SSM4407GM

SSM4407GM SSC | Alldatasheet

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www.SiliconStandard.com 1 of 5 P-channel Enhancement-mode Power MOSFET BVDSS -30V RDS(ON) 14mΩ ID -10.7A The SSM4407GM acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC Pb-free; RoHS-compliant SO-8 PRODUCT SUMMARY DESCRIPTION Notes: 1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C. 2.Pulse width <300us, duty cycle <2%. 3.Mounted on a square inch of copper pad on FR4 board ; 125°C/W when mounted on the minimum pad area required for soldering. converters and general load-switching circuits. The SSM4407GM is supplied in a RoHS-compliant SO-8 package, which is widely used for medium power commercial and industrial surface mount applications. S S S G D D D D SO-8 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Units VDS VGS ID IDM PD W/°C TSTG TJ Symbol Parameter Value Units RΘJA Maximum thermal resistance, junction-ambient 3 50 °C/W Drain-source voltage -30 V Gate-source voltage ±25 V Continuous drain current, TC = 25°C -10.7 A TC = 70°C -8.6 A Pulsed drain current1 -50 A Total power dissipation, TC = 25°C 2.5 W -55 to 150 °C Operating junction temperature range -55 to 150 °C Linear derating factor 0.02 THERMAL CHARACTERISTICS Storage temperature range SSM4407GM 12/16/2005 Rev.3.01

www.SiliconStandard.com 2 of 5 ELECTRICAL CHARACTERISTICS (at Tj = 25°C, unless otherwise specified) Notes: 1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C. 2.Pulse width <300us, duty cycle <2%. Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-source breakdown voltage V GS=0V, ID=-250uA -60 - - V Δ BVDSS/ ΔTj Breakdown voltage temperature coefficient Reference to 25°C, ID=-1mA - -0.015 - V/°C RDS(ON) Static drain-source on-resistance2 V GS=-10V, ID=-10A - - 14 mΩ VGS=-4.5V, ID=-5A - - 25 mΩ VGS(th) Gate threshold voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward transconductance V DS=-10V, ID=-10A - 13 - S IDSS Drain-source leakage current VDS=-30V, VGS=0V - - -1 uA VDS=-24V ,VGS=0V, Tj = 70°C - - -25 uA IGSS Gate-source leakage current VGS=±25V - - ±100 nA Qg Total gate charge 2 ID=-10A - 28 45 nC Qgs Gate-source charge VDS=-24V - 5.2 - nC Qgd Gate-drain ("Miller") charge V GS=-10V - 19.8 - nC td(on) Turn-on delay time 2 VDS=-15V - 12 - ns tr Rise time ID=-1A - 11 - ns td(off) Turn-off delay time R G=6.8Ω , V GS=-10V - 97 - ns tf Fall time R D=15Ω - 72 - ns Ciss Input capacitance VGS=0V - 1960 3200 pF Coss Output capacitance VDS=-25V - 590 - pF Crss Reverse transfer capacitance f=1.0MHz - 465 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward voltage 2 IS=-2A, VGS=0V - - -1.2 V trr Reverse-recovery time IS=-10A, VGS=0V, - 36 - ns Qrr Reverse-recovery charge dI/dt=100A/µs - 34 - nC SSM4407GM 12/16/2005 Rev.3.01

www.SiliconStandard.com 3 of 5 SSM4407GM 12/16/2005 Rev.3.01 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance vs. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage vs. Reverse Diode Junction Temperature 01122 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =150 o C -10V -5.0V -4.5V -4.0V V G =-3.0V 3579 1 1 -V GS , Gate-to-Source Voltage (V) RDS(ON) (mΩ ) I D =-10A T A =25 o C 0.60 0.80 1.00 1.20 1.40 1.60 1.80 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) V GS = -10V I D =-10A 0.01 0.10 1.00 10.00 100.00 -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C -50 0 50 100 150 T j , Junction Temperature ( o C) -VGS(th) (V) 0123 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =25 o C -10V -5.0V -4.5V -4.0V V G =-3.0V

www.SiliconStandard.com 4 of 5 SSM4407GM 12/16/2005 Rev.3.01 Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 0 2 4 6 8 10 12 14 16 18 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = -10A V DS = -24V 100 1000 10000 1 5 9 1 31 72 12 52 9 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MH Ciss Coss Crss td(on) tr td(off)tf VDS VGS 10% 90% Q VG -4.5V QGS QGD QG Charge 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R thja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta t T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 Single Pulse RΘJA = 125°C/W 0.01 0.1 100 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) 100us 1ms 10ms 100ms 10s DC T A =25 o C Single Pulse

www.SiliconStandard.com 5 of 5 PHYSICAL DIMENSIONS PART MARKING PACKING: Moisture sensitivity level MSL3 3000 pcs in antistatic tape on a 13 inch (330mm) reel packed in a moisture barrier bag (MBB). SYMBOL MIN MAX A 1.35 1.75 A1 0.10 0.25 B 0.33 0.51 C 0.19 0.25 D 4.80 5.00 E 3.80 4.00 e 1.27(TYP) H 5.80 6.50 L 0.38 1.27 D H e A B C E L Dimensions do not include mold protrusions. PART NUMBER: 4407GM XXXXXX YWWSSS DATE/LOT CODE: (YWWSSS) Y = last digit of the year WW = week SSS = lot code sequence All dimensions in millimeters. SSM4407GM 12/16/2005 Rev.3.01