SSM6J23FE TOSHIBA | Alldatasheet

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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ) SSM6J23FE High Current Switching Applications DC-DC Converter

  • Suitable for high-density mounting due to compact package
  • Low on-resistance: R on = 160 mΩ (max) (@VGS = -4.0 V) R on = 210 mΩ (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS -12 V Gate-Source voltage VGSS ±8 V DC I D -1.2 Drain current Pulse I DP -4.8 A Drain power dissipation PD (Note 1) 500 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm 2 ) M a r k i n g E q u i v a l e n t C i r c u i t Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic discharge. Operators should wear anti-static clothing and use containers and other objects that are made of anti-static materials. Unit: mm 1,2,5,6 : Drain 3 : Gate 4 : S o u r c e JEDEC - JEITA - TOSHIBA 2-2N1A Weight: 3 mg (typ.) KE 1 2 3 5 4 123 6 5

Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS V GS = ±8 V, VDS = 0 − − ±1 μA V (BR) DSS ID = -1 mA, VGS = 0 -12 − − Drain-Source breakdown voltage V (BR) DSX ID = -1 mA, VGS = +8 V -4 − − V Drain cut-off current IDSS V DS = -12 V, VGS = 0 − − -1 μA Gate threshold voltage Vth V DS = -3 V, ID =-0.1 mA -0.5 − -1.1 V Forward transfer admittance ⏐Yfs⏐ V DS = -3 V, ID = -0.6A (Note2) 1.75 3.5 − S ID = -0.6 A, VGS = -4 V (Note2) − 110 160 Drain-Source on-resistance RDS (ON) ID = -0.6 A, VGS = -2.5 V (Note2) − 145 210 mΩ Input capacitance Ciss V DS = -10 V, VGS = 0, f = 1 MHz − 420 − pF Reverse transfer capacitance Crss V DS = -10 V, VGS = 0, f = 1 MHz − 75 − pF Output capacitance Coss V DS = -10 V, VGS = 0, f = 1 MHz − 93 − pF Turn-on time ton − 23 − Switching time Turn-off time t off VDD = −10 V, ID = −0.6A ns Note2: Pulse test Switching Time Test Circuit (a) Test Circuit (b) VIN Precaution Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 100 μA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on)) Please take this into consideration when using the device. (c) VOUT VDD = -10 V RG = 4.7 Ω D.U. < = 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C VDD out in 0 −2.5 V 10 μs RG ID tf ton 90% 10% 0 V −2.5 V 90% 10% toff tr VDS (ON) VDD

-3.5 -2.5 -1.5 -0.5 -2-1.5-1-0.50 Drain-Source voltage V DS (V) Drain current I D (mA) Common Source Ta=25℃ VGS=-1.8V -2.0V -2.5V -4.0V ID - V GS 0.01 0.1 100 1000 10000 -2.5-2-1.5-1-0.50 Gate-Source voltage V GS (V) Drain current I D (mA) Common Source VDS=-3V Ta=85℃ -25℃ 25℃ RDS(ON) - ID 100 200 300 Drain current I D (A) Drain-Source on-resistance RDS(ON) (mΩ) VGS=-4.0V -2.5V Common Source Ta=25℃ RDS(ON) - VGS 0.1 0.2 0.3 0.4 0.5 -8-6-4-20 Gate-Source Voltage V GS(V) Drain-Source on-resistance RDS(ON) (Ω) Common Source ID=-0.6A Ta=85℃ 25℃ -25℃ RDS(ON) - Ta 100 200 300 -25 0 25 50 75 100 125 150 Ambient temperture Ta (℃) Drain-Source on-resistance RDS(ON) (Ω) -4.0V VGS=-2.5V Common Source ID=-0.6A Vth - Ta -1.8 -1.6 -1.4 -1.2 -0.8 -0.6 -0.4 -0.2 -25 0 25 50 75 100 125 150 Ambient temperture Ta (℃) Gate threshold voltage Vth(V) Common Source ID=-0.1mA VDS=-3V

|Yfs| - I D 0.01 0.1 100 0.001 0.01 0.1 1 10 Drain Current I D (A) Forward transfer admittance |Yfs| (mS) Commonm Source VDS=-3V Ta=25℃ -- - -- C - V DS 100 1000 0.1 1 10 100 Drain-Source voltage V DS (V) Capacitance C (pF) Common Source VGS=0V f=1MHz Ta=25℃ Ciss Coss Crss - - - - IDR - V DS -1.5 -0.5 0 0.2 0.4 0.6 0.8 1 Drain-Source voltage V DS (V) Drain reverse current I DR (A) Common Source VGS=0 Ta=25℃ IDR D G S t - I D 0.1 100 1000 0.01 0.1 1 10 Drain curren I D (A) Switching time t (ns) Common Source VDD=-10V VGS=0～-2.5V Ta=25℃ toff tf ton tr - -- - Dynamic Input Characteristic -10 0123456789 1 0 Tatal gate charge Q g (nC) Gate-Source voltage V GS (V) Common Source VDD=-10V ID=1.2A Ta=25℃ Safe operating area 0.001 0.01 0.1 0.1 1 10 100 Drain-Source current V DS (V) Drain current I D (A) DC operation Ta=25℃ IDmax (Continuous) IDmax (Pulsed) * 1ms 10ms 100ms Mounted on FR4 board (25.4 mm ・ 25.4 mm ・ 1.6 t , Cu pad: 645 mm2 ) *:Single nonrepetive Pulse Ta ・ 25°C Curves must be derated linealy with increase in temperture. - - - -

0 20 40 60 80 100 120 140 160 Ambient temperature Ta (℃) Drain power dissipation P D (mW) Mounted on FR4 board Cu Pad: 645 mm2） Pulse width t w ( s ) rth – tw (MOSFET) Transient thermal impedance r th (°C/W ) 0.001 1000 0.01 0.1 1 100 100 1000 Single pulse Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm

RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL

  • The information contained herein is subject to change without notice.
  • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
  • The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
  • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.
  • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringement s of patents or other rights of the third parties which may result from its use. No license is granted by implic ation or otherwise under any patents or other rights of TOSHIBA or the third parties.
  • Please contact your sales representative for product- by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.