SSM6K07FU

SSM6K07FU VBSEMI | Alldatasheet

Document overview

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Technical content

FEATURES

• Halogen-free According to IEC 61249-2-21 Defi nition  TrenchFET ® Power MOSFET  Low On-R esistance  100 % Rg Tested  Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

 DC/DC Converters, High Speed Switching Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. Maximum under steady state conditions is 166 °C/W. e. Package limited. PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a, e Qg (Typ.) 0.023 at VGS = 10 V 4.5 4.2 nC 0.027 at VGS = 4.5 V 4.0 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise not ed) Parameter Symbol L imit Unit Drain-Source Voltage VDS 30 VGate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 4.5e A TC = 70 °C 4.0e TA = 25 °C 4.1b, c TA = 70 °C 3.6b, c Pulsed Drain Current (t = 300 µs) IDM 25 Continuous Source-Drain Diode Current TC = 25 °C IS 2.1 TA = 25 °C 1.1b, c Maximum Power Dis sipation TC = 25 °C PD 2.5 WTC = 70 °C 1.6 TA = 25 °C 1.3b, c TA = 70 °C 0.8b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature) 26 THERMAL RESISTANCE RATINGS Parameter Sy mbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t  5 s R thJA 75 100 °C/W Maximum Junction-to-Foot (Dr ain) Steady State R thJF 40 50 N-Channel 30 V (D-S) MOSFET SOT-363 SC-70 (6-LEADS) Top View D D G D D S www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 SSM6K07FU A ll data sheet.com

