SSM6J08FU

SSM6J08FU_07 TOSHIBA | Alldatasheet

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TOSHIBA Field Effect Transistor Silicon P Chann el MOS Type (U-MOSII) SSM6J08FU Power Management Switch DC-DC Converter

• Small Package
• Low on Resistance : R on = 0.18 Ω (max) (@VGS = −4 V) : Ron = 0.26 Ω (max) (@VGS = −2.5 V)
• Low Gate Threshold Voltage Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS −20 V Gate-Source voltage VGSS ±12 V DC I D −1.3 Drain current Pulse I DP (Note 2) −2.6 A Drain power dissipation P D (Note 1) 300 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm 2 × 6) Fig: 1. Note 2: The pulse width limited by max channel temperature. Marking Equivalent Circuit Fig 1: 25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm 2 × 6 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-2J1D Weight: 6.8 mg (typ.) 0.4 mm 0.8 mm K D D 1 2 3 5 4 1 2 3 6 5

Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS V GS = ±12 V, VDS = 0 ⎯ ⎯ ±1 μA V (BR) DSS ID = −1 mA, VGS = 0 −20 ⎯ ⎯ Drain-Source breakdown voltage V (BR) DSX ID = −1 mA, VGS = 12 V −8 ⎯ ⎯ V Drain Cut-off current IDSS V DS = −20 V, VGS = 0 ⎯ ⎯ −1 μA Gate threshold voltage Vth V DS = −3 V, ID = −0.1 mA −0.5 ⎯ − 1.1 V Forward transfer admittance ⏐Yfs⏐ V DS = −3 V, ID = −0.65 A (Note 3) 1.3 2.7 ⎯ S ID = −0.65 A, VGS = −4 V (Note 3) ⎯ 140 180 ID = −0.65 A, VGS = −2.5 V (Note 3) ⎯ 200 260Drain-Source ON resistance RDS (ON) ID = −0.65 A, VGS = −2.0 V (Note 3) ⎯ 260 460 mΩ Input capacitance Ciss V DS = −10 V, VGS = 0, f = 1 MHz ⎯ 370 ⎯ pF Reverse transfer capacitance Crss V DS = −10 V, VGS = 0, f = 1 MHz ⎯ 73 ⎯ pF Output capacitance Coss V DS = −10 V, VGS = 0, f = 1 MHz ⎯ 116 ⎯ pF Turn-on time ton ⎯ 33 ⎯ ns Switching time Turn-off time t off VDD = −10 V, ID = −0.65 A, VGS = 0~−2.5 V, RG = 4.7 Ω ⎯ 47 ⎯ ns Note 3: Pulse test Switching Time Test Circuit Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = −100 μA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (relationship can be established as follows: VGS (off) < Vth < VGS (on)) Please take this into consideration for using the device. (c) VOUT tf ton 90% 10% 0 V −2.5 V 90% 10% toff tr VDS (ON) VDD (b) VIN VDD = −10 V RG = 4.7 Ω D.U. < = 1% VIN: tr, tf < 5 ns COMMON SOURCE Ta = 25°C VDD OUT IN 0 −2.5 V 10 μs RG ID (a) Test circuit

Drain-Source on resistance RDS (ON) ( Ω) Drain-Source on resistance RDS (ON) ( Ω) Drain-Source voltage V DS (V) ID – VDS Drain current I D (A) Gate-Source voltage V GS (V) ID – VGS Drain current I D ( m A ) Drain current I D (A) RDS (ON) – ID Drain-Source on resistance RDS (ON) ( Ω) Gate-Source voltage V GS (V) RDS (ON) – VGS Ambient temperature Ta (°C) RDS (ON) – Ta Drain current I D (A) |Yfs| – ID Forward transfer admittance | Yfs| (S) −0.5 −1.0 −1.5 −2.0 −2.5 −3.0 −10 VGS = −1.4 V −4.0 −2.5 −2.0 −1.8 −1.6 Common Source Ta = 25°C −0.01 −0.1 −10 −100 −1000 −10000 Ta = 25°C −25°C Common Source VDS = −3 V 100°C 0.2 0.4 0.6 0.8 1.0 Common Source Ta = 25°C −2.5 VGS = −2 V 0.2 0.4 0.6 0.8 1.0 Common Source ID = −0.65 A Ta = 25°C 0.01 −0.01 −0.1 −1 −10 0.1 Common Source VDS = −3 V Ta = 25°C −25 0 25 50 75 100 125 150 0.1 0.2 0.3 0.4 0.5 Common Source ID = −0.65 A VGS = −2 V −2.5

Gate-Source voltage V GS (V) Drain reverse current I DR (A) Ambient temperature Ta (°C) Vth – Ta Gate threshold voltage V th (V) Drain-Source voltage V DS (V) C – VDS Capacitance C (pF) Drain current I D (A) t – ID Switching time t (ns) Drain-Source voltage V DS (V) IDR – VDS Total gate charge Q g (nC) Dynamic Input Characteristic Drain-Source voltage V DS (V) Safe operating area Drain current I D (A) −25 0 25 50 75 100 125 150 −0.2 −0.4 −0.6 −0.8 −1.0 Common Source VDS = −3 V ID = −0.1 mA 100 200 300 400 500 600 Common Source VGS = 0 f = 1 MHz Ta = 25°C Ciss Coss Crss 0 0.5 1 −0.5 −1.0 −1.5 −2.0 Common Source VGS = 0 Ta = 25°C G D S IDR −0.01 −0.1 −1 −10 100 1000 toff tf ton tr Common Source VDD = −10 V VGS = 0~−2.5 V Ta = 25°C RG = 4.7 Ω 0 2 4 6 8 −10 VDD = −16 V −10 V Common Source ID = −1.3 A Ta = 25°C −0.01 −0.1 −1 −10 −100 −0.1 −10 DC operation Ta = 25°C ID max (pulsed) VDSS max 10 ms* 100 ms* Mounted on FR4 board (25.4 mm × 25.4 mm ×1.6 t Cu pad: 0.32 mm2 × 6) Fig: 1 ID max (continuous) *: Single nonrepetitive Pulse Ta = 25°C Curves must be derated linearly with increase in temperature.

Pulse width tw (s) rth – tw Transient thermal impedance r th (°C /W) Ambient temperature Ta (°C) PD – Ta Drain power dissipation P D (mW) 20 0 40 60 100 120 350 150 100 200 250 80 140 160 300 Mounted on FR4 board Cu pad: 0.32 mm2 × 6) Fig: 1 0.001 0.01 0.1 1 10 100 1000 100 1000 Single pulse Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu pad: 0.32 mm2 × 6) Fig: 1

RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL

• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity a nd vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
• The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringement s of patents or other rights of the third parties which may result from its use. No license is granted by implic ation or otherwise under any patents or other rights of TOSHIBA or the third parties.
• Please contact your sales representative for product- by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.