SSM6J402TU

SSM6J402TU TOSHIBA | Alldatasheet

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TOSHIBA Field-Effect Transistor Silicon P-Chan nel MOS Type SSM6J402TU ○ DC/DC Converter Application ○ High-Speed Switching Applications

• 4.0 V drive
• Low ON-resistance : R DS(ON) = 225mΩ max (@VGS = −4 V) : RDS(ON) = 117mΩ max (@VGS = −10 V) Absolute Maximum Ratings (Ta = 25˚C) Characteristic Symbol Rating Unit Drain–source voltage VDSS −30 V Gate–source voltage VGSS ±20 V DC I D −2.0 Drain current Pulse I DP −4.0 A Drain power dissipation PD(注 1) 500 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2) Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit V (BR) DSS ID = −1 mA, VGS = 0 V −30 ⎯ ⎯ Drain–source breakdown voltage V (BR) DSX ID = −1 mA, VGS = 20 V −15 ⎯ ⎯ V Drain cutoff current IDSS V DS = −30 V, VGS = 0 V ⎯ ⎯ −1 μA Gate leakage current IGSS V GS = ±16 V, VDS = 0 V ⎯ ⎯ ±1 μA Gate threshold voltage Vth V DS = −5 V, ID = −1 mA −1.2 ⎯ −2.6 V Forward transfer admittance |Yfs| V DS = −5 V, ID = −1 A (Note2) 1.6 3.1 ⎯ S ID = −1 A, VGS = −10 V (Note2) ⎯ 80 117 Drain–source ON-resistance RDS (ON) ID = −0.5 A, VGS = −4 V (Note2) ⎯ 160 225 mΩ Input capacitance Ciss ⎯ 280 ⎯ Output capacitance Coss ⎯ 80 ⎯ Reverse transfer capacitance Crss VDS = −15 V, VGS = 0 V, f = 1 MHz ⎯ 45 ⎯ pF Total Gate Charge Qg ⎯ 5.3 ⎯ Gate-Source Charge Qgs ⎯ 4.1 ⎯ Gate-Drain Charge Qgd VDS = −15V, ID = −2.0 A VGS = −10 V ⎯ 1.2 ⎯ nC Turn-on time ton ⎯ 16 ⎯ Switching time Turn-off time toff VDD = −15 V, ID = −1 A VGS = 0 to −4 V, RG = 10 Ω ⎯ 35 ⎯ ns Drain–source forward voltage VDSF I D = 2 A, VGS = 0 V ( N o t e 2 ) ⎯ 0.8 1.2 V Note 2: Pulse test unit: mm 0.3-0.05 1.7±0.1 2.1±0.1 1.3±0.1 0.650.65 2.0±0.1 5 0.7±0.05 +0.10.166±0.05 JEDEC ― JEITA ― TOSHIBA 2-2T1D Weight: 7.0 mg (typ.) UF6 Start of commercial production 2008-01

Switching Time Test Circuit M a r k i n g E q u i v a l e n t C i r c u i t (top view) Notice on Usage Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. ton toff (b) VIN (c) VOUT 0 V −4 V VDD VDS (ON) tr tf 10% 90% 90% 10% (a) Test Circuit VDD = −15 V RG = 10 Ω Duty ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C −4 V IN OUT VDD 10 μs RG 6 4 1 2 3 KPE 123

Drain–source voltage V DS (V) ID – VDS Drain current I D (A) VGS = -3.3V -3.6V -10 V Common Source Ta = 25 °C -4 V -6V -0.8 ID = -1 A Common Source Ambient temperature Ta (°C) RDS (ON) – Ta Drain–source ON-resistance RDS (ON) ( m Ω) Common Source 500 −50 ID = -0.5A / VGS = -4.0 V 0 50 150 100 200 300 400 100 Drain current I D (A) RDS (ON) – ID Drain–source ON-resistance RDS (ON) ( m Ω) 400 100 -2 -3 -6 -8 VGS = -4.0V Gate–source voltage V GS ( V ) Drain–source ON-resistance RDS (ON) ( m Ω) 0 -2 -4 -4 100 200 300 400 RDS (ON) – VGS 25 °C Ta =100 °C −25 °C 200 300 -10V -1.0A / -10V 500 -10 Common Source Ta = 25°C 500 Gate–source voltage V GS ( V ) ID – VGS Drain current I D (A) -10 -0.1 -0.001 -0.01 -0.0001 -4.0 -0.5 -1.5 −25 °C Ta = 100 °C 25 °C Common Source VDS = -5 V Ambient temperature Ta (°C) Vth – Ta Gate threshold voltage V th (V) -2.0 −50 0 150 -0.5 -1.0 -1.5 50 100 Common Source VDS = -5 V ID = -1 mA

Drain reverse current I DR (A) Drain–source voltage V DS (V) IDR – VDS Drain current I D (A) Forward transfer admittance ⎪Yfs⎪ (S) |Yfs| – ID 0.1 -10 -0.1 -1 0.3 -0.01 Common Source VDS = -5 V Ta = 25 °C Drain–source voltage V DS (V) C – VDS Capacitance C (pF) -0.1 -1 -10 -100 100 1000 300 500 Switching time t (ns) Drain current I D (A) t – ID 0.01 100 0.1 600 1 10 Common Source VDD = -15 V VGS = 0 ∼ -4 V Ta = 25 °C RG = 10 Ω toff tf ton tr 0.1 0.001 0.01 0.0001 −25 °C Ta = 100 °C 25 °C Total Gate Charge Qg (nC) Dynamic Input Characteristic Gate–source voltage V GS ( V ) VDD=-15V 4 8 Common Source ID = -2.0 A Ta = 25°C VDD=-24V 6 2 Common Source Ta = 25°C f = 1 MHz VGS = 0 V Ciss Coss Crss Common Source VGS = 0 V G D S IDR

Ambient temperature Ta (°C) PD – Ta Drain power dissipation PD (mW) 800 200 120 100 140 400 600 160 1000 80 60 40 20 0 -20 -40 Mounted on FR4 board Cu Pad : 645 mm2) t = 10 s DC Pulse width t w (s) rth – tw Transient thermal impedance rth (°C/W) 0.001 10000.01 0.1 1 100 100 100 Single Pulse Mounted on FR4 board (25.4mm × 25.4mm × 1.6t , Cu Pad : 645 mm2)

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