SSM6J53FE

SSM6J53FE TOSHIBA | Alldatasheet

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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6J53FE ○ High-Speed Switching Applications ○ Power Management Switch Applications

• 1.5 V drive
• Suitable for high-density mounting due to compact package
• Low on-resistance : R on = 136 mΩ (max) (@VGS = -2.5 V) : Ron = 204 mΩ (max) (@VGS = -1.8 V) : Ron = 364 mΩ (max) (@VGS = -1.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS -20 V Gate-Source voltage VGSS ± 8 V DC I D -1.8 Drain current Pulse I DP -3.6 A Drain power dissipation P D (Note 1) 500 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2) Electrical Characteristics (Ta = 2 5 ° C ) Characteristics Symbol Test Condition Min Typ. Max Unit V (BR) DSS ID = −1 mA, VGS = 0 −20 ⎯ ⎯ Drain-Source breakdown voltage V (BR) DSX ID = −1 mA, VGS = +8 V −12 ⎯ ⎯ V Drain cut-off current IDSS V DS = −20 V, VGS = 0 ⎯ ⎯ −10 μA Gate leakage current IGSS V GS = ± 8 V, VDS = 0 ⎯ ⎯ ±1 μA Gate threshold voltage Vth V DS = −3 V, ID = −1 mA −0.3 ⎯ −1.0 V Forward transfer admittance |Yfs| V DS = −3 V, ID = −0.9 A (Note 2) 2.7 5.4 ⎯ S ID = −1.0 A, VGS = −2.5 V (Note 2) ⎯ 95 136 ID = −1.0 A, VGS = −1.8 V (Note 2) ⎯ 122 204 Drain-Source on-resistance RDS (ON) ID = −0.1 A, VGS = −1.5 V (Note 2) ⎯ 137 364 mΩ Input capacitance Ciss ⎯ 568 ⎯ Output capacitance Coss ⎯ 75 ⎯ Reverse transfer capacitance Crss VDS = −10 V, VGS = 0 f = 1 MHz ⎯ 67 ⎯ pF Turn-on time ton ⎯ 29 ⎯ Switching time Turn-off time t off VDD = −10 V, ID = −0.9 A ns Total gate charge Qg ⎯ 10.6 ⎯ Gate-Source charge Qgs ⎯ 7.4 ⎯ Gate-Drain charge Qgd VDS = −16 V, IDS = -1.8 A, VGS = − 4 V ⎯ 3.3 ⎯ nC Drain-Source forward voltage VDSF ID = 1.8 A, VGS = 0 (Note 2) ⎯ 0.8 1.2 V Unit : mm ES6 JEDEC ⎯ JEITA ⎯ TOSHIBA 2-2N1A Weight: 7.0 mg (typ.) Note 2: Pulse test 0.2±0.05 1.2±0.05 1.6±0.05 1.0±0.05 0.50.5 1.6±0.05 0.12±0.05 0.55±0.05 1,2,5,6 :Drain 3 :Gate 4 :Source

Switching Time Test Circuit (a) Test Circuit (b) VIN Marking Equivalent Circuit (top view) Precaution Vth can be expressed as the voltage between the gate and source when the low operating current value is ID = -1mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Be sure to take this into consideration when using the device. Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. KG 1 2 3 5 4 123 6 5 (c) VOUT VDD = -10 V RG = 4.7 Ω D.U. < = 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C IN 0 −2.5V 10 μs VDD OUT RG RL ton 90% 10% −2.5 V 0 V 90% 10% toff tr tf VDS (ON) VDD

Drain - Source voltage V DS (V) ID – VDS Drain current I D (A) -1.5 0 -0.5 -1 -1.5 -2 -0.5 -3.5 Gate - Source voltage V GS (V) ID – VGS Drain current I D ( m A ) -10000 -0.01 -100 -1000 -10 -0.1 -1.6 -0.2 -0.6 −25 °C Common Source VDS = -3 V Ta = 85 °C 25 °C -0.4 Drain – Source on-resistance RDS (ON) ( m Ω) Gate - Source voltage V GS (V) RDS (ON) – VGS 0 -2 -4 -6 -8 100 200 300 400 ID = -0.1 A Common Source Ambient temperature Ta (°C) RDS (ON) – Ta Drain – Source on-resistance RDS (ON) ( m Ω) Common Source 500 −50 ID = -0.1 A / VGS = -1.5 V 0 50 150 100 200 300 400 100 Drain current I D (A) RDS (ON) – ID Drain – Source on-resistance RDS (ON) ( m Ω) 400 100 -6 -8 150 250 350 Common Source Ta = 25 °C VGS = -1.5 V Common Source Ta = 25°C VGS = -1.2 V -1.5 V -1.8 V -4 V -2.5 V -1.8 V Gate - Source voltage V GS (V) Drain – Source on-resistance RDS (ON) ( m Ω) 0 -1 -3 -4 100 200 300 400 RDS (ON) – VGS 25 °C Ta = 85 °C −25 °C -1.0 A / -2.5 V -1.0 A / -1.8 V -2.5 -2.5 V ID = -1.0 A Common Source Ta = 85 °C 25 °C −25 °C 200 300 450

Switching time t (ns) Drain current I D (A) t – ID 0.01 100 0.1 1000 1 10 Common Source VDD = -10 V VGS = 0 ∼ -2.5 V Ta = 25 °C RG = 4.7 Ω toff tf ton tr Drain reverse current I DR (A) Drain-Source voltage V DS (V) IDR – VDS -0.5 -1.5 Common Source VGS = 0 V Ta = 25 °C G D S IDR Ambient temperature Ta (°C) Vth – Ta Gate threshold voltage V th (V) -0.8 −25 0 25 150 -0.2 -0.4 -0.6 -0.7 50 75 100 125 Common Source VDS = -3 V ID = -1 mA Drain current I D ( m A ) Forward transfer admittance ⎪Yfs⎪ (S) |Yfs| – ID Common Source VDS = -3 V Ta = 25 °C 0.01 -100001 0.1 -10 -100 -1000 0.03 0.3 Drain – Source voltage V DS (V) C – VDS Capacitance C (pF) -0.1 -1 -10 -100 100 1000 5000 3000 300 500 Common Source Ta = 25 °C f = 1 MHz VGS = 0 V Ciss Coss Crss Total gate charge Q g ( n C ) Dynamic Input Characteristic Gate-Source voltage V GS ( V ) 0 0 25 51 01 5 -10 Common Source ID = -1.8 A Ta = 25 °C -6 VDD = -16 V -0.5 -0.1 -0.3

Pulse width t w (s) rth – tw Transient thermal impedance r th (°C /W) 0.001 1000 0.01 0.1 1 100 100 1000 Single Pulse Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2) Drain power dissipation P D ( m W ) Ambient temperature Ta (°C) PD – Ta 200 0 100 50 600 500 Mounted on FR4 board Cu Pad: 645 mm2) 300 100 400 150 Drain-Source voltage V DS (V) Safe operating area Drain current I D (A) * Single Non-repetitive Pulse Ta = 25°C Curves must be derated linearly with increase in temperature. DC operation Ta = 25°C 1 ms* ID max (Pulsed) * -0.001 -0.1 -0.01 -0.1 -10 -1 -10 -100 10 ms* 10s* ID max (Continuous) Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t Cu pad: 645 mm2 ) -30 -3 -0.3 -0.4 -0.03 -0.003

RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL

• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
• The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringement s of patents or other rights of the third parties which may result from its use. No license is granted by implic ation or otherwise under any patents or other rights of TOSHIBA or the third parties.
• Please contact your sales representative for product- by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.