SSM5951 SECOS | Alldatasheet
Document overview
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Technical content
-2.6A, -30V , R DS(O/glyph1197) 150mΩΩ ΩΩ P-Channel Enhancement Mode Power MOSFET 25-Sep-2017 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSM5951 is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent R DS(ON) and gate charge for most of the synchronous buck converter applications . The SSM5951 meet the RoHS and Green Product requirement with full function reliability approved.
FEATURES
/circle6 Advanced High Cell Density Trench Technology /circle6 Super Low Gate Charge /circle6 Green Device Available MARKING
PACKAGE INFORMATION
SOT-223 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS (T A=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±12 V TA=25°C -2.6 A Continuous Drain Current @VGS =10V 1 TA=70°C ID -2.1 A Pulsed Drain Current 3 IDM -10.4 A Total Power Dissipation T A=25°C P D 1.5 W Operating Junction and Storage Temperature Range TJ, T STG -55~150 °C Thermal Resistance Rating Maximum Thermal Resistance from Junction to Ambient 1 85 Maximum Thermal Resistance from Junction to Ambient 2 RθJA 125 Maximum Thermal Resistance from Junction to Case 1 R θJC 60 °C / W SOT-223 Top View A M B D LK F G H J E C
1 Gate
A 5.90 6.70 G - 0.18 B 6.70 7.30 H 2.00 REF. C 3.30 3.80 J 0.20 0.40 D 1.40 1.90 K 1.10 REF. E 4.45 4.75 L 2.30 REF. F 0.60 0.85 M 2.80 3.20 5951 /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4 /box4/box4 = Date code
-2.6A, -30V , R DS(O/glyph1197) 150mΩΩ ΩΩ P-Channel Enhancement Mode Power MOSFET 25-Sep-2017 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS
(T J=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Drain-Source Breakdown Voltage BV DSS -30 - - V V GS =0, I D = -250uA Gate Threshold Voltage V GS(th) -0.5 - -1.2 V V DS =VGS , I D = -250uA Gate-Source Leakage Current IGSS - - ±100 nA V GS =±12V - - -1 V DS = -30V, V GS =0, T J=25°C Drain-Source Leakage Current IDSS - - -5 uA VDS = -30V, V GS =0, T J=55°C - - 150 V GS = -10V, I D = -2.6A - - 166 V GS = -4.5V, I D = -2A Static Drain-Source On-Resistance 4 RDS(ON) - - 220 mΩ VGS = -2.5V, I D = -1A Total Gate Charge VGS = -10V Q g - 11.6 - Total Gate Charge VGS = -4.5V Qg - 5.6 - Gate-Source Charge Q gs - 1 - Gate-Drain Charge Q gd - 1.4 - nC ID = -1.4A VDS = -15V VGS = -10V Turn-On Delay Time T d(on) - 4.4 - Rise Time T r - 17 - Turn-Off Delay Time T d(off) - 34.6 - Fall Time T f - 4.6 - nS VDS= -15V ID = -1.4A VGS = -10V RG=3Ω Input Capacitance C iss - 480 - Output Capacitance C oss - 63 - Reverse Transfer Capacitance Crss - 33 - pF VGS =0 VDS = -15V f=1MHz Source-Drain Diode Forward On Voltage 4 V SD - - -1 V I S= -1A, V GS =0V Continuous Source Current 1 I S - - -2.6 Pulsed Source Current 3 I SM - - -10.4 A Reverse Recovery Time t rr - 7 - nS Reverse Recovery Charge Q rr - 2.9 - nC IF = -1A , dI/dt=100A/µs , TJ=25°C Notes: 1. Surface mounted on a 1 inch 2 FR4 board with 2OZ copper 2. When mounted on Min. copper pad. 3. Pulse width limited by maximum junction temperature., Pw ≤ 300µs, Duty cycle ≤ 1% 4. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
-2.6A, -30V , R DS(O/glyph1197) 150mΩΩ ΩΩ P-Channel Enhancement Mode Power MOSFET 25-Sep-2017 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TYPICAL CHARACTERISTIC CURVES
-2.6A, -30V , R DS(O/glyph1197) 150mΩΩ ΩΩ P-Channel Enhancement Mode Power MOSFET 25-Sep-2017 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TYPICAL CHARACTERISTIC CURVES