SSM3J306T

SSM3J306T TOSHIBA | Alldatasheet

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TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J306T Power management switch Applications

• 4 V drive
• Low ON-resistance: R on = 225 mΩ (max) (@VGS = −4 V) R on = 117 mΩ (max) (@VGS = −10 V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain–source voltage VDS −30 V Gate–source voltage VGSS ± 20 V DC I D −2.4 Drain current Pulse I DP −4.8 A Drain power dissipation PD (Note 1) 700 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm 2 ) Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit V (BR) DSS I D = −1 mA, VGS = 0 −30 ⎯ ⎯ Drain–source breakdown voltage V (BR) DSX I D = −1 mA, VGS = +20 V −15 ⎯ ⎯ V Drain cutoff current IDSS V DS = −30 V, VGS = 0 ⎯ ⎯ −1 μA Gate leakage current IGSS V GS = ±16 V, VDS = 0 ⎯ ⎯ ±1 μA Gate threshold voltage Vth V DS = −5 V, ID = −1 mA −1.2 ⎯ − 2.6 V Forward transfer admittance ⏐Yfs⏐ V DS = −5 V, ID =− 1 A (Note 2) 1.6 3.1 ⎯ S ID = −1 A, VGS = −10 V (Note 2) ⎯ 80 117 Drain–source ON-resistance RDS (ON) ID = −0.5 A, VGS = −4 V (Note 2) ⎯ 160 225 mΩ Input capacitance Ciss ⎯ 280 ⎯ Output capacitance Coss ⎯ 80 ⎯ Reverse transfer capacitance Crss VDS = −15 V, VGS = 0, f = 1 MHz ⎯ 45 ⎯ pF Total Gate Charge Qg ⎯ 2.5 ⎯ Gate-Source Charge Qgs ⎯ 1.3 ⎯ Gate-Drain Charge Qgd VDS = -15 V, IDS= -2.4 A VGS = -4 V ⎯ 1.2 ⎯ nC Turn-on time t on ⎯ 16 ⎯ Switching time Turn-off time t off VDD = −15 V, ID = −1 A, VGS = 0 to −4 V, RG = 10 Ω ⎯ 35 ⎯ ns Drain–source forward voltage VDSF I D = 2.4 A, VGS = 0 V (Note 2) ⎯ 0.8 1.2 V Note 2: Pulse test Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3S1A Weight: 10 mg (typ.)

Switching Time Test Circuit M a r k i n g E q u i v a l e n t C i r c u i t (top view) Precaution Vth can be expressed as the voltage between gate and source when the low operating current value is ID = −1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. VDD = −15 V RG = 10 Ω D.U. < = 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C IN 0 −4 V 10 μs VDD OUT RG RL (c) VOUT ton 90% 10% −4 V 0 V 90% 10% toff tr tf VDS (ON) VDD (b) VIN (a) Test circuit JJ9 1 2 1 2

Ambient temperature Ta (°C) Vth – Ta Gate threshold voltage V th (V) Drain–source voltage V DS (V) ID – VDS Drain current I D (A) Gate–source voltage V GS ( V ) ID = −1 A Common Source Ambient temperature Ta (°C) RDS (ON) – Ta Drain–source on-resistance RDS (ON) ( m Ω) Drain current I D (A) RDS (ON) – ID Drain–source ON-resistance RDS (ON) ( m Ω) Common Source Ta = 25°C Gate–source voltage V GS ( V ) Drain–source ON-resistance RDS (ON) ( m Ω) RDS (ON) – VGS VGS = −3.3 V −3.6 V −10 V −4 V −6 V −0.8 ID – VGS Common Source VDS = −5 V Drain current I D (A) -10 −0.1 −0.001 −0.01 −0.0001 −4.0−0.5 −1.5 −25°C Ta = 100°C 25°C 0 −2 −6 −8 −4 100 200 300 400 25 °C Ta = 100°C −25°C 450 350 250 150 500 −10 400 100 150 250 350 VGS = −4.0 V 0 −2 −4 200 300 450 −10 V 500 Common Source Ta = 25°C 500 −50 ID = –0.5 A / VGS = –4.0 V 0 50 150 100 200 300 400 100 –1.0 A / –10 V Common Source −2.0 −50 0 150 −0.5 −1.0 −1.5 50 100 Common source VDS = −5 V ID = −1 mA

Switching time t (ns) Drain current I D (A) t – ID Drain reverse current I DR (A) Drain–source voltage V DS (V) IDR – VDS Common Source VGS = 0 V Ta = 25°C Drain current I D (A) Forward transfer admittance ⎪Yfs⎪ (S) |Yfs| – ID Drain–source voltage V DS (V) C – VDS Capacitance C (pF) 0.1 −10 −0.1 −1 0.3 −0.01 Common Source VDS = −5 V Ta = 25°C G D S IDR 0.1 0.001 0.01 0.0001 −25°C Ta = 100°C 25°C −0.1 −1 −10 −100 100 1000 300 500 Ciss Coss Crss Common Source Ta = 25°C f = 1 MHz VGS = 0 V 0.01 100 0.1 600 1 10 toff tf 10 ton tr Common Source VDD = −10 V VGS = 0 to −4 V Ta = 25°C RG = 10 Ω Total Gate Charge Qg (nC) Dynamic Input Characteristic Gate–Source voltage V GS ( V ) 0 4 8 6 2 Common Source ID = -2.4 A Ta = 25°C VDD = -15V VDD = -24V

Transient thermal impedance Rth (°C/W) Pulse width t w (s) rth – tw 100 1000 0.001 0.01 0.1 10001 10 100 Single Pulse a: Mounted on FR4 board Cu Pad : 645 mm b: Mounted on FR4 board Cu Pad : 0.8 mm2×3) b a Ambient temperature T a ( ° C ) PD – Ta Drain power dissipation PD (mW) 800 200 120 100 140 400 600 160 1000 80 60 40 20 0 -20 -40 a b a: Mounted on FR4 board Cu Pad : 645 mm2) b: Mounted on FR4 board Cu Pad : 0.8 mm2×3)

RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL

• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
• The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringement s of patents or other rights of the third parties which may result from its use. No license is granted by implic ation or otherwise under any patents or other rights of TOSHIBA or the third parties.
• Please contact your sales representative for product- by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.