SSM6E01TU

SSM6E01TU TOSHIBA | Alldatasheet

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Silicon P-Channel MOS Type (U-MOS II) + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications /Gb7/G20P-channel MOSFET and N-channel MOSFET incorporated into one package. /Gb7/G20Low power dissipation due to P-channel MOSFET that features low R DS (ON) and low-voltage operation Q1 Maximum Ratings (Ta /G3d/G3d/G3d/G3d 25°C) Characteristics Symbol Rating Unit Drain-Source voltage V DS /G2d12 V Gate-Source voltage V GSS /Gb112 V DC I D /G2d1.0 Drain current Pulse I DP (Note 2) /G2d2.0 A Q2 Maximum Ratings (Ta /G3d/G3d/G3d/G3d 25°C) Characteristics Symbol Rating Unit Drain-Source voltage V DS 20 V Gate-Source voltage V GSS 10 V DC I D 0.05 Drain current Pulse I DP (Note 2) 0.2 A Maximum Ratings (Q1, Q2 common) (Ta /G3d/G3d/G3d/G3d 25°C) Characteristics Symbol Rating Unit Drain power dissipation P D (Note 1) 0.5 W Channel temperature T ch 150 °C Storage temperature range T stg /G2d55~150 °C Note 1: Mounted on an FR4 board (25.4 mm /Gb4 25.4 mm /Gb4 1.6 t, Cu pad: 645 mm2) Note 2: Pulse width limited by maximum channel temperature. Marking Equivalent Circuit (top view) Unit: mm JEDEC ― JEITA ― TOSHIBA ― Weight: 7.0 mg (typ.) 6 5 4 1 2 3 KTA 6 5 4 1 2 3

This product has a MOS structure and is sensitive to electrostatic discharge. When handling individual devices (that have not yet been mounted on a PCB), ensure that the environment is protected against static electricity. Operators should wear anti-static clothing, containers and other objects which may come into direct contact with devices should be made of anti-static materials. Thermal resistance R th (j-a) and drain power dissipation PD vary depending on board material, board area, board thickness and pad area. When using this device, please take heat dissipation into consideration.

Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage (diode) V DSF I DR /G3d 1.0 A, VGS /G3d 0 V /Gbe /Gbe 1.2 V Gate leakage current I GSS V GS /G3d /Gb110 V, VDS /G3d 0 /Gbe /Gbe /Gb11 /G6dA Drain-Source breakdown voltage V (BR) DSS ID /G3d /G2d1 mA, VGS /G3d 0 /G2d12 /Gbe /Gbe V Drain cut-off current I DSS V DS /G3d /G2d12 V, VGS /G3d 0 /Gbe /Gbe /G2d1 /G6dA Gate threshold voltage V th V DS /G3d /G2d3 V, ID /G3d /G2d0.1 mA /G2d0.4 /Gbe /G2d1.1 V Forward transfer admittance |Y fs| V DS /G3d /G2d3 V, ID /G3d /G2d0.5 A (Note 3) 1.3 2.5 /Gbe S ID /G3d /G2d0.5 A, VGS /G3d /G2d4 V (Note 3) /Gbe 125 160 Drain-Source ON resistance R DS (ON) ID /G3d /G2d0.5 A, VGS /G3d /G2d2.5 V (Note 3) /Gbe/G20180 240 m/G57 Input capacitance C iss V DS /G3d /G2d10 V, VGS /G3d 0, f /G3d 1 MHz /Gbe 310 /Gbe pF Note 3: Pulse test Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS /G3d 10 V, VDS /G3d 0 /Gbe /Gbe 15 /G6dA Drain-Source breakdown voltage V (BR) DSS ID /G3d 0.1 mA, VGS /G3d 0 20 /Gbe /Gbe V Drain cut-off current I DSS V DS /G3d 20 V, VGS /G3d 0 /Gbe /Gbe 1 /G6dA Gate threshold voltage V th V DS /G3d 3 V, ID /G3d 0.1 mA 0.7 /Gbe 1.3 V Forward transfer admittance |Y fs| V DS /G3d 3 V, ID /G3d 10 mA (Note 3) 25 50 /Gbe mS Drain-Source ON resistance R DS (ON) I D /G3d 10 mA, VGS /G3d 2.5 V (Note 3) /Gbe 4 10 /G57 Input capacitance C iss V DS /G3d 3 V, VGS /G3d 0, f /G3d 1 MHz /Gbe 11 /Gbe pF Gate-Source resistance R GS V GS /G3d 0~10 V 0.7 /G201.0 1.3 /G20M/G57 Note 3: Pulse test Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID /G3d /Gb1100 /G6dA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) /G3c Vth /G3c VGS (on)) Please take this into consideration for using the device. 2.5 V or higher is recommended for VGS voltage to turn on the N-channel MOSFET of this product.

