SSM6K208FE

SSM6K208FE TOSHIBA | Alldatasheet

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TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K208FE ○ High-Speed Switching Applications ○ Power Management Switch Applications

• 1.8V drive
• Low ON-resistance: R on = 296 mΩ (max) (@VGS = 1.8 V) Ron = 177 mΩ (max) (@VGS = 2.5 V) Ron = 133 mΩ (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage VDSS 30 V Gate-Source voltage VGSS ± 12 V DC I D 1.9 Drain current Pulse I DP 3.8 A Drain power dissipation PD (Note 1) 500 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6mm, Cu Pad: 645 mm 2 ) Unit: mm JEDEC ― JEITA ― TOSHIBA 2-2N1A Weight: 3mg (typ.) ES6 1,2,5,6: Drain 3 : Gate 4 : Source Start of commercial production 2008-01

Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Conditions Min Typ. Max Unit V (BR) DSS ID = 1 mA, VGS = 0 V 30 ⎯ ⎯ Drain-Source breakdown voltage V (BR) DSX ID = 1 mA, VGS = –12 V 18 ⎯ ⎯ V Drain cut-off current IDSS V DS = 30 V, VGS = 0 V ⎯ ⎯ 1 μA Gate leakage current IGSS V GS = ±12 V, VDS = 0 V ⎯ ⎯ ±1 μA Gate threshold voltage Vth V DS = 3 V, ID = 1 mA 0.4 ⎯ 1.0 V Forward transfer admittance ⏐Yfs⏐ V DS = 3 V, ID = 1.0 A (Note 2) 2 3.9 ⎯ S ID = 1.0 A, VGS = 4 V (Note 2) ⎯ 103 133 ID = 0.8 A, VGS = 2.5 V (Note 2) ⎯ 125 177 Drain–source ON-resistance RDS (ON) ID = 0.5 A, VGS = 1.8 V (Note 2) ⎯ 165 296 mΩ Input capacitance Ciss ⎯ 123 ⎯ Output capacitance Coss ⎯ 43 ⎯ Reverse transfer capacitance Crss VDS = 15 V, VGS = 0 V, f = 1 MHz ⎯ 18 ⎯ pF Total Gate Charge Qg ⎯ 1.9 ⎯ Gate-Source Charge Qgs ⎯ 1.1 ⎯ Gate-Drain Charge Qgd VDS = 15V, ID = 1.9 A, VGS = 4 V ⎯ 0.8 ⎯ nC Turn-on time t on ⎯ 9.2 ⎯ Switching time Turn-off time t off VDD = 15 V, ID = 1.0 A, VGS = 0 to 2.5 V, RG = 4.7 Ω ⎯ 6.4 ⎯ ns Drain-Source forward voltage VDSF I D = –1.9 A, VGS = 0 V (Note 2) ⎯ –0.83 –1.2 V Note 2: Pulse test

Switching Time Test Circuit Marking Equivalent Circuit (top view) Usage Considerations Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (1 mA for the SSM6K208FE). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2.5 V ton t off (b) VIN (c) VOUT 0 V VDD VDS (ON) tr t f 10% 90% 90% 10% (a) Test Circuit VDD = 15 V RG = 4.7 Ω Duty ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C 2.5 V IN OUT VDD 10 μs RG NV 1 2 3 5 4 123

Ambient temperature Ta (°C) Ambient temperature Ta (°C) RDS (ON) – ID Drain–source voltage V DS (V) ID – VDS Drain current I D (A) 0 0.2 0.4 0.6 VGS = 1.2 V 10 V Common Source Ta = 25 °C 4.0 V 1.8 V Gate–source voltage V GS ( V ) ID – VGS Drain current I D (A) 0.1 0.001 0.01 0.0001 2.0 − 25 °C Ta = 100 °C 25 °C 1.0 Vth – Ta Gate threshold voltage V th (V) 1.0 −50 0 150 50 100 RDS (ON) – Ta Drain–source ON-resistance RDS (ON) ( m Ω) −50 0 50 150 200 100 400 Drain–source ON-resistance RDS (ON) ( m Ω) Gate–source voltage V GS ( V ) RDS (ON) – VGS 400 200 − 25 °C Ta = 100 °C 25 °C ID =1.0A Common Source Common Source VDS = 3 V VGS = 4.0V Drain current I D (A) Drain–source ON-resistance RDS (ON) ( m Ω) 0 1 2 3 400 200 2.5 V Common Source Ta = 25°C 0.5 Common Source VDS = 3 V ID = 1 mA Common Source 0.8 1.0 2.5 V ID = 0.5 A / VGS = 1.8 V 0.8 A / 2.5 V 300 100 300 100 300 100 1.5 V 1.8 V 1.0 A / 4.0 V 2 6 10

Drain current I D (A) Forward transfer admittance ⎪Yfs⎪ (S) |Yfs| – ID 0.1 0.1 1 0.3 0.01 Drain–source voltage V DS (V) C – VDS Capacitance C (pF) 0.1 1 10 100 100

5 Common Source

Ta = 25°C f = 1 MHz VGS = 0 V Drain current I D (A) Switching time t (ns) t – ID 0.01 100 0.1 1000 1 10 tf ton tr Common Source VDD = 15 V VGS = 0 ∼ 2.5 V Ta = 25 °C RG = 4.7 Ω Drain reverse current I DR (A) Drain–source voltage V DS (V) IDR – VDS 0.1 0.001 0.01 –0.5 –1.0 −25 °C Ta =100 °C 25 °C –1.5 Common Source VGS = 0 V G D S IDR toff Ciss Coss Crss 500 300 1000 Common Source VDS = 3 V Ta = 25°C Total Gate Charge Qg (nC) Dynamic Input Characteristic Gate–Source voltage V GS ( V ) 0 0 VDD = 15 V VDD = 24 V 4 1 3 Common Source ID = 1.9 A Ta = 25°C

Ambient temperature Ta (°C) PD – Ta Drain power dissipation PD (mW) 800 200 120 100 140 400 600 160 1000 80 60 40 20 0 -20 -40 Mounted on FR4 board Cu Pad : 645 mm2) Pulse width t w (s) Rth – tw Transient thermal impedance Rth (°C/W) 0.001 10000.01 0.1 1 100 100 1000 Single Pulse Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm

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