SSM6J07FU

SSM6J07FU_07 TOSHIBA | Alldatasheet

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TOSHIBA Transistor Silicon P Channel MOS Type SSM6J07FU Power Management Switch High Speed Switching Applications

• Small package
• Low on resistance : R on = 450 mΩ (max) (VGS = −10 V) : Ron = 800 mΩ (max) (VGS = −4 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS −30 V Gate-source voltage VGSS ±20 V DC I D −0.8 Drain current Pulse I DP −1.6 A Drain power dissipation P D (Note 1) 300 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm 2 × 6) Marking Equivalent Circuit Figure 1: 25.4 mm × 25.4 mm × 1.6 t, (top view) Cu Pad: 0.32 mm 2 × 6 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-2J1D Weight: 6.8 mg (typ.) K D F 1 2 3 5 4 1 2 3 6 5 0.4 mm 0.8 mm

When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS V GS = ±16 V, VDS = 0 ⎯ ⎯ ±1 μA Drain-source breakdown voltage V (BR) DSS ID = −1 mA, VGS = 0 −30 ⎯ ⎯ V Drain cut-off current IDSS V DS = −30 V, VGS = 0 ⎯ ⎯ −1 μA Gate threshold voltage Vth V DS = −5 V, ID = −0.1 mA −1.1 ⎯ − 1.8 V Forward transfer admittance ⏐Yfs⏐ V DS = −5 V, ID = −0.4 A (Note2) 0.7 ⎯ ⎯ S ID = −0.4 A, VGS = −10 V (Note2) ⎯ 350 450 ID = −0.4 A, VGS = −4 V (Note2) ⎯ 570 800 mΩ Drain-source ON resistance RDS (ON) ID = −0.4 A, VGS = −3.3 V (Note2) ⎯ 0.7 1.6 Ω Input capacitance Ciss V DS = −15 V, VGS = 0, f = 1 MHz ⎯ 130 ⎯ pF Reverse transfer capacitance Crss V DS = −15 V, VGS = 0, f = 1 MHz ⎯ 16 ⎯ pF Output capacitance Coss V DS = −15 V, VGS = 0, f = 1 MHz ⎯ 52 ⎯ pF Turn-on time ton ⎯ 28 ⎯ ns Switching time Turn-off time t off VDD = −15 V, ID = −0.4 A, VGS = 0~−4 V, RG = 10 Ω ⎯ 38 ⎯ ns Note 2: Pulse test Switching Time Test Circuit (a) Test circuit (b) VIN Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = −100 μA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. VDD = −15 V RG = 10 Ω D.U. < = 1% Input: tr, tf < 5 ns Common source Ta = 25°C (c) VOUT VDD Output Input0 −4 V 10 μs RG tf ton 90% 10% 0 V −4 V 90% 10% toff tr VDS (ON) VDD ID

Forward transfer admittance |Yfs| (S) Drain-Source voltage V DS (V) ID – VDS Drain current I D (A) Gate-Source voltage V GS (V) ID – VGS Drain current I D (mA) Drain current I D (A) RDS (ON) – ID Drain-Source on resistance RDS (ON) (m Ω) Drain current I D (A) |Yfs| – ID −1.5 0 −0.5 −1 −1.5 −2 −0.5 Common Source Ta = 25°C −10 −4 −3.3 −3.0 −2.8 −2.6 VGS = −2.4 V 1200 800 0 −0.5 −1 −1.5 −2 400 1600 Common Source Ta = 25°C −4 V −10 V VGS = −3.3 V 200 600 1000 1400 1000 200 400 600 800 −25 150 100 50 0 75 25 125 1200 1400 1600 VGS = −3.3 V −4 V −10 V Common Source ID = −0.4 A Drain reverse current I DR (A) Drain-Source voltage V DS (V) IDR – VDS −0.01 −10 −100 −1000 −3000 −0.1 Ta = 100°C 25°C −25°C Common Source VDS = −5 V RDS (ON) – Ta Drain-Source on resistance RDS (ON) (m Ω) Ambient temperature Ta (°C) 0.01 −0.01 0.1 0.03 0.3 Common Source VDS = −5 V Ta = 25°C −0.5 −1.5 Common Source VGS = 0 Ta = 25°C G D S IDR

Drain-Source voltage V DS (V) C – VDS Capacitance C (pF) Drain current I D (A) t – ID Switching time t (ns) Drain-Source voltage V DS (V) Safe Operating Area Drain current I D (A) PD – Ta Power dissipation P D (mW) Ambient temperature Ta (°C) 20 0 40 60 100 120 350 150 100 200 250 80 140 160 300 Mounted on FR4 board Cu pad: 0.32 mm2 × 6) Figure 1 −0.1 Ciss Coss Crss Common Source VGS = 0 V f = 1 MHz Ta = 25°C −1 −10 −100 100 1000 500 −5 −50 −0.5 * Single non-repetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. DC operation Ta = 25°C 1 ms ID max (pulse) * VDSS max −0.001 −0.1 −0.01 −0.1 −10 −1 −10 −100 10 ms 100 ms ID max (continuous) Mounted on FR4 board (25.4 mm × 25.4 mm ×1.6 t Cu pad: 0.32 mm2 × 6) Figure 1 100 500 Common Source VDD = −15 V VGS = 0~−4 V Rg = 10 Ω Ta = 25°C toff tf ton tr 300

RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL

• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
• The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringement s of patents or other rights of the third parties which may result from its use. No license is granted by implic ation or otherwise under any patents or other rights of TOSHIBA or the third parties.
• Please contact your sales representative for product- by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.