Load Switch Ratings (Ta /G3d/G3d/G3d/G3d 25°C) Characteristics Symbol Rating Unit Input voltage V in 2.5~12 V ON/OFF voltage V on/off 2.5~10 V Load current (DC) I L 1 A Load current (pulse) I LP (Note 4) 2 A Channel temperature T ch 150 °C Note 4: Pulse width limited by maximum channel temperature. Load Switch Electrical Characteristics (Ta /G3d/G3d/G3d/G3d 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Leakage current I FL V in /G3d 8 V, VON/OFF /G3d 0 /Gbe /Gbe 1 /G6dA VDROP (1) Vin /G3d 3.0 V, VON/OFF /G3d 2.5 V, IL /G3d 0.5 A /Gbe 0.09 0.12 P-channel drop voltage VDROP (2) Vin /G3d 5.0 V, VON/OFF /G3d 2.5 V, IL /G3d 1.0 A /Gbe/G200.13 0.16 V N-channel drive voltage V on/off V DS /G3d 3 V, ID /G3d 0.1 mA 0.7 /Gbe 1.3 V IN ON/OFF OUT /G2bVdrop/G2dVin ON/OFF Vout Nch Pch

1 M/G57

Q1 (Pch MOSFET) Drain-Source on resistance RDS (ON) ( /G57) Drain-Source on resistance RDS (ON) ( /G57) Drain-Source voltage V DS (V) ID – VDS Drain current I D (A) Gate-Source voltage V GS (V) ID – VGS Drain current I D (mA) Drain current I D (A) RDS (ON) – ID Drain-Source on resistance RDS (ON) ( /G57) Gate-Source voltage V GS (V) RDS (ON) – VGS Ambient temperature Ta (°C) RDS (ON) – Ta Ambient temperature Ta (°C) Vth – Ta Gate threshold voltage V th (V) 0 /G2d0.5 /G2d1 /G2d1.5 /G2d2 /G2d0.5 /G2d1 /G2d1.5 /G2d2 Common source Ta /G3d 25°C /G2d1.7 V /G2d1.8 V /G2d2.0 V /G2d4 V /G2d10 V /G2d0.01 0 /G2d0.5 /G2d1 /G2d1.5 /G2d2 /G2d2.5 /G2d0.1 /G2d1 /G2d10 /G2d100 /G2d1000 /G2d10000 /G2d25°C Common source VDS /G3d /G2d3 V 100°C Ta /G3d 25°C 0 /G2d2 /G2d4 /G2d6 /G2d8 /G2d10 /G2d12 0.2 0.4 0.6 0.8 Common source ID /G3d /G2d0.5 A Ta /G3d 100°C /G2d25°C 25°C /G2d25 0 25 50 75 100 125 150 0.1 0.2 0.3 0.4 0.5 Common source ID /G3d /G2d0.5 A /G2d2.5 V /G2d4 V /G2d25 0 25 50 75 100 125 150 /G2d0.2 /G2d0.4 /G2d0.6 /G2d0.8 /G2d1 Common source VDS /G3d /G2d3 V ID /G3d /G2d0.1 mA 0 /G2d0.5 /G2d1.0 /G2d1.5 /G2d2.0 0.2 0.4 /G2d2.5 V /G2d4.0 V Common source Ta /G3d 25°C 0.1 0.3 0.5

