SSM5G01TU

SSM5G01TU TOSHIBA | Alldatasheet

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Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Planar Diode SSM5G01TU DC-DC Converter for DSCs and Camcorders /Gb7/G20Co-packaged Pch MOSFET and Schottky Diode. /Gb7/G20Low RDS (ON) and Low VF Maximum Ratings (Ta /G3d/G3d/G3d/G3d 25°C) Characteristics Symbol Rating Unit Drain-Source voltage V DS /G2d30 V Gate-Source voltage V GSS /Gb120 V DC I D /G2d1.0 Drain current Pulse I DP (Note 2) /G2d2.0 A PD (Note 1) 0.5 Channel temperature t /G3d 10s 0.8 W Channel temperature T ch 150 /Gb0C Maximum Ratings (Ta /G3d/G3d/G3d/G3d 25°C) SCHOTTKY DIODE Characteristics Symbol Rating Unit Maximum (peak) reverse voltage V RM 25 V Reverse voltage V R 20 V Average forward current I O 0.5 A Peak one cycle surge forward current (non-repetitive) IFSM 2 (50 Hz) A Junction temperature T j 125 /Gb0C Maximum Ratings (Ta /G3d/G3d/G3d/G3d 25°C) MOSFET, DIODE COMMON Characteristics Symbol Rating Unit Storage temperature T stg /G2d55~125 /Gb0C Operating temperature Topr (Note 3) /G2d40~100 /Gb0C Note 1: Mounted on FR4 board (25.4 mm /Gb4 25.4 mm /Gb4 1.6 t, Cu pad: 645 mm2) Note 2: The pulse width limited by max channel temperature. Note 3: Operating temperature limited by max channel temperature and max junction temperature. Unit: mm UFV JEDEC ― JEITA ― TOSHIBA 2-2R1A Weight: 7 mg (typ.)

Marking Equivalent Circuit Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the board material, board area, board thickness and pad area are also affected by the environment in which the product is used. When using this device, please take heat dissipation fully into account. 1 3 KEA 4 5 13 2

Electrical Characteristics (Ta /G3d/G3d/G3d/G3d 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS /G3d /Gb116 V, VDS /G3d 0 /Gbe /Gbe /Gb11 /G6dA V (BR) DSS ID /G3d /G2d1 mA, VGS /G3d 0 /G2d30 /Gbe /Gbe Drain-Source breakdown voltage V (BR) DSX ID /G3d /G2d1 mA, VGS /G3d 20 V /G2d15/G20/Gbe /G20 /Gbe /G20 V Drain Cut-off current I DSS V DS /G3d /G2d30 V, VGS /G3d 0 /Gbe /Gbe /G2d1 /G6dA Gate threshold voltage V th V DS /G3d /G2d5 V, ID /G3d /G2d0.1 mA /G2d0.8 /Gbe /G2d1.8 V Forward transfer admittance |Y fs| V DS /G3d /G2d5 V, ID /G3d /G2d0.5 A (Note 4) 0.5 1.0 /Gbe S ID /G3d /G2d0.5 A, VGS /G3d /G2d10 V (Note 4) /Gbe 0.3 0.4 Drain-Source ON resistance R DS (ON) ID /G3d /G2d0.5 A, VGS /G3d /G2d4 V (Note 4) /Gbe 0.6 0.8 /G57 Input capacitance C iss V DS /G3d /G2d15 V, VGS /G3d 0, f /G3d 1 MHz /Gbe 86 /Gbe pF Reverse transfer capacitance C rss V DS /G3d /G2d15 V, VGS /G3d 0, f /G3d 1 MHz /Gbe 14 /Gbe pF Output capacitance C oss V DS /G3d /G2d15 V, VGS /G3d 0, f /G3d 1 MHz /Gbe 25 /Gbe pF Turn-on time t on /Gbe 14 /Gbe Switching time Turn-off time t off VDD /G3d /G2d15 V, ID /G3d /G2d0.5 A VGS /G3d 0~/G2d4 V, RG /G3d 10 /G57 /Gbe/G208.5 /Gbe/G20 ns Note 4: Pulse measurement Switching Time Test Circuit Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID /G3d /G2d100 /G6dA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) /G3c Vth /G3c VGS (on)) Please take this into consideration for using the device. V GS recommended voltage of /G2d2.5 V or higher to turn on this product. ton t off (b) VIN (c) VOUT 0 V /G2d4 V VDD VDS (ON) tr t f 10% 90% 90% 10% (a) Test circuit VDD /G3d /G2d15 V RG /G3d 10 /G57 Duty /G3c/G3d1% VIN: tr, tf /G3c 5 ns Common source Ta /G3d 25°C /G2d4 V IN OUT VDD 10 /G6ds RG

