 0.4 0.6 0.8 1.0 0246 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A = 150o C 10V 7.0V 5.0V 4.5V V G = 3.0 V 1.0 1.5 2.0 2.5 3.0 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (mΩ ) I D = 200m A T A =25 o C 0.5 1.0 1.5 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = 500m A V G =10V 0.2 0.4 0.6 0 0.4 0.8 1.2 1.6 V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.5 0.9 1.3 1.7 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) (V)

www.SiliconStandard.com 4 of 5 SSM7002KGEN 6/16/2006 Rev.3.01 Q VG 4.5V QGS QGD QG Charge 0 0.5 1 1.5 2 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D = 600m A V DS =3 0V V DS =40V V DS =50V 100 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.001 0.010 0.100 1.000 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 1ms 10ms 100ms DC 0.0 0.2 0.4 0.6 0.8 1.0 0246 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o CT j =25 o C V DS =5V 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Normalized Thermal Response (Rthja) 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 270°C/W t T Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform

Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expre ss or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. www.SiliconStandard.com 5 of 5 PHYSICAL DIMENSIONS PART MARKING NKXX PART NUMBER CODE: NK = SSM7002KGEN XX = DATE/LOT CODE - contact SSC for PACKING: Moisture sensitivity level MSL3 3000 pcs in antistatic tape on a reel packed in a moisture barrier bag (MBB). *Dimensions do not include mold protrusions. SOT -23-3 MILLIMETERS SYMBOL MIN. MAX. A 0.89 1.45 A1 0 0.15 A2 0.70 1.30 b 0.30 0.50 c 0.08 0.25 D 2.65 3.10 E 2.10 3.00 E1 1.19 2.30 e 0.95BSC e1 1.90BSC L 0.30 0.60 L1 0.60REF Θ 0° 8° SOT-23-3 SSM7002KGEN 6/16/2006 Rev.3.01 information on decoding this. First character is underlined to indicate Pb-free part