Q1 (Pch MOSFET) Drain reveres current I DR (A) Switching time t (ns) Drain current I D (mA) /GefYfs/Gef – ID Forward transfer admittance /GefYfs/Gef ( S ) Drain-Source voltage V DS (V) C – VDS Capacitance C (pF) Total gate charge Qg (nC) Dynamic input characteristics Gate-Source voltage V GS (V) Drain current I D (A) t – ID Drain-Source voltage V DS (V) IDR – VDS 0.01 /G2d1 /G2d10 /G2d100 /G2d1000 /G2d10000 0.1 /G2d0.1 /G2d1 /G2d10 /G2d100 100 1000 Common source VGS /G3d 0 f /G3d 1 MHz Ta /G3d 25°C Ciss Coss Crss 0 2 4 6 8 /G2d2 /G2d4 /G2d6 /G2d8 /G2d10 Common source ID /G3d /G2d1.0 A Ta /G3d 25°C VDD /G3d /G2d10 V /G2d0.01 /G2d0.1 /G2d1 100 500 toff tf ton tr Common source VDD /G3d /G2d10 V VGS /G3d 0 to /G2d2.5 V RG /G3d 4.7 /G57 Ta /G3d 25°C 0 0.2 0.4 0.6 0.8 1 /G2d0.4 /G2d0.8 /G2d1.2 /G2d1.6 /G2d2 Common source VGS /G3d 0 V Ta /G3d 25°C D G S

Q2 (Nch MOSFET) Forward transfer admittance /GefYfs/Gef (mS) Drain current I D (mA) Drain-Source voltage V DS (V) ID – VDS Drain current I D (mA) Drain-Source voltage V DS (V) ID – VDS (low-voltage area) Drain current I D (mA) Drain-Source voltage V DS (V) IDR – VDS Drain reverse current I DR ( m A ) Gate-Source voltage V GS (V) ID – VGS Drain current I D (mA) /GefYfs/Gef – ID Drain-Source voltage V DS (V) C – VDS Capacitance C (pF) Common source VDS /G3d 3 V Ta /G3d 25°C 300 1003 5 10 30 50 100 Common source VGS /G3d 0 f /G3d 1 MHz Ta /G3d 25°C 100 0.1 30 Ciss Coss Crss 0.3 1 3 10 Common source VDS /G3d 3 V 1000 0.01 0 3 /G2d25°C 25°C Ta /G3d 100°C 0.5 1 1.5 2 2.5 0.1 100 100 Common source Ta /G3d 25°C 1.8 4.0 VGS /G3d 1.4 V 1.6 2.2 2.0 2.5 Common source Ta /G3d 25°C 1.8 1.9 VGS /G3d 1.4 V 100 1.6 1.7 2.0 2.5 2 4 6 8 10 0.01 100 0.1 Common source VGS /G3d 0 Ta /G3d 25°C IDR D G S

Q2 (Nch MOSFET) Drain current I D (mA) RDS (ON) – ID Drain-Source on resistance RDS (ON) ( /G57) Drain current I D (mA) t – ID Switching time t (ns) Ambient temperature Ta (°C) RDS (ON) – Ta Drain-Source on resistance RDS (ON) ( /G57) Common source VDD /G3d 3 V VGS /G3d 0~2.5 V Ta /G3d 25°C 10000 0.1 toff tf tr ton 100 300 500 0.3 1 3 10 100 1000 3000 5000 Common source Ta /G3d 25°C VGS /G3d 4 V 2.5 20 40 60 80 100 Common source ID /G3d 10 mA /G2d25 125 100 75 50 25 0 150 VGS /G3d 4 V 2.5

/Gb7/G20TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. /Gb7/G20The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. /Gb7/G20The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. /Gb7/G20The information contained herein is subject to change without notice. 000707EAARESTRICTIONS ON PRODUCT USE