Electrical Characteristics (Ta /G3d/G3d/G3d/G3d 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit VF (1) I F /G3d 0.3 A /Gbe 0.38 0.45 V Forward voltage VF (2) I F /G3d 0.5 A /Gbe 0.43 /Gbe V Reverse current I R V R /G3d 20 V /Gbe /Gbe 50 /G6dA Total capacitance C T V R /G3d 0 V, f /G3d 1 MHz /Gbe 46 /Gbe pF Precaution The schottky barrier diode of this product are having large-reverse-current-leakage characteristic compare to the other switching diodes. This current leakage and not proper operating temperature or voltage may cause thermal runaway. Please take forward and reverse loss into consideration when you design.

Drain-Source on resistance RDS (ON) ( /G57) Drain-Source voltage V DS (V) ID – VDS (MOSFET) Drain current I D (A) Gate-Source voltage V GS (V) ID – VGS (MOSFET) Drain current I D (mA) Drain current I D (A) RDS (ON) – ID (MOSFET) Drain-Source on resistance RDS (ON) ( /G57) Gate-Source voltage V GS (V) RDS (ON) – VGS (MOSFET) Ambient temperature Ta (°C) Ambient temperature Ta (°C) Vth – Ta (MOSFET) Gate threshold voltage V th (V) RDS (ON) – Ta (MOSFET) Drain-Source on resistance RDS (ON) ( /G57) /G2d2 /G2d1.5 /G2d1 /G2d0.5 0 /G2d0.5 /G2d1 /G2d1.5 /G2d2 Common Source Ta /G3d 25°C /G2d4.5 /G2d4.0 /G2d3.5 /G2d3.0 /G2d10 VGS /G3d /G2d2.5 V /G2d10000 /G2d0.01 /G2d100 /G2d1000 /G2d1 /G2d10 /G2d0.1 /G2d5 /G2d1 /G2d3 /G2d25°C Common Source VDS /G3d /G2d5 V Ta /G3d 100°C 25°C /G2d2 /G2d4 0.4 /G2d5 /G2d10 /G2d15 /G2d20 0.8 1.2 1.6 Common Source ID /G3d /G2d0.5 A /G2d25°C Ta /G3d 100°C 25°C 0.2 /G2d0.5 /G2d1.0 /G2d1.5 /G2d2.0 0.4 0.6 0.8 Common Source Ta /G3d 25°C VGS /G3d /G2d4 V /G2d10 V 1.2 Common Source ID /G3d /G2d0.5 A /G2d25 0 25 150 0.2 0.4 0.6 0.8 50 75 100 125 VGS /G3d /G2d4.0 V /G2d10 V /G2d3 /G2d25 0 25 150 /G2d0.5 /G2d1 /G2d1.5 /G2d2 /G2d2.5 50 75 100 125 Common Source VDS /G3d /G2d5 V ID /G3d /G2d0.1 mA

