SSM3J304T

SSM3J304T_10 TOSHIBA | Alldatasheet

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Technical content

TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J304T ○ Power Management Switch Applications ○ High-Speed Switching Applications

• 1.8-V drive
• Low ON-resistance: RDS(ON) = 297 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 168 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 127 mΩ (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25˚C) Characteristic Symbol Rating Unit Drain-source voltage VDS -20 V Gate-source voltage VGSS ± 8 V DC I D -2.3 Drain current Pulse I DP -4.6 A Power dissipation PD (Note 1) 700 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2) Marking Equivalent Circuit (top view) Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3S1A Weight: 10 mg (typ.) 1 2 1 2 JJ2

Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit V (BR) DSS ID = -1 mA, VGS = 0 -20 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = -1 mA, VGS = +8 V -12 ⎯ ⎯ V Drain cutoff current IDSS V DS = -20 V, VGS = 0 ⎯ ⎯ -10 μA Gate leakage current IGSS V GS = ±8 V, VDS = 0 ⎯ ⎯ ±1 μA Gate threshold voltage Vth V DS = -3 V, ID = -1 mA -0.3 ⎯ -1.0 V Forward transfer admittance ⏐Yfs⏐ V DS = -3 V, ID = -1 A (Note 2) 2.4 4 ⎯ S ID = -1.0 A, VGS = -4 V (Note 2) ⎯ 88 127 ID = -0.5 A, VGS = -2.5 V (Note 2) ⎯ 120 168 Drain-source ON-resistance RDS (ON) ID = -0.2 A, VGS = -1.8 V (Note 2) ⎯ 172 297 mΩ Input capacitance Ciss ⎯ 335 ⎯ Output capacitance Coss ⎯ 70 ⎯ Reverse transfer capacitance Crss VDS = -10 V, VGS = 0, f = 1 MHz ⎯ 56 ⎯ pF Total Gate Charge Qg ⎯ 6.1 ⎯ Gate-Source Charge Qgs ⎯ 4.4 ⎯ Gate-Drain Charge Qgd VDS = -16 V, IDS = - 2.3 A, VGS = - 4 V ⎯ 1.7 ⎯ nC Turn-on time t on ⎯ 20 ⎯ Switching time Turn-off time toff VDD = -10 V, ID = -1A, VGS = 0 to -2.5 V, RG = 4.7 Ω ⎯ 20 ⎯ ns Drain-source forward voltage VDSF I D = 2.3 A, VGS = 0 (Note 2) ⎯ 0.85 1.2 V Note 2: Pulse test Switching Time Test Circuit (a) Test circuit (b) VIN Notice on Usage Vth can be expressed as the voltage between gate and source when the low operating current value is ID = -1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. ) Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. (c) VOUT ton 10% 90%0 V 90% 10% to tr tf VDS (ON) VDD -2.5 V VDD = − 10 V RG = 4.7 Ω Duty ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C IN 0 VDD× OUT RG RL −2.5 V

Drain-Source Voltage VDS (V) Drain Current ID (A) VGS = -1.2 V -1.5 -10 -4 -1.8 -2.5 Common Source Ta = 25 ℃ ID - VGS -0.0001 -0.001 -0.01 -0.1 -10 Gate-Source Voltage VGS (V) Drain Current ID (A) Ta = 85 ℃ -25℃ 25℃ Common Source VDS = -3 V RDS (ON) - VGS 100 200 300 0123456789 1 0 Gate-Source Voltage VGS (V) Drain-Source ON-Resistance RDS (ON) (mΩ) Common Source Ta = 25 ℃ ID = -1 A -0.5 A -0.2 A RDS (ON) - Ta 100 150 200 250 300 -60 -35 -10 15 40 65 90 115 140 Ambient Temperature Ta ( ℃) Drain-Source ON-Resistance RDS (ON) (ｍΩ) VGS = -4 V,ID = -1 A -2.5 V,-0.5 A -1.8 V,-0.2 A Common Source RDS (ON) - ID 100 150 200 250 300 0 - 1- 2- 3- 4- 5 Drain Current ID (A) Drain-Source ON-Resistance RDS (ON) (mΩ) Common Source Ta = 25 ℃VGS = -1.8 V -4 V -2.5 V Vth - Ta -0.2 -0.4 -0.6 -0.8 -1.2 -1.4 -25 0 25 50 75 100 125 150 Ambient Temperature Ta ( ℃) Gate Threshold Voltage Vth (V) Common Source ID = -1 mA VDS = -3 V Common Source Ta=25°C Pulse test Common Source VDS = -3 V Pulse test Common Source Ta=25°C Pulse test Common Source Pulse test Common Source Ta=25°C Pulse test

|Yfs| - ID 0.1 -0.01 -0.1 -1 -10 Drain Current ID (A) Forward Transfer Admittance |Yfs| (S) Ta = 85 ℃ -25℃ 25℃ Common Source VDS = -3 V Ta = 25 ℃ IDR - VDS 0.001 0.01 0.1 Drain-Source Voltage VDS (V) Drain Reverse Current IDR (A) Ta = 85 ℃ 25℃ -25℃ Common Source VGS = 0 Ta = 25 ℃ C - VDS 100 1000 -0.1 -1 -10 -100 Drain-Source Voltage VDS (V) Capacitance C (pF) Ciss Coss Crss Common Source VGS = 0 V f = 1 MHz Ta = 25 ℃ Total Gate Charge Qg (nC) Dynamic Input Characteristic Gate-Source voltage VGS (V) 0 2 4 −10 Common Source ID = −2.3A Ta = 25°C VDD=−16V 8 10 12 14 16 Common Source VDS = -3 V Ta=25°C Pulse test Common Source VGS = 0 Ta=25°C Pulse test t - ID 100 1000 0.01 0.1 1 10 Drain Current ID (A) Switching Time t (ns) Common Source VDD = -10 V VGS = 0 ～ -2.5 V Ta = 25 ℃toff tf ton tr Common Source VDD=-10V VGS=0 to 2.5V Ta=25℃

Transient thermal impedance rth (°C/W) Pulse width t w (s) rth – tw 100 1000 0.001 0.01 0.1 1000 1 10 100 Single Pulse a: Mounted on FR4 board Cu Pad : 645 mm b: Mounted on FR4 board Cu Pad : 0.8 mm2×3) b a Ambient temperature T a ( ° C ) PD – Ta Power dissipation PD (mW) 800 200 120 100 140 400 600 160 1000 80 60 40 20 0 -20 -40 a b a: Mounted on FR4 board Cu Pad : 645 mm2) b: Mounted on FR4 board Cu Pad : 0.8 mm2×3)

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