Notes: a. Pulse test; pulse w idth  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Ab solute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, un less otherwise noted) Parameter Symbol Test Conditio ns Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V VDS Temperature Coefficient VDS/TJ ID = 250 µA 30 mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ - 4.8 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 0.5 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 µAVDS = 30 V, VGS = 0 V, TJ = 70 °C 10 On-State Drain Currenta ID(on) VDS 5 V, VGS = 10 V 20 A Drain-Source On-State Resistancea RDS(on) VGS 10 V, ID = 3.5 A 0.023 VGS 4.5 V, ID = 3 A 0.027 Forward Transconductancea gfs VDS = 15 V, ID = 3.5 A 24 S Dynamicb Input Capacitance Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz 424 pFOutput Capacitance Coss 100 Reverse Transfer Capacitance Crss 42 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 3.5 A 8.2 13 nC VDS = 15 V, VGS = 4.5 V, ID = 3.5 A 4.2 7 Gate-Source Charge Qgs 1.4 Gate-Drain Charge Qgd 1.4 Gate Resistance Rg f = 1 MHz 2.5 12.6 25.2  Tur n-O n Delay Time td(on) VDD = 15 V, RL = 3.4  ID  4.4 A, VGEN = 4.5 V, Rg = 1  61 2 ns Rise Time tr 20 30 Turn-Off Delay Ti me td(off) 14 21 Fall Time tf 10 20 Tur n-On D elay Time td(on) VDD = 15 V, RL = 3.4  ID  4.4 A, VGEN = 10 V, Rg = 1  Rise Time tr 11 20 Turn-Off Delay Time td(off) 20 30 Fall Time tf 71 4 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 2.1 A Pulse Diode Forward C urrent ISM 25 Body Diode Voltage VSD IS = 4.4 A, VGS 0 V 0.82 1.2 V Body Diode Reverse Recove ry Time trr IF = 4.4 A, dI/dt = 100 A/µs, TJ = 25 °C 13 20 ns Body Diode Reverse Recovery Charge Qrr 61 2 n C Reverse Recov ery Fall Time ta 8 ns Reverse Recovery Rise T ime tb 5 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 SSM6K07FU A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, un less otherwise noted) Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gat e Charge 00 .511 .52 ID - Drain Curr ent (A) VDS - Drain-to-Source Voltage (V) VGS = 10 V thru 4 V VGS = 3 V 0.016 0.020 0.024 0.028 0.032 0 5 10 15 20 25 RDS(on) - On-Resistance (Ω) ID -D r a i n C u r r e n t ( A ) VGS = 4.5 V VGS = 10 V 02468 1 0 VGS - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VDS = 24 V VDS = 15 V VDS = 8 V ID = 3.5 A Transfer Characteristics Capacitance On-R esistance vs. Junction Temperature 00 . 511 . 5 22 . 53 ID - Drain Current (A) VGS - Gate-to-Source Vol tage (V) TC = 25 °C TC = 125 °C TC = - 55 °C 150 300 450 600 0 6 12 18 24 30 C - Capacitance (pF) VDS - Drain-to-Source Voltage (V) Ciss Coss Crss 0.7 0.9 1.1 1.3 1.5 1.7 - 5 0 - 2 50 2 55 07 5 1 0 0 1 2 5 1 5 0 RDS(on) -O n - R e s is t a n c e(Normalized) TJ - Junction Temperature (°C) ID = 3.5 A VGS = 10 V, ID = 3.5 A VGS = 4.5 V, ID = 3 A www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 SSM6K07FU A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless oth erwise noted) Source-Drain Diode Forward Vo ltage Threshold Voltage 0.1 IS - Source Current (A) VSD - Source-to-Drain Vol tage (V) TJ = 150 °C TJ = 25 °C 1.0 1.2 1.4 1.6 1.8 2.0 - 5 0 - 2 50 2 55 07 5 1 0 0 1 2 5 1 5 0 VGS(th) (V) TJ -T e m p e r at u r e (°C) ID = 250 μA On-Resistance vs. Gate-to-Source Voltage Single Pulse Po wer (Junction-to-Ambient) 0.015 0.030 0.045 0.060 2468 1 0 RDS(on) - On-Resistance (Ω) VGS - Gate-to-Source Voltage (V) TJ = 125 °C TJ = 25 °C ID = 5.5 A 0.01 0.1 1 10 100 1000 Time (s) Power (W) TA = 25 °C Safe Operating Area, Junction-to-A mbient 0.01 0.1 100 0.1 1 10 100 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 ms Limited by RDS(on)* 1 ms TC = 25 °C Single Pulse BVDSS Limited 10 ms 100 μs 10 s, 1 s DC www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 SSM6K07FU A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, un less otherwise noted) * The power dissipation P D is based on T J(max.) = 150 °C, using junction-to-cas e thermal resistance, and is mo re useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 25 50 75 100 125 150 ID - Drain Current (A) TC - Case Temperature (°C) Power Derating, Junction -to-Foot 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power (W) Power Derating, Junction -to-Ambient 0.0 0.2 0.4 0.6 0.8 1.0 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power (W) www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 SSM6K07FU A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless oth erwise noted) Normalized Thermal Transient Impe dance, Junction-to-Ambient 10-3 10-2 1 10 100010-110-4 100 0.2 0.1 Square WaveP ulse Duration (s) Normalized Effective T ransient Thermal Impedance 0.1 0.01 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA =1 6 6 ° C /W 3. TJM -T A =P DMZthJA(t) 4. Surface Mounted Duty Cycle = 0. Single Pulse 0.02 0.05 Normalized Thermal Tran sient Impedance, Junction-to-Foot 10-3 10-2 10110-110-4 0.2 0.1 Duty Cycle = 0. Square WaveP ulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 0.05 Single Pulse 0.02 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 SSM6K07FU A ll data sheet.com

L c EE1 e D A2 A -A- b -B- 654 /C0083/C0067/C0262/C0055/C0048/C0058/C0032/C0032/C0032/C0054/C0262/C0076/C0069/C0065/C0068/C0083 /C0077/C0073/C0076/C0076/C0073/C0077/C0069/C0084/C0069/C0082/C0083/C0073/C0078/C0067/C0072/C0069/C0083 Dim Min Nom Max Min Nom Max A 0.90 – 1.10 0.035 – 0.043 A 2 0.80 – 1.00 0.031 – 0.039 b 0.15 – 0.30 0.006 – 0.012 c 0.10 – 0.25 0.004 – 0.010 e 0.65BSC 0.026BSC 7/C0095Nom 7/C0095Nom ECN: S-03946—Rev. B, 09-Jul-01 DWG: 5550 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 SSM6K07FU A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 SSM6K07FU A ll data sheet.com