Drain reverse current I DR (A) Switching time t (ns) Drain current I D (mA) Forward transfer admittance /GefYfs/Gef (S) Drain-Source voltage V DS (V) C – VDS (MOSFET) Capacitance C (pF) Total gate charge Q g (nC) Dynamic input characteristic (MOSFET) Gate-Source voltage V GS (V) Drain current I D (A) t – ID (MOSFET) Drain-Source voltage V DS (V) IDR – VDS (MOSFET) /G2d0.1 /G2d1 /G2d10 /G2d100 100 500 300

5 Common Source

Ta /G3d 25°C f /G3d 1 MHz VGS /G3d 0 V Ciss Coss Crss |Yfs| – ID (MOSFET) Common Source VDS /G3d /G2d5 V Ta /G3d 25°C 0.001 /G2d10000/G2d1 0.01 0.1 /G2d10 /G2d100 /G2d1000 0.3 0.03 /G2d10 /G2d6 /G2d8 /G2d4 /G2d2 1 2 3 Common Source ID /G3d /G2d1 A Ta /G3d 25°C/G20 /G2d12 V VDD /G3d /G2d24 V Common Source VDD /G3d /G2d15 V VGS /G3d 0/G7e /G2d4 V Ta /G3d 25°C RG /G3d 10 /G57/G20 /G2d1 /G2d0.1/G2d0.01 /G2d3/G2d0.3 /G2d0.03 300 100 toff tf ton tr Common Source VGS /G3d 0 Ta /G3d 25°C /G2d1.2 /G2d2 /G2d0.4 /G2d0.8 /G2d1.6 D G S IDR 0.2 0.4 0.6 0.8 1

Drain power dissipation P D (W) rth – tw (MOSFET) Transient thermal impedance r th ( ° C / W ) Drain-Source voltage V DS (V) Safe operating area (MOSFET) Drain current I D (A) Ambient temperature Ta (°C) PD – Ta (MOSFET) 0.001 1000 0.01 0.1 1 100 100 1000 Single pulse Mounted on FR4 board (25.4 mm /Gb4 25.4 mm /Gb4 1.6 t, Cu Pad: 645 mm2) /G2d0.1 /G2d3 /G2d1 /G2d1 /G2d100 /G2d0.1 /G2d0.01 /G2d10 DC operation Ta /G3d 25/Gb0C ID max (pulsed) ID max (continuous) 10 ms* 10 s* Mounted on FR4 board (25.4 mm /Gb4 25.4 mm /Gb4 1.6 t, Cu Pad: 645 mm2) *: Single nonrepetitive pulse Ta /G3d 25°C Curves must be derated linearly with increase in temperature. VDSS max 1 ms* /G2d0.3 /G2d0.03 0.4 0 100 50 1.2 Mounted on FR4 board (25.4 mm /Gb4 25.4 mm /Gb4 1.6 t, Cu Pad: 645 mm2） t /G3d 10 s DC 0.6 0.2 0.8 150 Pulse width t w (s)

Total capacitance C T ( p F ) Forward voltage V F (V) IF – VF (SBD) Forward current I F (mA) Reverse voltage V R (V) IR – VR (SBD) Reverse current I R ( m A ) Pulse width t w (s) rth – tw (SBD) Transient thermal impedance r th (°C/W) Reverse voltage V R (V) CT – VR (SBD) 3000 100 1000 0.01 0.1 1 10 100 f /G3d 1 MHz Ta /G3d 25°C 0.001 0.1 0.01 20 5 Pulse mesurement Ta /G3d 25°C 10 15 100 1000 100 0.1 0.4 0.5 0.7 125 Ta /G3d 25°C 100 0 0.2 0.3 0.6 0.001 1000 100 0.1 100 10001 Single pulse Mounted on FR4 board (25.4 mm /Gb4 25.4 mm /Gb4 1.6 t, Cu Pad: 645 mm2) 00.1 10

/Gb7/G20TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. /Gb7/G20The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. /Gb7/G20The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. /Gb7/G20The information contained herein is subject to change without notice. 000707EAARESTRICTIONS ON PRODUCT USE