SSM5H12TU

SSM5H12TU TOSHIBA | Alldatasheet

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Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode SSM5H12TU DC-DC Converter Applications

• 1.8-V drive
• Combined an N-ch MOSFET and a Schottky barrier diode in one package.
• Low R DS (ON) and Low VF Absolute Maximum Ratings MOSFET (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ± 12 V DC I D 1.9 Drain current Pulse I DP 3.8 A P D (Note 1) 0.5 Power dissipation t = 10s 0.8 W Channel temperature Tch 150 °C Schottky Barrier Diode (Ta = 25°C) Characteristics Symbol Rating Unit Repetitive peak reverse voltage VRRM 30 V Average forward current IF(AV) 0.7 A Peak one cycle surge forward current I FSM 2 (50Hz) A Junction temperature Tj 125 °C MOSFET and Diode (Ta = 25°C) Characteristics Symbol Rating Unit Storage temperature range Tstg −55 to 125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 645 mm Marking Equivalent Circuit (top view) Unit: mm UFV JEDEC ― JEITA ― TOSHIBA 2-2R1A Weight: 7 mg (typ.) 1 3 KEW 4 5 13 2

Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Conditions Min Typ. Max Unit V (BR) DSS ID = 1 mA, VGS = 0 V 30 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = 1 mA, VGS = −12 V 18 ⎯ ⎯ V Drain cut-off current IDSS V DS = 30 V, VGS = 0 V ⎯ ⎯ 1 μA Gate leakage current IGSS V GS = ± 12 V, VDS = 0 V ⎯ ⎯ ±1 μA Gate threshold voltage Vth V DS = 3 V, ID = 1 mA 0.4 ⎯ 1.0 V Forward transfer admittance ⏐Yfs⏐ V DS = 3 V, ID = 1.0 A (Note 2) 2.0 3.9 ⎯ S ID = 1.0 A, VGS = 4.0 V (Note 2) ⎯ 103 133 ID = 0.8 A, VGS = 2.5 V (Note 2) ⎯ 125 177Drain–source ON-resistance RDS (ON) ID = 0.5 A, VGS = 1.8 V (Note 2) ⎯ 165 296 mΩ Input capacitance Ciss ⎯ 123 ⎯ Output capacitance Coss ⎯ 43 ⎯ Reverse transfer capacitance Crss VDS = 15V, VGS = 0 V, f = 1 MHz ⎯ 18 ⎯ pF Total gate charge Qg ⎯ 1.9 ⎯ Gate-source charge Qgs ⎯ 1.1 ⎯ Gate-drain charge Qgd VDS = 15V, ID = 1.9 A VGS = 4 V ⎯ 0.8 ⎯ nC Turn-on time ton ⎯ 9.2 ⎯ Switching time Turn-off time t off VDD = 15 V, ID = 1.0 A, VGS = 0 to 2.5 V, RG = 4.7 Ω ⎯ 6.4 ⎯ ns Drain-source forward voltage VDSF I D = -1.9 A, VGS = 0 V (Note 2) ⎯ -0.83 -1.2 V Note 2: Pulse test Switching Time Test Circuit (a) Test Circuit (b) VIN Precaution Vth can be expressed as voltage between gate and source when the low operating current value is ID = 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on)) Be sure to take this into consideration when using the device. (c) VOUT VDD = 15 V RG = 4.7 Ω Duty.≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C VDD OUT IN 2.5 V 10 μs RG tf ton 90% 10% 2.5V 0 V 90% 10% toff tr VDD VDS (ON)

Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit VFM (1) I F = 0.5 A ⎯ 0.34 0.41 V Peak forward voltage VFM (2) I F = 0.7 A ⎯ 0.37 0.44 V Repetitive peak reverse current IRRM V R = 15 V ⎯ 60 200 μA Total capacitance CT VR = 0 V, f = 1 MHz ⎯ 139 ⎯ pF Precaution The Schottky barrier diode in this device has large reverse current leakage compared to typical switching diodes. Thus, excessive operating temperature or voltage may cause thermal runaway. To avoid this problem, be sure to take both forward and reverse loss into consideration. Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. Thermal resistance Rth (j-a) and power dissipation PD vary depending on board material, board area, board thickness and pad area. When using this device, please take heat dissipation into consideration.

