SSM60T03GH

SSM60T03GH SSC | Alldatasheet

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www.SiliconStandard.com 1 of 5 N-channel Enhancement-mode Power MOSFET BVDSS 30V RDS(ON) 12mΩ ID 45A The SSM60T03 acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC Pb-free; RoHS-compliant TO-251 (IPAK) PRODUCT SUMMARY DESCRIPTION Notes: 1.Pulse width must be limited to avoid exceeding the safe operating area. 2.Pulse width <300us, duty cycle <2%. 3.VDD=25V , L=100uH , RG=25Ω , IAS=24A. converters and general load-switching circuits. The SSM60T03GH is in a TO-252 package, which is widely used for commercial and industrial surface-mount applications. The through-hole version, the SSM60T03GJ in TO-251, is available for vertical mounting, where a small footprint and TO-252 (DPAK) G D S TO-252 (suffix H) G D S TO-251 (suffix J) is required on the board, and/or an external heatsink is to be attached. These devices are manufactured with an advanced process, providing improved on-resistance and switching performance. The devices have a maximum junction temperature rating of 175°C for improved thermal margin and reliability. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Units VDS VGS V ID IDM A PD W/°C EAS Single pulse avalanche energy3 mJ TSTG TJ Symbol Parameter Value Units RΘ JC Maximum thermal resistance, junction-case 3.4 °C/W RΘ JA Maximum thermal resistance, junction-ambient 110 °C/W Drain-source voltage 30 V Gate-source voltage ±20 Continuous drain current, TC = 25°C 45 A TC = 100°C 32 A Pulsed drain current1 120 Total power dissipation, TC = 25°C 44 W -55 to 175 °C Operating junction temperature range -55 to 175 °C Linear derating factor 0.352 THERMAL CHARACTERISTICS Storage temperature range SSM60T03GH,J 10/16/2005 Rev.3 .1

ELECTRICAL CHARACTERISTICS (at Tj = 25°C, unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-source breakdown voltage V GS=0V, ID=250uA 30 - - V Δ BV DSS /Δ T j Breakdown voltage temperature coefficient Reference to 25°C, ID=1mA - 0.026 - V/°C RDS(ON) Static drain-source on-resistance V GS=10V, ID=20A - - 12 mΩ VGS=4.5V, ID=15A - - 25 mΩ VGS(th) Gate threshold voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward transconductance VDS=10V, ID=10A - 25 - S IDSS Drain-source leakage current VDS=30V, VGS=0V - - 1 uA VDS=24V ,VGS=0V, Tj=175°C - - 250 uA IGSS Gate-source leakage current VGS= ±20V - - ±100 nA Qg Total gate charge2 ID=20A - 11.6 - nC Qgs Gate-source charge VDS=20V - 3.9 - nC Qgd Gate-drain ("Miller") charge VGS=4.5V - 7 - nC td(on) Turn-on delay time2 VDS=15V - 8.8 - ns tr Rise time ID=20A - 57.5 - ns td(off) Turn-off delay time R G=3.3Ω, V GS=10V - 18.5 - ns tf Fall time R D=0.75Ω - 6.4 - ns Ciss Input capacitance V GS=0V - 1135 - pF Coss Output capacitance VDS=25V - 200 - pF Crss Reverse transfer capacitance f=1.0MHz - 135 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward voltage2 IS=45A, VGS=0V - - 1.3 V trr Reverse-recovery time2 IS=20A, VGS=0V, - 23.3 - ns Qrr Reverse-recovery charge dI/dt=100A/µs - 16 - nC www.SiliconStandard.com 2 of 5 SSM60T03GH,J 10/16/2005 Rev.3 .1 Notes: 1.Pulse width must be limited to avoid exceeding the safe operating area. 2.Pulse width <300us, duty cycle <2%. 3.VDD=25V , L=100uH , RG=25Ω , IAS=24A.

www.SiliconStandard.com 3 of 5 SSM60T03GH,J 10/16/2005 Rev.3 .1 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance vs. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage vs. Reverse Diode Junction Temperature 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =175 o C 10V 8.0V 6.0V 5.0V V G =4.0V 100 125 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 8.0V 6.0V 5.0V V G =4.0V 0.4 0.8 1.2 1.6 -50 25 100 175 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =20A V G =10V 35791 1 V GS , Gate-to-Source Voltage (V) RDS(ON) (mΩ ) I D =20A T C =25°C 0.1 100 0 0.5 1 1.5 V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =175 o C 0.3 0.8 1.3 1.8 2.3 2.8 -50 25 100 175 T j , Junction Temperature ( o C ) VGS(th) (V)

www.SiliconStandard.com 4 of 5 SSM60T03GH,J 10/16/2005 Rev.3 .1 Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedanc Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 100 1000 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty Factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor = 0.5 Single Pulse 0 6 12 18 24 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =20A V DS =10V V DS =15V V DS =20V 100 1000 10000 1 8 15 22 29 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss td(on) tr td(off) tf VDS VGS 10% 90% Q VG 4.5V QGS QGD QG Charge

Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expre ss or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. www.SiliconStandard.com 5 of 5 PHYSICAL DIMENSIONS PART MARKING PACKING: Moisture sensitivity level MSL3 TO-251: 1000pcs in an antistatic bag packed inside a moisture barrier bag (MBB). MILLIMETERS TO-252-3L MAX. 2.80A S Y M B O L MIN. 1.80 0.13 5.90 0.65 0.89 6.30 7.00 1.00 0.00 4.80 0.35 0.40 5.10 6.00 7.80 1.00 0.50 0.50 0.40 SEE VIEW B A H AA e E D L3L4 c BASE METAL WITH PLATING b SECTION A-A SEATING PLANE VIEW B L GAUGE PLANE θ 0° 8°θ 11.05 2.55 2.03 1.20

2.30 BSC

b E D c H L L1 2.20 3.05 L2 0.35 0.65 e PART NUMBER: 60T03GH or 60T03GJ XXXXXX YWWSSS DATE/LOT CODE: (YWWSSS) Y = last digit of the year WW = week SSS = lot code sequence TO-252: 3000 pcs in antistatic tape on a reel packed inside a moisture barrier bag (MBB). *Dimensions do not include mold protrusions. SSM60T03GH,J 10/16/2005 Rev.3 .1