SSM3J135TU

SSM3J135TU KEXIN | Alldatasheet

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www.kexin.com.cn 1 MOSFETSMD Type 1.Gate 2.Source 3.Drain P-Channel MOSFET SSM3J135TU ■ Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Rating Unit Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current ID (Note 1) -3.0 Pulsed Drain Current IDP (Note 1) -6.0 PD (Note 2) 500 PD (t < 1s) 1000 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 Note 1: The channel temperature should not exceed 150°C during use. Note 2: Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2) Power Dissipation V A mW ■ Features

• VDS (V) = -20 V
• ID = -3.0 A
• 1.5 V drive
• Low ON-resistance: RDS(ON) = 260 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 180 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 132 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 103 mΩ (max) (@VGS = -4.5 V) 1 2

www.kexin.com.cn2 MOSFETSMD Type P-Channel MOSFET SSM3J135TU ■ Marking Marking JJN ■ Electrical Characteristics (Ta = 25℃) Parameter Symbol Test Conditions Min Typ Max Unit VDSS ID=-1mA, VGS=0V -20 VDSX ID=-1mA, VGS=5V (Note 4) -15 Zero Gate Voltage Drain Current IDSS VDS=-20V, VGS=0V -1 Gate-Body Leakage Current IGSS VDS=0V, VGS=±8V ±1 Gate Threshold Voltage VGS(th) VDS=-3V , ID=-1mA -0.3 -1.0 V VGS=-4.5V, ID=-1.0A (Note 3) 103 VGS=-2.5V, ID=-0.6A (Note 3) 132 VGS=-1.8V, ID=-0.4A (Note 3) 180 VGS=-1.5V, ID=-0.2A (Note 3) 260 Forward Transconductance gFS VDS=-3V, ID=-1.0A (Note 3) 2.2 S Input Capacitance Ciss 270 Output Capacitance Coss 40 Reverse Transfer Capacitance Crss 32 Total Gate Charge Qg 4.6 Gate Source Charge Qgs1 0.4 Gate Drain Charge Qgd 0.9 Turn-On DelayTime td(on) 17 Turn-Off DelayTime td(off) 43 Diode Forward Voltage VSD IS=-3.0A,VGS=0V (Note 3) -1.2 V Note 3: Pulse test Note 4: If a forward bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-source breakdown voltage is lowered in this mode. pF nC Drain-Source Breakdown Voltage V μA ns mΩ VDS=-10V, ID=-1.0A VGS=0 to -2.5V, RG=4.7Ω RDS(On) Static Drain-Source On-Resistance VGS=0V, VDS=-10V, f=1MHz VGS=-4.5V, VDS=-10V, ID=-2.0A

www.kexin.com.cn 3 MOSFETSMD Type P-Channel MOSFET SSM3J135TU ■ Typical Characterisitics Ambient temperature Ta (°C) Vth – Ta Gate threshold voltage Vth (V) -1.0 − 0510 05 -0.5 50 100 Drain–source ON-resistance RDS (ON) (mΩ) 0 -2 -4 -6 Gate–source voltage VGS (V) RDS (ON) – VGS 200 -25 °C 25 °C 400 100 Ta = 100 °C RDS (ON) – ID Drain current ID (A) Drain–source ON-resistance RDS (ON) (mΩ) 0 -2.0 -4.0 -6.0 300 100 200 VGS = -4.5 V -1.5 V -2.5 V -1.8V Ambient temperature Ta (°C) RDS (ON) – Ta Drain–source ON-resistance RDS (ON) (mΩ) −50 0 50 150 100 400 100 200 ID = -1.0 A / VGS = -4.5 V -0.2 A / -1.5 V -0.6 A / -2.5 V -0.4 A / -1.8 V Drain–source voltage VDS (V) ID – VDS Drain current ID (A) -0.8 300 400 300 ID – VGS Drain current ID (A) -10 -0.1 -0.001 -0.01 -0.0001 -2.0 -1.0 Common Source VDS = -3 V Pulse test -25 °C Ta = 100 °C 25 °C ID = -1.0A Common Source Pulse test Common Source Ta = 25°C Pulse test Common Source Pulse test Common Source VDS = -3 V ID = -1 mA I VGS = -1.5 V -1.8 V -2.5 V -4.5 V Common Source Ta = 25 °C Pulse test Gate–source voltage VGS (V)

www.kexin.com.cn4 MOSFETSMD Type P-Channel MOSFET SSM3J135TU Drain current ID (A) Forward transfer admittance Yfs (S) |Yfs| – ID 0.1 -10 -0.1 -1 0.3 -0.01 Common Source VDS = -3 V Ta = 25°C Pulse test Drain current ID (A) Switching time t (ns) t – ID -0.001 1000 -0.1 10000 -1 -10 100 tf Common Source VDD = -10 V VGS = 0 to -2.5 V Ta = 25 °C RG = 4.7Ω -0.01 toff tr ton Total Gate Charge Qg (nC) Dynamic Input Characteristic Gate–source voltage VGS (V) 0 8 4 2 6 VDD = - 16 V VDD = - 10 V Common Source ID = -2.0 A Ta = 25°C Drain reverse current IDR (A) Drain–source voltage VDS (V) IDR – VDS 0.1 0.001 0.01 0.5 1.0 1.5 Common Source VGS = 0 V Pulse test G D S IDR -25 °C Ta =100 °C 25 °C Drain-source voltage VDS (V) C – VDS Capacitance C (pF) -0.1 -1 -10 -100 100 1000 300 Common Source Ta = 25 °C f = 1 MHz VGS = 0 V Ciss Coss Crss

www.kexin.com.cn 5 MOSFETSMD Type P-Channel MOSFET SSM3J135TU Ambient temperature Ta (°C) PD – Ta Power dissipation PD (mW) 800 200 120 100 140 400 600 160 1000 04- 02- 0 02 04 06 08 Mounted on FR4 board (25.4mm × 25.4mm × 1.6mm , Cu Pad : 645 mm2) Transient thermal impedance Rth (°C/W) Pulse Width tw (s) Rth – tw 0.001 0.01 0.1 6001 10 100 100 600 b a Single pulse a: Mounted on FR4 board (25.4mm × 25.4mm × 1.6mm , Cu Pad : 645 mm2) b: Mounted on FR4 Board (25.4mm × 25.4mm × 1.6mm , Cu Pad : 0.36 mm2×3)