Ambient temperature Ta (°C) Ambient temperature Ta (°C) RDS (ON) – ID Drain–source voltage V DS (V) ID – VDS Drain current I D (A) 0 0.2 0.4 0.6 VGS = 1.2 V 10 V Common Source Ta = 25 °C Pulse test 4.0 V 1.8 V Gate–source voltage V GS ( V ) ID – VGS Drain current I D (A) 0.1 0.001 0.01 0.0001 2.0 − 25 °C Ta = 100 °C 25 °C 1.0 Vth – Ta Gate threshold voltage V th (V) 1.0 −50 0 150 50 100 RDS (ON) – Ta Drain–source ON-resistance RDS (ON) ( m Ω) Drain–source ON-resistance RDS (ON) ( m Ω) Gate–source voltage V GS ( V ) RDS (ON) – VGS ID =1.0A Common Source Pulse test Common Source VDS = 3 V Pulse test Drain current I D (A) Drain–source ON-resistance RDS (ON) ( m Ω) Common Source Ta = 25°C Pulse test 0.5 Common Source VDS = 3 V ID = 1 mA 0.8 1.0 2.5 V 1.5 V 0 4 400 200 − 25 °C Ta = 100 °C 25 °C 300 100 8 2 6 10 VGS = 4.0 V 0 1 2 3 400 200 2.5 V 300 100 1.8 V −50 0 50 150 200 100 400 ID = 0.5 A / VGS = 1.8 V 0.8 A / 2.5 V 300 100 1.0 A / 4.0 V Common Source Pulse test

Drain current I D (A) Forward transfer admittance ⎪Yfs⎪ (S) |Yfs| – ID 0.1 0.1 1 0.3 0.01 Drain–source voltage V DS (V) C – VDS Capacitance C (pF) 0.1 1 10 100 100 Common Source Ta = 25°C f = 1 MHz VGS = 0 V Drain current I D (A) Switching time t (ns) t – ID 0.01 100 0.1 1000 1 10 tf ton tr Common Source VDD = 15 V VGS = 0 to 2.5 V Ta = 25 °C RG = 4.7 Ω Drain reverse current I DR (A) Drain–source voltage V DS (V) IDR – VDS 0.1 0.001 0.01 –0.5 –1.0 −25 °C Ta =100 °C 25 °C –1.5 Common Source VGS = 0 V Pulse test G D S IDR toff Ciss Coss Crss 500 300 1000 Common Source VDS = 3 V Ta = 25°C Pulse test Total Gate Charge Q g ( n C ) Dynamic Input Characteristic Gate–Source voltage V GS ( V ) 0 0 2 VDD = 24 V 4 1 3 Common Source ID = 1.9 A Ta = 25°C VDD = 15 V

Instantaneous forward current I F ( m A ) Instantaneous forward voltage V F ( V ) IF – VF Ta max – IF (AV) Maximum allowable temperature T a m a x ( ° C ) Average forward current I F (AV) (A) PF(AV) – IF(AV) Average forward power dissipation P F (AV) (W) Average forward current I F (AV) (A) Total capacitance C T ( p F ) Reverse voltage V R (V) CT – VR (typical) 1000 100 0.1 0.4 25 °C 0.5 0.1 0.3 0.2 0.4 0.1 1.0 0.8 0.3 1.2 0.5 0.6 0.4 0.2 0 DC α = 30°α = 30° 60 90 120 180 0.2 100 120 140 DC 1 10 100 100 f = 1 MHz Ta = 25°C 360° 0° α Rectangular waveform Conduction angle α

Reverse current I R ( μA) Reverse voltage V R (V) IR – VR Junction temperature T j ( ° C ) I R – Tj (typical) Reverse current I R (mA) Average reverse power dissipation P R (AV) (W) Reverse voltage V R (V) P R (AV) – VR (typical) 1000 100 25 °C 10 15 30 5 20 0.01 0 50 100 150 0.1 1000 100 VR = 3 V Pulse test 0 10 15 20 α = 60° 120 180 240 300 DC 360° 0° Rectangular waveform Conduction angle α Tj = 125°C VR α Pulse test e

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